GB1156615A - Method and Apparatus for the Continuous Doping of Semiconductor Materials - Google Patents

Method and Apparatus for the Continuous Doping of Semiconductor Materials

Info

Publication number
GB1156615A
GB1156615A GB7492/67A GB749267A GB1156615A GB 1156615 A GB1156615 A GB 1156615A GB 7492/67 A GB7492/67 A GB 7492/67A GB 749267 A GB749267 A GB 749267A GB 1156615 A GB1156615 A GB 1156615A
Authority
GB
United Kingdom
Prior art keywords
receptacles
core
contents
liner
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7492/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Glass Works
Original Assignee
Corning Glass Works
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Glass Works filed Critical Corning Glass Works
Publication of GB1156615A publication Critical patent/GB1156615A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/106—Continuous processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,156,615. Doping semi-conductor material. CORNING GLASS WORKS. 16 Feb., 1967 [23 Feb., 1966], No. 7492/67. Heading H1K. A plurality of receptacles 50 for semiconductor material are passed in sequence through an elongate heating zone such as the tubular furnace core 13, the arrangement being such that the content of each receptacle is isolated from the contents of the neighbouring receptacles. As shown this is achieved by fitting a D-shaped bottom liner 15 in the furnace core and making the receptacles consist of a tray protion 51, Fig. 4, and a barrier wall portion 52 which fits the space between the liner 15 and the core 13. Alternatively, the liner 15 may be omitted and the receptacles consist of a D-shaped base with a circular barrier wall at one end (Fig. 5, not shown). The apparatus is used to dope the contents of the receptacles, a series of heaters surrounding the core ensuring that the temperature in it increases from each end toward the centre, so that the contents of the receptacles are gradually heated and then gradually cooled as they pass through. Conduits 30 to 34 supply a suitable atmosphere to the various regions of the heating zone. The atmosphere is inert as supplied by conduits 30, 31, 33, 34 to the input and output ends of the path of motion of the receptacles through the furnace and is a doping atmosphere (containing e.g. POCl 3 ) at the maximum temperature region fed by conduit 32.
GB7492/67A 1966-02-23 1967-02-16 Method and Apparatus for the Continuous Doping of Semiconductor Materials Expired GB1156615A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52928866A 1966-02-23 1966-02-23

Publications (1)

Publication Number Publication Date
GB1156615A true GB1156615A (en) 1969-07-02

Family

ID=24109272

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7492/67A Expired GB1156615A (en) 1966-02-23 1967-02-16 Method and Apparatus for the Continuous Doping of Semiconductor Materials

Country Status (5)

Country Link
US (1) US3473510A (en)
DE (1) DE1619950A1 (en)
FR (1) FR1511289A (en)
GB (1) GB1156615A (en)
NL (1) NL6702137A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system
US3645545A (en) * 1970-07-30 1972-02-29 Ibm Entrance-exit atmospheric isolation device
US3659551A (en) * 1970-08-10 1972-05-02 Anchor Hocking Corp Glass treating tunnel
US3658032A (en) * 1970-11-05 1972-04-25 Fairchild Camera Instr Co Reactor for the formation of material on a substrate
US3710757A (en) * 1970-12-09 1973-01-16 Texas Instruments Inc Continuous deposition system
US3703881A (en) * 1971-05-13 1972-11-28 Us Air Force Apparatus for ultra-high vacuum in situ thin film studies
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
US3780696A (en) * 1972-07-11 1973-12-25 Us Army Substrate holder for arc plasma deposition
US4075972A (en) * 1975-08-20 1978-02-28 Nippondenso Co., Ltd. Apparatus for thermal diffusion of semiconductor devices
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
JPS5936417B2 (en) * 1975-11-26 1984-09-04 株式会社デンソー Diffusion device using high-frequency induction heating for semiconductor substrates
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
FR2427141B1 (en) * 1978-05-31 1980-10-10 Saint Gobain
US4218214A (en) * 1979-02-05 1980-08-19 Rca Corporation Guide wing for a furnace paddle
US4389562A (en) * 1981-08-05 1983-06-21 Hatco Corporation Conveyor oven
US4477718A (en) * 1983-01-10 1984-10-16 Radiant Technology Corporation Infrared furnace with controlled environment
GB8421162D0 (en) * 1984-08-21 1984-09-26 British Telecomm Growth of semi-conductors
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1465071A (en) * 1919-07-24 1923-08-14 David S Baker Drying apparatus
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
GB1011274A (en) * 1963-06-08 1965-11-24 Westland Aircraft Ltd Means and method for preparing gas-treated objects
US3279964A (en) * 1965-06-03 1966-10-18 Btu Eng Corp Method for continuous gas diffusion

Also Published As

Publication number Publication date
DE1619950A1 (en) 1971-02-18
FR1511289A (en) 1968-01-26
NL6702137A (en) 1967-08-24
US3473510A (en) 1969-10-21

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