IT1022417B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1022417B
IT1022417B IT27842/74A IT2784274A IT1022417B IT 1022417 B IT1022417 B IT 1022417B IT 27842/74 A IT27842/74 A IT 27842/74A IT 2784274 A IT2784274 A IT 2784274A IT 1022417 B IT1022417 B IT 1022417B
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT27842/74A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1022417B publication Critical patent/IT1022417B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124Devices with PN homojunction gate
    • H01L31/1126Devices with PN homojunction gate the device being a field-effect phototransistor

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT27842/74A 1973-09-27 1974-09-27 Dispositivo semiconduttore IT1022417B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48109144A JPS5061194A (it) 1973-09-27 1973-09-27

Publications (1)

Publication Number Publication Date
IT1022417B true IT1022417B (it) 1978-03-20

Family

ID=14502706

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27842/74A IT1022417B (it) 1973-09-27 1974-09-27 Dispositivo semiconduttore

Country Status (8)

Country Link
US (1) US3986195A (it)
JP (1) JPS5061194A (it)
CA (1) CA1019054A (it)
DE (1) DE2446302A1 (it)
FR (1) FR2246983B1 (it)
GB (1) GB1474243A (it)
IT (1) IT1022417B (it)
NL (1) NL7412866A (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242595A (en) * 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4241358A (en) * 1979-03-26 1980-12-23 Trw Inc. Radiation sensitive device with lateral current
US4369371A (en) * 1980-11-24 1983-01-18 Canadian Patents & Dev. Limited Broadband high speed optoelectronic semiconductor switch
US4916505A (en) * 1981-02-03 1990-04-10 Research Corporation Of The University Of Hawaii Composite unipolar-bipolar semiconductor devices
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340427A (en) * 1964-12-28 1967-09-05 Sylvania Electric Prod Photoconductive means for detecting areas of low-level illumination
US3868718A (en) * 1972-06-30 1975-02-25 Sony Corp Field effect transistor having a pair of gate regions
US3947761A (en) * 1973-06-26 1976-03-30 Sony Corporation Peak level indicator

Also Published As

Publication number Publication date
JPS5061194A (it) 1975-05-26
CA1019054A (en) 1977-10-11
NL7412866A (nl) 1975-04-02
FR2246983B1 (it) 1978-06-09
GB1474243A (en) 1977-05-18
DE2446302A1 (de) 1975-04-10
FR2246983A1 (it) 1975-05-02
US3986195A (en) 1976-10-12

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