Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
  • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
  • H01L29/8083—Vertical transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
  • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S438/00—Semiconductor device manufacturing: process
  • Y10S438/965—Shaped junction formation

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Thyristors (AREA)
• Junction Field-Effect Transistors (AREA)
• Electrodes Of Semiconductors (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=26162207

Family Applications (2)

Family Applications Before (1)

Country Status (6)

Families Citing this family (11)

Family Cites Families (7)

• 1963
  • 1963-07-26 FR FR942896A patent/FR1377330A/fr not_active Expired
• 1964
  • 1964-07-23 NL NL646408428A patent/NL143734B/xx unknown
  • 1964-07-23 DE DET26654A patent/DE1293900B/de not_active Withdrawn
  • 1964-07-24 CH CH970464A patent/CH414872A/fr unknown
  • 1964-07-24 US US385023A patent/US3372316A/en not_active Expired - Lifetime
  • 1964-08-04 GB GB30972/64A patent/GB1045314A/en not_active Expired
• 1965
  • 1965-02-23 FR FR6722A patent/FR87873E/fr not_active Expired
• 1966
  • 1966-02-17 CH CH231666A patent/CH429953A/fr unknown
  • 1966-02-21 US US528896A patent/US3407342A/en not_active Expired - Lifetime
  • 1966-02-22 GB GB7612/66A patent/GB1090696A/en not_active Expired
  • 1966-02-23 NL NL666602337A patent/NL152119B/xx unknown
  • 1966-02-23 DE DE1514932A patent/DE1514932C3/de not_active Expired

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