NL7612301A - Geheugenstelsel. - Google Patents
Geheugenstelsel.Info
- Publication number
- NL7612301A NL7612301A NL7612301A NL7612301A NL7612301A NL 7612301 A NL7612301 A NL 7612301A NL 7612301 A NL7612301 A NL 7612301A NL 7612301 A NL7612301 A NL 7612301A NL 7612301 A NL7612301 A NL 7612301A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory system
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50133078A JPS5811103B2 (ja) | 1975-11-07 | 1975-11-07 | ハンドウタイメモリ |
JP51006669A JPS5818714B2 (ja) | 1976-01-26 | 1976-01-26 | メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7612301A true NL7612301A (nl) | 1977-05-10 |
Family
ID=26340855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7612301A NL7612301A (nl) | 1975-11-07 | 1976-11-05 | Geheugenstelsel. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4086662A (nl) |
DE (1) | DE2650574B2 (nl) |
GB (1) | GB1535250A (nl) |
NL (1) | NL7612301A (nl) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041463B2 (ja) * | 1976-11-19 | 1985-09-17 | 株式会社日立製作所 | ダイナミツク記憶装置 |
DE2740113A1 (de) * | 1977-09-06 | 1979-03-15 | Siemens Ag | Monolithisch integrierter halbleiterspeicher |
US4198694A (en) * | 1978-03-27 | 1980-04-15 | Hewlett-Packard Company | X-Y Addressable memory |
JPS6044752B2 (ja) * | 1978-04-24 | 1985-10-05 | 日本電気株式会社 | ダイナミツクメモリ |
DE2842547A1 (de) * | 1978-09-29 | 1980-04-10 | Siemens Ag | Schaltungsanordnung zum lesen und regenerieren von in ein-transistor-speicherelementen gespeicherten informationen |
JPS5817998B2 (ja) * | 1978-10-26 | 1983-04-11 | 富士通株式会社 | 半導体メモリ |
JPS5634179A (en) * | 1979-08-24 | 1981-04-06 | Mitsubishi Electric Corp | Control circuit for memory unit |
US4247917A (en) * | 1979-08-27 | 1981-01-27 | Intel Corporation | MOS Random-access memory |
JPS58128097A (ja) * | 1981-12-29 | 1983-07-30 | Fujitsu Ltd | 半導体記憶装置 |
JPS5960793A (ja) * | 1982-09-30 | 1984-04-06 | Fujitsu Ltd | 半導体メモリ |
US4574365A (en) * | 1983-04-18 | 1986-03-04 | International Business Machines Corporation | Shared access lines memory cells |
US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
US4704705A (en) * | 1985-07-19 | 1987-11-03 | Texas Instruments Incorporated | Two transistor DRAM cell and array |
JPH02161686A (ja) * | 1988-12-13 | 1990-06-21 | Oki Electric Ind Co Ltd | Mos型半導体記憶装置 |
US5881010A (en) * | 1997-05-15 | 1999-03-09 | Stmicroelectronics, Inc. | Multiple transistor dynamic random access memory array architecture with simultaneous refresh of multiple memory cells during a read operation |
US6504550B1 (en) | 1998-05-21 | 2003-01-07 | Mitsubishi Electric & Electronics Usa, Inc. | System for graphics processing employing semiconductor device |
US6661421B1 (en) | 1998-05-21 | 2003-12-09 | Mitsubishi Electric & Electronics Usa, Inc. | Methods for operation of semiconductor memory |
US6535218B1 (en) | 1998-05-21 | 2003-03-18 | Mitsubishi Electric & Electronics Usa, Inc. | Frame buffer memory for graphic processing |
US6559851B1 (en) | 1998-05-21 | 2003-05-06 | Mitsubishi Electric & Electronics Usa, Inc. | Methods for semiconductor systems for graphics processing |
JP2006059481A (ja) * | 2004-08-23 | 2006-03-02 | Renesas Technology Corp | 半導体記憶装置 |
US11276448B2 (en) * | 2020-03-26 | 2022-03-15 | Micron Technology, Inc. | Memory array with multiplexed select lines and two transistor memory cells |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3142822A (en) * | 1961-06-29 | 1964-07-28 | Goodyear Aerospace Corp | Apparatus for sampling, storing and summing signals |
US3810124A (en) * | 1972-06-30 | 1974-05-07 | Ibm | Memory accessing system |
US3771147A (en) * | 1972-12-04 | 1973-11-06 | Bell Telephone Labor Inc | Igfet memory system |
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
US3986180A (en) * | 1975-09-22 | 1976-10-12 | International Business Machines Corporation | Depletion mode field effect transistor memory system |
-
1976
- 1976-08-11 US US05/713,580 patent/US4086662A/en not_active Expired - Lifetime
- 1976-10-28 GB GB44896/76A patent/GB1535250A/en not_active Expired
- 1976-11-04 DE DE2650574A patent/DE2650574B2/de not_active Withdrawn
- 1976-11-05 NL NL7612301A patent/NL7612301A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US4086662A (en) | 1978-04-25 |
DE2650574A1 (de) | 1977-05-12 |
GB1535250A (en) | 1978-12-13 |
DE2650574B2 (de) | 1978-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |