FR1210880A - Perfectionnements aux transistors à effet de champ - Google Patents

Perfectionnements aux transistors à effet de champ

Info

Publication number
FR1210880A
FR1210880A FR1210880DA FR1210880A FR 1210880 A FR1210880 A FR 1210880A FR 1210880D A FR1210880D A FR 1210880DA FR 1210880 A FR1210880 A FR 1210880A
Authority
FR
France
Prior art keywords
field
effect transistors
transistors
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Joachim Immanuel Franke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1210880A publication Critical patent/FR1210880A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
FR1210880D 1958-08-29 1958-08-29 Perfectionnements aux transistors à effet de champ Expired FR1210880A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR773464 1958-08-29

Publications (1)

Publication Number Publication Date
FR1210880A true FR1210880A (fr) 1960-03-11

Family

ID=8707362

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1210880D Expired FR1210880A (fr) 1958-08-29 1958-08-29 Perfectionnements aux transistors à effet de champ

Country Status (5)

Country Link
US (1) US2952804A (fr)
CH (1) CH370488A (fr)
DE (1) DE1099646B (fr)
FR (1) FR1210880A (fr)
GB (1) GB899858A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1197987B (de) * 1960-01-26 1965-08-05 Fuji Electric Co Ltd Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen
DE1208414B (de) * 1959-12-14 1966-01-05 Westinghouse Electric Corp Betriebsschaltung eines Mehrfach-Halbleiterbauelements aus einer Halbleiterscheibe und mehreren Elektroden auf der einen Hauptoberflaeche und Ausbildung des Halbleiterbauelements
DE1209213B (de) * 1960-05-02 1966-01-20 Westinghouse Electric Corp Unipolartransistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zum Herstellen
DE1639306B1 (de) * 1963-05-30 1971-10-07 Licentia Gmbh Verfahren zum herstellen eines gemeinsamen kontaktes an min destens zwei benachbarten zonen entgegengesetzten leitungs typs eines steuerbaren halbleiterbauelements sowie danach hergestelltes halbleiterbauelement
DE1185294B (de) * 1960-04-01 1974-02-14 Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatte

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1245720A (fr) * 1959-09-30 1960-11-10 Nouvelles structures pour transistor à effet de champ
NL269131A (fr) * 1960-10-25
US3242395A (en) * 1961-01-12 1966-03-22 Philco Corp Semiconductor device having low capacitance junction
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3171042A (en) * 1961-09-08 1965-02-23 Bendix Corp Device with combination of unipolar means and tunnel diode means
DE1150153B (de) * 1962-02-01 1963-06-12 Ibm Deutschland Verfahren zur Herstellung eines Halbleiterbauelementes und nach diesem Verfahren hergestelltes Halbleiterbauelement
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
NL288745A (fr) * 1962-02-19
NL290035A (fr) * 1962-03-12
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3450960A (en) * 1965-09-29 1969-06-17 Ibm Insulated-gate field effect transistor with nonplanar gate electrode structure for optimizing transconductance
NL6703014A (fr) * 1967-02-25 1968-08-26

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (fr) * 1949-11-30
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
NL92927C (fr) * 1954-07-27
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
BE541575A (fr) * 1954-09-27
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
DE1768285U (de) * 1955-10-29 1958-06-12 Siemens Ag Flaechengleichrichter bzw. -transistor.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208414B (de) * 1959-12-14 1966-01-05 Westinghouse Electric Corp Betriebsschaltung eines Mehrfach-Halbleiterbauelements aus einer Halbleiterscheibe und mehreren Elektroden auf der einen Hauptoberflaeche und Ausbildung des Halbleiterbauelements
DE1197987B (de) * 1960-01-26 1965-08-05 Fuji Electric Co Ltd Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen
DE1185294B (de) * 1960-04-01 1974-02-14 Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatte
DE1185294C2 (de) * 1960-04-01 1974-02-14 Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatte
DE1209213B (de) * 1960-05-02 1966-01-20 Westinghouse Electric Corp Unipolartransistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zum Herstellen
DE1639306B1 (de) * 1963-05-30 1971-10-07 Licentia Gmbh Verfahren zum herstellen eines gemeinsamen kontaktes an min destens zwei benachbarten zonen entgegengesetzten leitungs typs eines steuerbaren halbleiterbauelements sowie danach hergestelltes halbleiterbauelement

Also Published As

Publication number Publication date
GB899858A (en) 1962-06-27
CH370488A (fr) 1963-07-15
DE1099646B (de) 1961-02-16
US2952804A (en) 1960-09-13

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