NL163904C - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number: NL163904C
Authority: NL; Netherlands
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1973-06-26

Application number

NL7408438.A

Other languages

English (en)

Dutch (nl)

Other versions

NL163904B (nl

NL7408438A (xx

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-06-26

Filing date

1974-06-24

Publication date

1980-10-15

1974-06-24 Application filed by Philips Nv filed Critical Philips Nv

1974-12-30 Publication of NL7408438A publication Critical patent/NL7408438A/xx

1980-05-16 Publication of NL163904B publication Critical patent/NL163904B/xx

1980-10-15 Application granted granted Critical

1980-10-15 Publication of NL163904C publication Critical patent/NL163904C/xx

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)

NL7408438.A 1973-06-26 1974-06-24 Halfgeleiderinrichting. NL163904C (nl)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB3017973A GB1459231A (en)	1973-06-26	1973-06-26	Semiconductor devices

Publications (3)

Publication Number	Publication Date
NL7408438A NL7408438A (xx)	1974-12-30
NL163904B NL163904B (nl)	1980-05-16
NL163904C true NL163904C (nl)	1980-10-15

Family

ID=10303529

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7408438.A NL163904C (nl)	1973-06-26	1974-06-24	Halfgeleiderinrichting.

Country Status (9)

Country	Link
US (1)	US3943552A (xx)
JP (1)	JPS5223217B2 (xx)
CA (1)	CA1003576A (xx)
CH (1)	CH574167A5 (xx)
DE (1)	DE2429705C3 (xx)
FR (1)	FR2235492B1 (xx)
GB (1)	GB1459231A (xx)
IT (1)	IT1015298B (xx)
NL (1)	NL163904C (xx)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4917311A (xx) *	1972-06-12	1974-02-15
US4064620A (en) *	1976-01-27	1977-12-27	Hughes Aircraft Company	Ion implantation process for fabricating high frequency avalanche devices
GB1573309A (en) *	1976-03-24	1980-08-20	Mullard Ltd	Semiconductor devices and their manufacture
JPS55145103A (en) *	1979-04-25	1980-11-12	Sumitomo Electric Ind Ltd	Powder hot forging method
US4313971A (en) *	1979-05-29	1982-02-02	Rca Corporation	Method of fabricating a Schottky barrier contact
DE2950644C2 (de) *	1979-12-15	1985-12-12	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Schottky-Diode
US4350413A (en) *	1980-04-14	1982-09-21	The United States Of America As Represented By The Secretary Of The Navy	Multi-color tunable filter
JPS5732680A (en) *	1980-08-05	1982-02-22	Mitsubishi Electric Corp	Manufacture of schottky barrier diode
US4394673A (en) *	1980-09-29	1983-07-19	International Business Machines Corporation	Rare earth silicide Schottky barriers
GB2090053B (en) *	1980-12-19	1984-09-19	Philips Electronic Associated	Mesfet
US4405934A (en) *	1981-04-13	1983-09-20	Texas Instruments Incorporated	NPM Anti-saturation clamp for NPN logic gate transistor
JPS57178354A (en) *	1981-04-27	1982-11-02	Hitachi Ltd	Semiconductor device
US4783688A (en) *	1981-12-02	1988-11-08	U.S. Philips Corporation	Schottky barrier field effect transistors
US4471367A (en) *	1981-12-04	1984-09-11	At&T Bell Laboratories	MESFET Using a shallow junction gate structure on GaInAs
US4492434A (en) *	1982-01-07	1985-01-08	The United States Of America As Represented By The Secretary Of The Navy	Multi-color tunable semiconductor device
US4665414A (en) *	1982-07-23	1987-05-12	American Telephone And Telegraph Company, At&T Bell Laboratories	Schottky-barrier MOS devices
JPS59135779A (ja) *	1983-01-24	1984-08-04	Mitsubishi Electric Corp	赤外線検出器
JPS60162701A (ja) *	1984-02-01	1985-08-24	Toyota Motor Corp	焼結鍛造品の製造方法
US4587096A (en) *	1985-05-23	1986-05-06	Inco Alloys International, Inc.	Canless method for hot working gas atomized powders
US4742017A (en) *	1986-06-20	1988-05-03	Ford Aerospace Corporation	Implantation method for forming Schottky barrier photodiodes
GB9907021D0 (en)	1999-03-27	1999-05-19	Koninkl Philips Electronics Nv	Switch circuit and semiconductor switch for battery-powered equipment
US20050098843A1 (en) *	2002-12-01	2005-05-12	Igor Touzov	Addressable active materials and technology applications
GB0401579D0 (en) *	2004-01-24	2004-02-25	Koninkl Philips Electronics Nv	Transistor manufacture
US7772063B2 (en) *	2004-08-11	2010-08-10	Identifi Technologies, Inc.	Reduced-step CMOS processes for low-cost radio frequency identification devices
EP1641029A1 (en) *	2004-09-27	2006-03-29	STMicroelectronics S.r.l.	Process for manufacturing a Schottky contact on a semiconductor substrate
JP2006318956A (ja) *	2005-05-10	2006-11-24	Sumitomo Electric Ind Ltd	ショットキーダイオードを有する半導体装置
JP2011119606A (ja) *	2009-12-07	2011-06-16	Sen Corp	半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3560809A (en) *	1968-03-04	1971-02-02	Hitachi Ltd	Variable capacitance rectifying junction diode
US3550260A (en) *	1968-12-26	1970-12-29	Motorola Inc	Method for making a hot carrier pn-diode
US3897275A (en) *	1969-05-22	1975-07-29	Texas Instruments Inc	Process for fabricating schottky barrier phototransistor
BE759058A (xx) *	1969-11-19	1971-05-17	Philips Nv
US3706128A (en) *	1970-06-30	1972-12-19	Varian Associates	Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
US3634738A (en) *	1970-10-06	1972-01-11	Kev Electronics Corp	Diode having a voltage variable capacitance characteristic and method of making same
DE2104752B2 (de) *	1971-02-02	1975-02-20	Philips Patentverwaltung Gmbh, 2000 Hamburg	Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode
US3719797A (en) *	1971-12-16	1973-03-06	Bell Telephone Labor Inc	Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes

1973
- 1973-06-26 GB GB3017973A patent/GB1459231A/en not_active Expired
1974
- 1974-06-18 US US05/480,540 patent/US3943552A/en not_active Expired - Lifetime
- 1974-06-19 CA CA202,852A patent/CA1003576A/en not_active Expired
- 1974-06-20 DE DE2429705A patent/DE2429705C3/de not_active Expired
- 1974-06-21 IT IT24278/74A patent/IT1015298B/it active
- 1974-06-24 NL NL7408438.A patent/NL163904C/xx not_active IP Right Cessation
- 1974-06-24 CH CH863874A patent/CH574167A5/xx not_active IP Right Cessation
- 1974-06-25 FR FR7422048A patent/FR2235492B1/fr not_active Expired
- 1974-06-25 JP JP49071922A patent/JPS5223217B2/ja not_active Expired

Also Published As

Publication number	Publication date
DE2429705B2 (de)	1980-05-22
CH574167A5 (xx)	1976-03-31
DE2429705A1 (de)	1975-01-16
GB1459231A (en)	1976-12-22
CA1003576A (en)	1977-01-11
IT1015298B (it)	1977-05-10
US3943552A (en)	1976-03-09
NL163904B (nl)	1980-05-16
FR2235492B1 (xx)	1979-01-05
JPS5034484A (xx)	1975-04-02
FR2235492A1 (xx)	1975-01-24
DE2429705C3 (de)	1981-01-29
NL7408438A (xx)	1974-12-30
JPS5223217B2 (xx)	1977-06-22

Legal Events

Date	Code	Title	Description
1992-02-17	V1	Lapsed because of non-payment of the annual fee

Publication	Publication Date	Title
NL171121C (nl)	1983-02-16	Anti-conceptie inrichting.
NL7415694A (nl)	1975-06-05	Halfgeleiderinrichting.
NL7311600A (nl)	1975-02-25	Ladingsgekoppelde inrichting.
NL163904C (nl)	1980-10-15	Halfgeleiderinrichting.
NL182110C (nl)	1988-01-04	Halfgeleiderinrichting.
IT1005664B (it)	1976-09-30	Dispositivo semiconduttore
IT1014982B (it)	1977-04-30	Dispositivo semiconduttore
NL7414319A (nl)	1975-05-07	Valse-twijn-inrichting.
NL7415531A (nl)	1975-06-05	Halfgeleiderinrichting.
IT1024876B (it)	1978-07-20	Dispositivo semiconduttore
SE409386B (sv)	1979-08-13	Halvledaranordning
NL163911C (nl)	1980-10-15	Halfgeleiderlaserinrichting.
IT1009920B (it)	1976-12-20	Dispositivo semiconduttore
IT1015296B (it)	1977-05-10	Dispositivo semiconduttore
NL166975C (nl)	1981-10-15	Lichtemitterend apparaat.
IT1012166B (it)	1977-03-10	Dispositivo semiconduttore
IT1025835B (it)	1978-08-30	Dispositivo semiconduttore
IT1015565B (it)	1977-05-20	Dispositivo semiconduttore
IT1017172B (it)	1977-07-20	Dispositivo semiconduttore
NL7414377A (nl)	1975-02-28	Halfgeleiderinrichting.
IT1022417B (it)	1978-03-20	Dispositivo semiconduttore
IT1005316B (it)	1976-08-20	Dispositivo semiconduttore
IT1012257B (it)	1977-03-10	Dispositivo semiconduttore
NL7314466A (nl)	1975-04-22	Halfgeleiderinrichting.
NL175899C (nl)	1985-01-16	Strook-opwindinrichting.