NL180894C - Geintegreerde halfgeleiderschakeling, omvattende tenminste een statische inductietransistor van het verticale type met een niet-verzadigde stroom-spanningskarakteristiek, die is verbonden met een andere transistor. - Google Patents

Geintegreerde halfgeleiderschakeling, omvattende tenminste een statische inductietransistor van het verticale type met een niet-verzadigde stroom-spanningskarakteristiek, die is verbonden met een andere transistor.

Info

Publication number
NL180894C
NL180894C NLAANVRAGE7613364,A NL7613364A NL180894C NL 180894 C NL180894 C NL 180894C NL 7613364 A NL7613364 A NL 7613364A NL 180894 C NL180894 C NL 180894C
Authority
NL
Netherlands
Prior art keywords
transistor
current voltage
semiconductor circuit
voltage characteristics
vertical type
Prior art date
Application number
NLAANVRAGE7613364,A
Other languages
English (en)
Other versions
NL7613364A (nl
NL180894B (nl
Original Assignee
Zaidan Hojin Handotai Kenkyu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zaidan Hojin Handotai Kenkyu filed Critical Zaidan Hojin Handotai Kenkyu
Publication of NL7613364A publication Critical patent/NL7613364A/nl
Publication of NL180894B publication Critical patent/NL180894B/nl
Application granted granted Critical
Publication of NL180894C publication Critical patent/NL180894C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/168—V-Grooves

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
NLAANVRAGE7613364,A 1975-12-09 1976-12-01 Geintegreerde halfgeleiderschakeling, omvattende tenminste een statische inductietransistor van het verticale type met een niet-verzadigde stroom-spanningskarakteristiek, die is verbonden met een andere transistor. NL180894C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50146588A JPS5811102B2 (ja) 1975-12-09 1975-12-09 半導体集積回路

Publications (3)

Publication Number Publication Date
NL7613364A NL7613364A (nl) 1977-06-13
NL180894B NL180894B (nl) 1986-12-01
NL180894C true NL180894C (nl) 1987-05-04

Family

ID=15411098

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7613364,A NL180894C (nl) 1975-12-09 1976-12-01 Geintegreerde halfgeleiderschakeling, omvattende tenminste een statische inductietransistor van het verticale type met een niet-verzadigde stroom-spanningskarakteristiek, die is verbonden met een andere transistor.

Country Status (8)

Country Link
US (1) US4259681A (nl)
JP (1) JPS5811102B2 (nl)
CA (1) CA1075826A (nl)
DE (1) DE2655917A1 (nl)
FR (1) FR2335052A1 (nl)
GB (1) GB1572190A (nl)
IT (1) IT1065020B (nl)
NL (1) NL180894C (nl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
CS199407B1 (en) * 1977-01-06 1980-07-31 Artases R Nazarjan Injection integrated circuit
DE2858820C2 (de) * 1977-02-02 1996-09-19 Zaidan Hojin Handotai Kenkyu I·2·L-Schaltungsstruktur
NL191525C (nl) 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
JPS53103770A (en) * 1977-02-22 1978-09-09 Seiko Instr & Electronics Ltd Electronic timepiece
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
JPS53147483A (en) * 1977-05-28 1978-12-22 Handotai Kenkyu Shinkokai Semiconductor ic
US4284997A (en) 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
JPS54103735U (nl) * 1977-12-29 1979-07-21
JPS54162488A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type
JPS5662356A (en) * 1979-10-26 1981-05-28 Seiko Instr & Electronics Ltd Logic integrated circuit device and its manufacturing method
DE3736009C2 (de) * 1986-10-23 1998-03-19 Sony Corp Sperrschicht-FET
US4811063A (en) * 1987-10-20 1989-03-07 General Motors Corporation JMOS transistor utilizing polysilicon sinks
US5498997A (en) * 1994-12-23 1996-03-12 Schiebold; Cristopher F. Transformerless audio amplifier
US11164746B2 (en) * 2018-06-26 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices and a semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1084937A (en) * 1965-03-31 1967-09-27 Standard Telephones Cables Ltd Transistors
GB1507299A (en) * 1974-03-26 1978-04-12 Signetics Corp Integrated semiconductor devices
US3978515A (en) * 1974-04-26 1976-08-31 Bell Telephone Laboratories, Incorporated Integrated injection logic using oxide isolation

Also Published As

Publication number Publication date
NL7613364A (nl) 1977-06-13
DE2655917C2 (nl) 1989-07-13
FR2335052B1 (nl) 1980-09-12
CA1075826A (en) 1980-04-15
DE2655917A1 (de) 1977-06-16
US4259681A (en) 1981-03-31
GB1572190A (en) 1980-07-23
JPS5292468A (en) 1977-08-03
IT1065020B (it) 1985-02-25
FR2335052A1 (fr) 1977-07-08
NL180894B (nl) 1986-12-01
JPS5811102B2 (ja) 1983-03-01

Similar Documents

Publication Publication Date Title
NL180894C (nl) Geintegreerde halfgeleiderschakeling, omvattende tenminste een statische inductietransistor van het verticale type met een niet-verzadigde stroom-spanningskarakteristiek, die is verbonden met een andere transistor.
CH419313A (de) Elektrische Vorrichtung, insbesondere Gleichstrommotor
BE792285A (fr) Circuits de regulation de courant
NL180264C (nl) Bipolaire transistor voor een geintegreerde halfgeleiderschakeling en werkwijzen voor het vervaardigen daarvan.
NL151545B (nl) Inrichting voor het onderbreken van sterke gelijkstromen bij hoge spanningen.
IT938888B (it) Apparato a forza elettromagnetica per la fabbricazione dei circuiti integrati
NL186282C (nl) Geintegreerde schakeling omvattende ten minste een halfgeleiderpoortschakeling van het injektietype met een statische inductietransistor.
HK35376A (en) Electric circuits including semiconductor negative resistance diodes
NL7601307A (nl) Halfgeleiderinrichting met geintegreerde schakeling.
NL184185C (nl) Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
NL139617B (nl) Elektrische weerstand.
NL188724C (nl) Transistorinvertorschakeling.
NL189892B (nl) Transistorinvertorschakeling.
NL174304C (nl) Werkwijze voor het vervaardigen van een geintegreerde halfgeleiderschakeling, die uit complementaire veldeffecttransistors met een geisoleerde stuurelektrode is samengesteld.
NL7710952A (nl) Thyristor met emitterkortsluitingen.
NL148761B (nl) Schakeling voor het verminderen van een wisselspanning, die een nuttige spanning stoort.
NL7410215A (nl) Werkwijze voor het vervaardigen van een geintegreerde schakeling.
JPS5243967A (en) Transistor circuit
NL162247B (nl) Werkwijze voor het vervaardigen van een bipolaire transistor voor een geintegreerde halfgeleider- schakeling.
ZA711493B (en) An electronic device for regulating the voltage of alternators,particularly for motor-vehicles
JPS5291126A (en) Step-up circuit for dc voltage
NL7614428A (nl) Geintegreerde schakeling met komplementaire bipolaire transistoren.
JPS5346650A (en) Transistor withstand voltage increasing dc connecting circuit
NL157990B (nl) Schakeling voor het meten van elektrische wisselstroomenergie.
JPS525275A (en) Transistor

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 961201