NL152119B - Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden. - Google Patents
Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden.Info
- Publication number
- NL152119B NL152119B NL666602337A NL6602337A NL152119B NL 152119 B NL152119 B NL 152119B NL 666602337 A NL666602337 A NL 666602337A NL 6602337 A NL6602337 A NL 6602337A NL 152119 B NL152119 B NL 152119B
- Authority
- NL
- Netherlands
- Prior art keywords
- transition
- channel
- field effect
- effect transistor
- control area
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR942896A FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
FR6722A FR87873E (fr) | 1963-07-26 | 1965-02-23 | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6602337A NL6602337A (nl) | 1966-08-24 |
NL152119B true NL152119B (nl) | 1977-01-17 |
Family
ID=26162207
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL646408428A NL143734B (nl) | 1963-07-26 | 1964-07-23 | Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze. |
NL666602337A NL152119B (nl) | 1963-07-26 | 1966-02-23 | Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL646408428A NL143734B (nl) | 1963-07-26 | 1964-07-23 | Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze. |
Country Status (6)
Country | Link |
---|---|
US (2) | US3372316A (nl) |
CH (2) | CH414872A (nl) |
DE (2) | DE1293900B (nl) |
FR (2) | FR1377330A (nl) |
GB (2) | GB1045314A (nl) |
NL (2) | NL143734B (nl) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés | |
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
US3443172A (en) * | 1965-11-16 | 1969-05-06 | Monsanto Co | Low capacitance field effect transistor |
IT981240B (it) * | 1972-03-10 | 1974-10-10 | Teszner S | Perfezionamenti ai gridistori per iperfrequenze |
JPS5017771A (nl) * | 1973-06-15 | 1975-02-25 | ||
US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
US4670764A (en) * | 1984-06-08 | 1987-06-02 | Eaton Corporation | Multi-channel power JFET with buried field shaping regions |
EP0167810A1 (en) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | Power JFET with plural lateral pinching |
US4633281A (en) * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions |
US4959697A (en) * | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
JP2713205B2 (ja) * | 1995-02-21 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
GB912114A (en) * | 1960-09-26 | 1962-12-05 | Westinghouse Electric Corp | Semiconductor devices |
FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
FR1329626A (fr) * | 1962-04-04 | 1963-06-14 | Europ Des Semi Conducteurs Soc | Perfectionnements aux transistors à effet de champ, de hautes performances |
US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
-
1963
- 1963-07-26 FR FR942896A patent/FR1377330A/fr not_active Expired
-
1964
- 1964-07-23 DE DET26654A patent/DE1293900B/de not_active Withdrawn
- 1964-07-23 NL NL646408428A patent/NL143734B/nl unknown
- 1964-07-24 US US385023A patent/US3372316A/en not_active Expired - Lifetime
- 1964-07-24 CH CH970464A patent/CH414872A/fr unknown
- 1964-08-04 GB GB30972/64A patent/GB1045314A/en not_active Expired
-
1965
- 1965-02-23 FR FR6722A patent/FR87873E/fr not_active Expired
-
1966
- 1966-02-17 CH CH231666A patent/CH429953A/fr unknown
- 1966-02-21 US US528896A patent/US3407342A/en not_active Expired - Lifetime
- 1966-02-22 GB GB7612/66A patent/GB1090696A/en not_active Expired
- 1966-02-23 NL NL666602337A patent/NL152119B/nl unknown
- 1966-02-23 DE DE1514932A patent/DE1514932C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1293900B (de) | 1969-04-30 |
US3407342A (en) | 1968-10-22 |
CH414872A (fr) | 1966-06-15 |
NL6408428A (nl) | 1965-01-27 |
GB1045314A (en) | 1966-10-12 |
NL6602337A (nl) | 1966-08-24 |
FR1377330A (fr) | 1964-11-06 |
NL143734B (nl) | 1974-10-15 |
DE1514932C3 (de) | 1975-01-30 |
DE1514932B2 (de) | 1974-06-12 |
CH429953A (fr) | 1967-02-15 |
DE1514932A1 (de) | 1969-09-11 |
FR87873E (fr) | 1966-07-08 |
US3372316A (en) | 1968-03-05 |
GB1090696A (en) | 1967-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
VJC | Lapsed due to non-payment of the due maintenance fee for the patent or patent application | ||
NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: TESZNER |