CN113284973B - 一种高响应度的雪崩光电二极管结构 - Google Patents
一种高响应度的雪崩光电二极管结构 Download PDFInfo
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Abstract
一种高响应度的雪崩光电二极管结构涉及雪崩二极管技术领域，解决了低噪声和高倍增增益难以同时实现的问题，二极管结构为纳米线型，包括从下至上顺次设置的GaAs倍增层、窄带隙***层和吸收层；***层的材料为GaAs1‑xSbx，吸收层的材料为GaAs1‑ySby；或者；***层的材料为IniGa1‑iAs，吸收层的材料为InjGa1‑jAs；i和x为固定值，吸收层的In或Sb组分由下至上线性递增。且x＞ymin,i＞jmin。本发明通过窄带隙***层在价带形成空穴阱，捕获空穴，并在***层和倍增层之间形成强空穴势垒以阻挡空穴，增强了雪崩区的电场强度，提高了倍增因子，降低了噪声。
Description
技术领域
本发明涉及雪崩光电二极管技术领域，具体涉及一种高响应度的雪崩光电二极管结构。
背景技术
雪崩光电二极管(APD)由于其由于光生载流子的倍增而具有极高的增益，被认为是高性能光电探测器代表，其依靠光生载流子的雪崩倍增作用，使光生载流子按指数倍增。此外，纳米线雪崩光电二极管可以突破光子探测效率极限，也有助于降低阈值电压。到目前为止，虽然纳米线雪崩光电二极管的研究已经取得了重要的进展，但其性能仍然不能满足商业应用的要求。
一般来讲，为了获得高倍增增益，必须同时满足两个条件：充足的光生载流子和强大的电场，通过设计分离吸收倍增结构最大化光子吸收区域和最小化倍增区域可以同时实现这两个条件。但是，强的电场也将带来高的噪声电流，雪崩光电二极管低的噪声和高的倍增增益特性难以同时实现是目前面临的难题。
发明内容
为了解决上述问题，本发明提供一种高响应度的雪崩光电二极管结构。
本发明为解决技术问题所采用的技术方案如下：
一种高响应度的雪崩光电二极管结构，其特征在于，所述雪崩光电二极管结构为纳米线型，包括从下至上顺次设置的GaAs倍增层、窄带隙***层和吸收层；
所述窄带隙***层的材料为GaAs1-xSbx，吸收层的材料为GaAs1-ySby，x为固定值且0＜x＜1，0＜y＜1，吸收层的Sb组分由下至上线性递增，窄带隙***层的Sb组分大于吸收层Sb组分的最小值；
或者；
所述窄带隙***层的材料为IniGa1-iAs，吸收层的材料为InjGa1-jAs，i为固定值且0＜i＜1，0＜j＜1，吸收层的In组分由下至上线性递增，窄带隙***层的In组分大于吸收层In组分的最小值。
一种高响应度的雪崩光电二极管结构的制备方法，所述窄带隙***层的材料为GaAs1-xSbx，吸收层的材料为GaAs1-ySby，所述制备方法包括如下步骤：在衬底上生长所述GaAs倍增层，在GaAs倍增层的生长过程中，温度保持在620℃，V/III束流比为25；在GaAs倍增层上生长窄带隙***层，在窄带隙***层的生长过程中Sb/Ga束流比为5；在窄带隙***层上生长吸收层，生长吸收层时，Sb/Ga束流比从0到5线性增加，吸收层生长结束后保持Sb束流源开启直至降温完成。
本发明的有益效果是：
本发明一种高响应度的雪崩光电二极管结构通过结构设计在保障高倍增因子的同时降低噪声，将禁带宽度较小的窄带隙***层***GaAs倍增层和吸收层之间，在价带形成空穴阱，捕获空穴，并在窄带隙***层和GaAs倍增层之间形成强空穴势垒以阻挡空穴，从而增强了雪崩区的电场强度，倍增因子得到提高，同时由于窄带隙***层的空穴捕获效应，可以降低雪崩光电二极管的暗电流，降低其噪声。本发明还提供了的上述一种高响应度的雪崩光电二极管结构的简单的、制备效果好的制备方法。
附图说明
图1为本发明的一种高响应度的雪崩光电二极管结构的能带结构图。
图2为本发明的一种高响应度的雪崩光电二极管结构的结构图。
图3为本发明的一种高响应度的雪崩光电二极管结构的IV曲线图。
图4为本发明的一种高响应度的雪崩光电二极管结构的能带结构图。
图5为本发明的一种高响应度的雪崩光电二极管结构的部分电场强度分布图。
图6为本发明的一种高响应度的雪崩光电二极管结构在10V偏压下的噪声电流谱。
具体实施方式
下面结合附图和实施例对本发明做进一步详细说明。
一种高响应度的雪崩光电二极管结构，雪崩光电二极管结构为纳米线型，如图1，图1中纳米线型从左至右设置，其中EC表示导带能级，EV表示价带能级，下面具体实施方式中按照从下至上的方式描述，雪崩光电二极管结构包括GaAs倍增层、设置在GaAs倍增层上的窄带隙***层和设置在窄带隙***层上的吸收层，即窄带隙***层***在GaAs倍增层和吸收层间。窄带隙***层的材料为GaAs1-xSbx，称为GaAs1-xSbx***层，吸收层的材料为GaAs1- ySby，称为GaAs1-ySby吸收层；或者，窄带隙***层的材料为IniGa1-iAs，称为IniGa1-iAs***层，吸收层的材料为InjGa1-jAs，称为InjGa1-jAs吸收层。若窄带隙***层的材料为GaAs1- xSbx，吸收层的材料为GaAs1-ySby，则x为固定值，0＜x＜1，0＜y＜1，GaAs1-ySby吸收层的Sb组分由下至上线性递增，GaAs1-xSbx***层的Sb组分大于GaAs1-ySby吸收层Sb组分的最小值。GaAs1-ySby吸收层包括至少2层Sb组分由下至上逐渐增加的GaAsSb子吸收层，由下至上设置的GaAsSb子吸收层的Sb组分逐渐增加且线性递增，任意两个GaAsSb子吸收层的Sb组分不同，且位于上侧的GaAsSb子吸收层的Sb组分大于位于下侧的GaAsSb子吸收层的Sb组分，也就是GaAs1-ySby吸收层包括若干自下至上Sb组分逐渐增加的组分渐增层(GaAsSb子吸收层)。GaAs1-xSbx***层的Sb组分大于位于GaAs1-ySby吸收层最下侧的GaAsSb子吸收层的Sb组分，即GaAs1-xSbx***层的Sb组分大于与其相邻的GaAsSb子吸收层的Sb组分。若窄带隙***层的材料为IniGa1-iAs，吸收层的材料为InjGa1-jAs，则i为固定值，0＜i＜1，0＜j＜1，InjGa1-jAs吸收层的In组分由下至上线性递增，IniGa1-iAs***层的In组分大于InjGa1-jAs吸收层In组分的最小值。InjGa1-jAs吸收层包括至少2层In组分由下至上逐渐增加的InGaAs子吸收层，由下至上设置的InGaAs子吸收层的In组分逐渐增加且线性递增，任意两个InGaAs子吸收层的In组分不同，且位于上侧的InGaAs子吸收层的In组分大于位于下侧的InGaAs子吸收层的In组分，也就是InjGa1-jAs吸收层包括若干自下至上In组分逐渐增加的组分渐增层(InGaAs子吸收层)。IniGa1-iAs***层的In组分大于位于InjGa1-jAs吸收层最下侧的InGaAs子吸收层的In组分，即IniGa1-iAs***层的In组分大于与其相邻的InGaAs子吸收层的In组分。
下面以具有GaAs1-xSbx***层和GaAs1-ySby吸收层的雪崩光电二极管进行详述，下述制备方法、雪崩光电二极管的特征等均适用于具有IniGa1-iAs***层和InjGa1-jAs吸收层的雪崩光电二极管。
一种高响应度的雪崩光电二极管结构的制备方法，具体为：取Si衬底，将Si衬底在HF溶液中腐蚀以部分除去SiO2，随后用乙醇超声清洗5min。将处理后的衬底转移到MBE(分子束外延)腔室进行预处理后开始生长。在衬底上生长GaAs倍增层，GaAs倍增层的生长时间为10min，在GaAs倍增层的生长过程中，温度保持在620℃，V/III束流比为25。在GaAs倍增层上生长GaAs1-xSbx***层，生长时间为1min，使Sb/Ga束流比保持为5。生长GaAs1-ySby吸收层的生长时间为10min，生长GaAs1-ySby吸收层时，Sb/Ga束流比从0到5线性增加，在生长结束后的降温过程中保持Sb束流源开启，起到保护作用，直至完成降温生长停止。整根纳米线的高度(即图1中的长度)约为1000nm左右，第一段高为620nm，第二段高为80nm，第三段高为300nm。
将生长好的纳米线制备电极。将生长好的纳米线采用机械剥离的方式从Si衬底上剥离，然后转移到的表面带有100nm厚SiO2的p+-Si衬底上。采用电子束光刻技术制备正负电极，正电极连接GaAs倍增层，负电极连接GaAs1-ySby吸收层，得到的一种高响应度的雪崩光电二极管结构的结构图如图2，其暗场下的I-V曲线如图3所示，可知当加反向电压时，电流很小且几乎不变，直到达到一定值之后，电流突然急剧增加，发生雪崩击穿，根据图3的曲线可知本发明的器件是雪崩二极管。
由于GaAs1-ySby吸收层从下至上(即图1中从左至右)的Sb组分逐渐增加时，GaAs1- ySby吸收层从下至上的禁带宽度逐渐减小。纳米线第二段GaAs1-xSbx***层的Sb组分高于第三段的Sb组分，实质上是在纳米线第一段GaAs倍增层和第三段GaAs1-ySby吸收层之间***一段禁带宽度比较小的GaAs1-xSbx***层，形成图1的能带结构。本实施方式中具有高Sb组分GaAsSb***层和梯度组分GaAsSb吸收层的雪崩二极管在51.3mW/cm2光功率密度下在18V反向偏压时的响应度可以达到103A/W量级，最大的倍增因子可以达到104。
图4为雪崩光电二极管能带结构(GaAsSb体系或InGaAs体系的能带结构均如图4所示意的)，横坐标的位置对应纳米线的高度/长度，图4上侧部分是没有施加电压即0V时的能带结构，图4下侧部分是施加反向18V电压时的能带结构，从两个能带结构可以看到在GaAs1-xSbx***层中形成了空穴势阱，同时在GaAs1-xSbx***层和GaAs倍增层界面处形成了空穴势垒，空穴势垒阻挡了空穴从***层向倍增层运动，从而提高了倍增层的电场强度，从而得到高响应度的雪崩光电二极管，也就是GaAs1-xSbx***层可以提高倍增因子和响应度。图5为雪崩光电二极管结构的部分电场强度分布图，为倍增层、***层和吸收层交界部分的电场强度分布图，由图5可知倍增层得到了高的电场强度。基于上述图4和图5，表明GaAs1- xSbx***层改变了APD的能带结构并增加了倍增区的电场强度，这是因为GaAs1-xSbx***层可用作空穴阱以捕获空穴，并在***层和倍增区之间形成强势垒以阻挡空穴，从而增强了雪崩区的电场强度。因此，通过设置GaAs1-xSbx***层，器件的倍增因子和响应度都得到了改善。
表征本发明雪崩二极管的噪声特性，测试了-10V偏压下的噪声电流谱，如图6所示。该曲线斜率为1/f，f表示频率，表明本发明的一种高响应度的雪崩光电二极管结构噪声由1/f噪声主导，电压10V时噪声电流密度达到1023A2/Hz，具有低的噪声电流。通过在GaAs倍增层和GaAs1-ySby吸收层之间***GaAs1-xSbx***层，提高GaAs倍增层雪崩区电场强度，提高雪崩二极管的响应度，同时降低噪声，获得了高响应度、低噪声的GaAsSb纳米线雪崩探测器。
本发明一种高响应度的雪崩光电二极管结构通过结构设计在保障高倍增因子的同时降低噪声，将禁带宽度较小的窄带隙***层***GaAs倍增层和吸收层之间，在价带形成空穴阱，捕获空穴，并在窄带隙***层和GaAs倍增层之间形成强空穴势垒以阻挡空穴，从而增强了雪崩区的电场强度。因此，本发明设计了一种带有特殊能带结构的纳米线雪崩探测器，倍增因子得到提高，同时由于窄带隙***层的空穴捕获效应，可以降低雪崩光电二极管的暗电流，降低其噪声。本发明的一种高响应度的雪崩光电二极管结构的制备方法具有操作简单、制备效果好的优点。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (6)
1.一种高响应度的雪崩光电二极管结构，其特征在于，所述雪崩光电二极管结构为纳米线型，包括从下至上顺次设置的GaAs倍增层、窄带隙***层和吸收层；
所述窄带隙***层的材料为GaAs1-xSbx，吸收层的材料为GaAs1-ySby，x为固定值且0＜x＜1，0＜y＜1，吸收层的Sb组分由下至上线性递增，窄带隙***层的Sb组分大于吸收层Sb组分的最小值；
或者；
所述窄带隙***层的材料为IniGa1-iAs，吸收层的材料为InjGa1-jAs，i为固定值且0＜i＜1，0＜j＜1，吸收层的In组分由下至上线性递增，窄带隙***层的In组分大于吸收层In组分的最小值。
2.如权利要求1所述的一种高响应度的雪崩光电二极管结构，其特征在于，所述雪崩光电二极管结构还包括连接GaAs倍增层的正电极和连接吸收层的负电极。
3.如权利要求1所述的一种高响应度的雪崩光电二极管结构，其特征在于，所述***层的高度为80nm，吸收层的高度为300nm。
4.如权利要求1所述的一种高响应度的雪崩二极管结构，其特征在于，在所述***层中形成了空穴势阱，在***层与GaAs倍增层界面处形成了空穴势垒。
5.如权利要求1至4中任意一项所述的一种高响应度的雪崩光电二极管结构的制备方法，其特征在于，所述窄带隙***层的材料为GaAs1-xSbx，吸收层的材料为GaAs1-ySby，所述制备方法包括如下步骤：在衬底上生长所述GaAs倍增层，在GaAs倍增层的生长过程中，温度保持在620℃，V/III束流比为25；在GaAs倍增层上生长窄带隙***层，在窄带隙***层的生长过程中Sb/Ga束流比为5；在窄带隙***层上生长吸收层，生长吸收层时，Sb/Ga束流比从0到5线性增加，吸收层生长结束后保持Sb束流源开启直至降温完成。
6.如权利要求5所述的一种高响应度的雪崩光电二极管结构的制备方法，其特征在于，所述GaAs倍增层的生长时间为10min，***层的生长时间为1min，吸收层的生长时间为10min。
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