IT1022417B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1022417B IT1022417B IT27842/74A IT2784274A IT1022417B IT 1022417 B IT1022417 B IT 1022417B IT 27842/74 A IT27842/74 A IT 27842/74A IT 2784274 A IT2784274 A IT 2784274A IT 1022417 B IT1022417 B IT 1022417B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48109144A JPS5061194A (it) | 1973-09-27 | 1973-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1022417B true IT1022417B (it) | 1978-03-20 |
Family
ID=14502706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27842/74A IT1022417B (it) | 1973-09-27 | 1974-09-27 | Dispositivo semiconduttore |
Country Status (8)
Country | Link |
---|---|
US (1) | US3986195A (it) |
JP (1) | JPS5061194A (it) |
CA (1) | CA1019054A (it) |
DE (1) | DE2446302A1 (it) |
FR (1) | FR2246983B1 (it) |
GB (1) | GB1474243A (it) |
IT (1) | IT1022417B (it) |
NL (1) | NL7412866A (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4242595A (en) * | 1978-07-27 | 1980-12-30 | University Of Southern California | Tunnel diode load for ultra-fast low power switching circuits |
US4241358A (en) * | 1979-03-26 | 1980-12-23 | Trw Inc. | Radiation sensitive device with lateral current |
US4369371A (en) * | 1980-11-24 | 1983-01-18 | Canadian Patents & Dev. Limited | Broadband high speed optoelectronic semiconductor switch |
US4916505A (en) * | 1981-02-03 | 1990-04-10 | Research Corporation Of The University Of Hawaii | Composite unipolar-bipolar semiconductor devices |
JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3340427A (en) * | 1964-12-28 | 1967-09-05 | Sylvania Electric Prod | Photoconductive means for detecting areas of low-level illumination |
US3868718A (en) * | 1972-06-30 | 1975-02-25 | Sony Corp | Field effect transistor having a pair of gate regions |
US3947761A (en) * | 1973-06-26 | 1976-03-30 | Sony Corporation | Peak level indicator |
-
1973
- 1973-09-27 JP JP48109144A patent/JPS5061194A/ja active Pending
-
1974
- 1974-09-16 US US05/506,123 patent/US3986195A/en not_active Expired - Lifetime
- 1974-09-26 CA CA210,151A patent/CA1019054A/en not_active Expired
- 1974-09-26 GB GB4193274A patent/GB1474243A/en not_active Expired
- 1974-09-27 FR FR7432734A patent/FR2246983B1/fr not_active Expired
- 1974-09-27 NL NL7412866A patent/NL7412866A/xx not_active Application Discontinuation
- 1974-09-27 IT IT27842/74A patent/IT1022417B/it active
- 1974-09-27 DE DE19742446302 patent/DE2446302A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPS5061194A (it) | 1975-05-26 |
CA1019054A (en) | 1977-10-11 |
NL7412866A (nl) | 1975-04-02 |
FR2246983B1 (it) | 1978-06-09 |
GB1474243A (en) | 1977-05-18 |
DE2446302A1 (de) | 1975-04-10 |
FR2246983A1 (it) | 1975-05-02 |
US3986195A (en) | 1976-10-12 |
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