NL6702137A - - Google Patents
Info
- Publication number
- NL6702137A NL6702137A NL6702137A NL6702137A NL6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A
- Authority
- NL
- Netherlands
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/106—Continuous processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52928866A | 1966-02-23 | 1966-02-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6702137A true NL6702137A (de) | 1967-08-24 |
Family
ID=24109272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6702137A NL6702137A (de) | 1966-02-23 | 1967-02-13 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3473510A (de) |
DE (1) | DE1619950A1 (de) |
FR (1) | FR1511289A (de) |
GB (1) | GB1156615A (de) |
NL (1) | NL6702137A (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3598082A (en) * | 1969-08-14 | 1971-08-10 | Texas Instruments Inc | Continuous epitaxial deposition system |
US3645545A (en) * | 1970-07-30 | 1972-02-29 | Ibm | Entrance-exit atmospheric isolation device |
US3659551A (en) * | 1970-08-10 | 1972-05-02 | Anchor Hocking Corp | Glass treating tunnel |
US3658032A (en) * | 1970-11-05 | 1972-04-25 | Fairchild Camera Instr Co | Reactor for the formation of material on a substrate |
US3710757A (en) * | 1970-12-09 | 1973-01-16 | Texas Instruments Inc | Continuous deposition system |
US3703881A (en) * | 1971-05-13 | 1972-11-28 | Us Air Force | Apparatus for ultra-high vacuum in situ thin film studies |
US3805736A (en) * | 1971-12-27 | 1974-04-23 | Ibm | Apparatus for diffusion limited mass transport |
US3780696A (en) * | 1972-07-11 | 1973-12-25 | Us Army | Substrate holder for arc plasma deposition |
US4075972A (en) * | 1975-08-20 | 1978-02-28 | Nippondenso Co., Ltd. | Apparatus for thermal diffusion of semiconductor devices |
US4048955A (en) * | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
JPS5936417B2 (ja) * | 1975-11-26 | 1984-09-04 | 株式会社デンソー | 半導体基板への高周波誘導加熱による拡散装置 |
US4116733A (en) * | 1977-10-06 | 1978-09-26 | Rca Corporation | Vapor phase growth technique of III-V compounds utilizing a preheating step |
FR2427141B1 (de) * | 1978-05-31 | 1980-10-10 | Saint Gobain | |
US4218214A (en) * | 1979-02-05 | 1980-08-19 | Rca Corporation | Guide wing for a furnace paddle |
US4389562A (en) * | 1981-08-05 | 1983-06-21 | Hatco Corporation | Conveyor oven |
US4477718A (en) * | 1983-01-10 | 1984-10-16 | Radiant Technology Corporation | Infrared furnace with controlled environment |
GB8421162D0 (en) * | 1984-08-21 | 1984-09-26 | British Telecomm | Growth of semi-conductors |
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1465071A (en) * | 1919-07-24 | 1923-08-14 | David S Baker | Drying apparatus |
US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
GB1011274A (en) * | 1963-06-08 | 1965-11-24 | Westland Aircraft Ltd | Means and method for preparing gas-treated objects |
US3279964A (en) * | 1965-06-03 | 1966-10-18 | Btu Eng Corp | Method for continuous gas diffusion |
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1966
- 1966-02-23 US US529288A patent/US3473510A/en not_active Expired - Lifetime
-
1967
- 1967-02-13 NL NL6702137A patent/NL6702137A/xx unknown
- 1967-02-13 FR FR94660A patent/FR1511289A/fr not_active Expired
- 1967-02-16 GB GB7492/67A patent/GB1156615A/en not_active Expired
- 1967-02-17 DE DE19671619950 patent/DE1619950A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1156615A (en) | 1969-07-02 |
DE1619950A1 (de) | 1971-02-18 |
FR1511289A (fr) | 1968-01-26 |
US3473510A (en) | 1969-10-21 |