NL6702137A - - Google Patents

Info

Publication number
NL6702137A
NL6702137A NL6702137A NL6702137A NL6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A NL 6702137 A NL6702137 A NL 6702137A
Authority
NL
Netherlands
Application number
NL6702137A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6702137A publication Critical patent/NL6702137A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • C30B31/106Continuous processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/90Semiconductor vapor doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/006Apparatus
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/907Continuous processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL6702137A 1966-02-23 1967-02-13 NL6702137A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52928866A 1966-02-23 1966-02-23

Publications (1)

Publication Number Publication Date
NL6702137A true NL6702137A (de) 1967-08-24

Family

ID=24109272

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6702137A NL6702137A (de) 1966-02-23 1967-02-13

Country Status (5)

Country Link
US (1) US3473510A (de)
DE (1) DE1619950A1 (de)
FR (1) FR1511289A (de)
GB (1) GB1156615A (de)
NL (1) NL6702137A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system
US3645545A (en) * 1970-07-30 1972-02-29 Ibm Entrance-exit atmospheric isolation device
US3659551A (en) * 1970-08-10 1972-05-02 Anchor Hocking Corp Glass treating tunnel
US3658032A (en) * 1970-11-05 1972-04-25 Fairchild Camera Instr Co Reactor for the formation of material on a substrate
US3710757A (en) * 1970-12-09 1973-01-16 Texas Instruments Inc Continuous deposition system
US3703881A (en) * 1971-05-13 1972-11-28 Us Air Force Apparatus for ultra-high vacuum in situ thin film studies
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
US3780696A (en) * 1972-07-11 1973-12-25 Us Army Substrate holder for arc plasma deposition
US4075972A (en) * 1975-08-20 1978-02-28 Nippondenso Co., Ltd. Apparatus for thermal diffusion of semiconductor devices
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
JPS5936417B2 (ja) * 1975-11-26 1984-09-04 株式会社デンソー 半導体基板への高周波誘導加熱による拡散装置
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
FR2427141B1 (de) * 1978-05-31 1980-10-10 Saint Gobain
US4218214A (en) * 1979-02-05 1980-08-19 Rca Corporation Guide wing for a furnace paddle
US4389562A (en) * 1981-08-05 1983-06-21 Hatco Corporation Conveyor oven
US4477718A (en) * 1983-01-10 1984-10-16 Radiant Technology Corporation Infrared furnace with controlled environment
GB8421162D0 (en) * 1984-08-21 1984-09-26 British Telecomm Growth of semi-conductors
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1465071A (en) * 1919-07-24 1923-08-14 David S Baker Drying apparatus
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
GB1011274A (en) * 1963-06-08 1965-11-24 Westland Aircraft Ltd Means and method for preparing gas-treated objects
US3279964A (en) * 1965-06-03 1966-10-18 Btu Eng Corp Method for continuous gas diffusion

Also Published As

Publication number Publication date
GB1156615A (en) 1969-07-02
DE1619950A1 (de) 1971-02-18
FR1511289A (fr) 1968-01-26
US3473510A (en) 1969-10-21

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