NL7605855A - Fotodetektor met een heterojunctie p-n diode. - Google Patents

Fotodetektor met een heterojunctie p-n diode.

Info

Publication number
NL7605855A
NL7605855A NL7605855A NL7605855A NL7605855A NL 7605855 A NL7605855 A NL 7605855A NL 7605855 A NL7605855 A NL 7605855A NL 7605855 A NL7605855 A NL 7605855A NL 7605855 A NL7605855 A NL 7605855A
Authority
NL
Netherlands
Prior art keywords
diode
hot
photo detector
photo
detector
Prior art date
Application number
NL7605855A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7605855A publication Critical patent/NL7605855A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/005—Antimonides of gallium or indium

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
NL7605855A 1975-06-05 1976-05-31 Fotodetektor met een heterojunctie p-n diode. NL7605855A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/583,964 US3995303A (en) 1975-06-05 1975-06-05 Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector

Publications (1)

Publication Number Publication Date
NL7605855A true NL7605855A (nl) 1976-12-07

Family

ID=24335344

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7605855A NL7605855A (nl) 1975-06-05 1976-05-31 Fotodetektor met een heterojunctie p-n diode.

Country Status (6)

Country Link
US (1) US3995303A (de)
JP (1) JPS51148392A (de)
CA (1) CA1059230A (de)
DE (1) DE2624348A1 (de)
GB (1) GB1531633A (de)
NL (1) NL7605855A (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053920A (en) * 1975-11-10 1977-10-11 The United States Of America As Represented By The Secretary Of The Army Step graded photocathode
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4207122A (en) * 1978-01-11 1980-06-10 International Standard Electric Corporation Infra-red light emissive devices
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
US4158577A (en) * 1978-07-05 1979-06-19 Milnes Arthur G High output solar cells
FR2435816A1 (fr) * 1978-09-08 1980-04-04 Radiotechnique Compelec Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede
JPS5580375A (en) * 1978-12-13 1980-06-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor photoreceptor
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction
JPS5696834A (en) * 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
JPS577978A (en) * 1980-06-18 1982-01-16 Nippon Telegr & Teleph Corp <Ntt> Opto-electronic switch
JPS56167373A (en) * 1980-05-27 1981-12-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light sensor
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
JPS5736878A (en) * 1980-08-18 1982-02-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor photodetector
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector
US4390889A (en) * 1980-10-09 1983-06-28 Bell Telephone Laboratories, Incorporated Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4473835A (en) * 1981-06-19 1984-09-25 At&T Bell Laboratories Long wavelength avalanche photodetector
US4518979A (en) * 1982-06-30 1985-05-21 International Business Machines Corporation Semiconductor transistor with graded base and collector
US4518255A (en) * 1982-08-20 1985-05-21 Mcdonnell Douglas Corporation Temperature tracking range finder
US4568959A (en) * 1983-06-02 1986-02-04 International Business Machines Corporation Photomultiplier
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US5221367A (en) * 1988-08-03 1993-06-22 International Business Machines, Corp. Strained defect-free epitaxial mismatched heterostructures and method of fabrication
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5084409A (en) * 1990-06-26 1992-01-28 Texas Instruments Incorporated Method for patterned heteroepitaxial growth
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
JP2001358359A (ja) * 2000-06-16 2001-12-26 Nippon Sheet Glass Co Ltd 半導体受光素子
US20040086221A1 (en) * 2002-11-06 2004-05-06 Wei Qiu Low cost, hybrid integrated dense wavelength division multiplexer/demultiplexer for fiber optical networks
US7755023B1 (en) * 2007-10-09 2010-07-13 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
JP6943078B2 (ja) * 2017-08-23 2021-09-29 富士通株式会社 赤外線検出器及びその製造方法、撮像素子、撮像システム
DE102019003069B4 (de) 2019-04-30 2023-06-01 Azur Space Solar Power Gmbh Stapelförmige hochsperrende lll-V-Halbleiterleistungsdioden
CN113284973B (zh) * 2021-05-14 2022-07-05 长春理工大学 一种高响应度的雪崩光电二极管结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675026A (en) * 1969-06-30 1972-07-04 Ibm Converter of electromagnetic radiation to electrical power
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US3814993A (en) * 1972-11-15 1974-06-04 Us Navy Tuneable infrared photocathode
GB1418002A (en) * 1972-11-24 1975-12-17 Mullard Ltd Photocathode manufacture
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response

Also Published As

Publication number Publication date
JPS51148392A (en) 1976-12-20
CA1059230A (en) 1979-07-24
DE2624348A1 (de) 1976-12-16
US3995303A (en) 1976-11-30
GB1531633A (en) 1978-11-08

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
A85 Still pending on 85-01-01
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed