NL1014455A1 - DRAM-celcondensator en vervaardigingswijze daarvan. - Google Patents
DRAM-celcondensator en vervaardigingswijze daarvan.Info
- Publication number
- NL1014455A1 NL1014455A1 NL1014455A NL1014455A NL1014455A1 NL 1014455 A1 NL1014455 A1 NL 1014455A1 NL 1014455 A NL1014455 A NL 1014455A NL 1014455 A NL1014455 A NL 1014455A NL 1014455 A1 NL1014455 A1 NL 1014455A1
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacture
- dram cell
- cell capacitor
- capacitor
- dram
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19990012801 | 1999-04-12 | ||
| KR19990012801 | 1999-04-12 | ||
| KR1019990033767A KR100308622B1 (ko) | 1999-04-12 | 1999-08-17 | 디램 셀 캐패시터 및 제조 방법 |
| KR19990033767 | 1999-08-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1014455A1 true NL1014455A1 (nl) | 2000-10-13 |
| NL1014455C2 NL1014455C2 (nl) | 2003-11-04 |
Family
ID=26634923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1014455A NL1014455C2 (nl) | 1999-04-12 | 2000-02-21 | DRAM-celcondensator en vervaardigingswijze daarvan. |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6479343B1 (nl) |
| JP (1) | JP4900987B2 (nl) |
| KR (1) | KR100308622B1 (nl) |
| DE (1) | DE10007018B4 (nl) |
| GB (1) | GB2349015B (nl) |
| NL (1) | NL1014455C2 (nl) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100414730B1 (ko) * | 2000-06-30 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
| KR100338958B1 (ko) * | 2000-08-31 | 2002-06-01 | 박종섭 | 반도체 소자의 커패시터 형성 방법 |
| KR100709448B1 (ko) * | 2001-06-26 | 2007-04-18 | 주식회사 하이닉스반도체 | 반도체소자의 저장전극 형성방법 |
| KR100702119B1 (ko) * | 2001-06-30 | 2007-03-30 | 주식회사 하이닉스반도체 | 반도체소자의 본딩패드 및 그 제조방법 |
| US6717193B2 (en) * | 2001-10-09 | 2004-04-06 | Koninklijke Philips Electronics N.V. | Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same |
| KR100442104B1 (ko) * | 2001-12-27 | 2004-07-27 | 삼성전자주식회사 | 커패시터를 갖는 반도체 소자의 제조방법 |
| KR100400327B1 (ko) * | 2001-12-29 | 2003-10-01 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
| JP2003297956A (ja) * | 2002-04-04 | 2003-10-17 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| KR100480601B1 (ko) * | 2002-06-21 | 2005-04-06 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| KR100764336B1 (ko) * | 2002-06-29 | 2007-10-05 | 주식회사 하이닉스반도체 | 반도체소자의 저장전극 및 그 제조방법 |
| KR100505062B1 (ko) * | 2003-02-22 | 2005-07-29 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| KR100539272B1 (ko) * | 2003-02-24 | 2005-12-27 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| KR100505675B1 (ko) * | 2003-02-27 | 2005-08-03 | 삼성전자주식회사 | 전극 표면에 대한 다단계 습식 처리 과정을 도입한커패시터 제조 방법 |
| US6872647B1 (en) * | 2003-05-06 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for forming multiple fins in a semiconductor device |
| KR100655751B1 (ko) * | 2004-10-01 | 2006-12-11 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR100593746B1 (ko) * | 2004-12-24 | 2006-06-28 | 삼성전자주식회사 | 디램의 커패시터들 및 그 형성방법들 |
| US20060148168A1 (en) * | 2005-01-06 | 2006-07-06 | Sheng-Chin Li | Process for fabricating dynamic random access memory |
| JP4569924B2 (ja) * | 2005-04-08 | 2010-10-27 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| JP4959979B2 (ja) * | 2005-12-21 | 2012-06-27 | エルピーダメモリ株式会社 | 半導体記憶装置の製造方法 |
| JP4221421B2 (ja) * | 2006-05-29 | 2009-02-12 | エルピーダメモリ株式会社 | 半導体装置およびその製造方法 |
| KR101168389B1 (ko) | 2006-06-28 | 2012-07-25 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
| KR100716641B1 (ko) * | 2006-06-29 | 2007-05-09 | 주식회사 하이닉스반도체 | 비정질카본층을 이용한 실린더형 캐패시터 제조 방법 |
| JP4600836B2 (ja) * | 2006-08-09 | 2010-12-22 | エルピーダメモリ株式会社 | 半導体記憶装置の製造方法 |
| JP2009016596A (ja) * | 2007-07-05 | 2009-01-22 | Elpida Memory Inc | 半導体装置及び半導体装置の製造方法 |
| TWI340435B (en) * | 2007-07-11 | 2011-04-11 | Nanya Technology Corp | Dynamic random access memory with electrostatic discharge structure and method for manufacturing the same |
| JP2009164535A (ja) * | 2008-01-10 | 2009-07-23 | Elpida Memory Inc | 半導体装置、及びその製造方法 |
| US20100012996A1 (en) * | 2008-07-16 | 2010-01-21 | Promos Technologies Inc. | Dynamic random access memory structure |
| KR20100095242A (ko) * | 2009-02-20 | 2010-08-30 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| JP2010287853A (ja) * | 2009-06-15 | 2010-12-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| US8125049B2 (en) | 2009-11-16 | 2012-02-28 | International Business Machines Corporation | MIM capacitor structure in FEOL and related method |
| KR101810531B1 (ko) * | 2011-11-23 | 2017-12-20 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| KR101917816B1 (ko) | 2012-05-08 | 2019-01-29 | 에스케이하이닉스 주식회사 | 캐패시터 및 그 제조 방법 |
| US9178080B2 (en) * | 2012-11-26 | 2015-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench structure for high density capacitor |
| US9978829B2 (en) | 2012-11-26 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low impedance high density deep trench capacitor |
| CN103972153B (zh) * | 2013-01-31 | 2016-08-24 | 华邦电子股份有限公司 | 接触孔插塞的制造方法 |
| US9041154B2 (en) * | 2013-03-06 | 2015-05-26 | Nanya Technology Corp. | Contact structure and semiconductor memory device using the same |
| JP2015084400A (ja) | 2013-09-18 | 2015-04-30 | マイクロン テクノロジー， インク． | 半導体装置及びその製造方法 |
| KR102246277B1 (ko) * | 2014-03-14 | 2021-04-29 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| US9378778B1 (en) | 2015-06-14 | 2016-06-28 | Darryl G. Walker | Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture |
| CN113496954B (zh) * | 2020-04-08 | 2023-08-29 | 长鑫存储技术有限公司 | 存储器的形成方法及存储器 |
| US11469140B2 (en) | 2020-08-25 | 2022-10-11 | Nanya Technology Corporation | Semiconductor device having a landing pad with spacers and method for fabricating the same |
| KR20230107027A (ko) | 2022-01-07 | 2023-07-14 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162249A (en) * | 1989-04-03 | 1992-11-10 | Hyundai Electronics Industries Co., Ltd. | Method of making semiconductor memory device having a double stacked capacitor |
| US5114873A (en) * | 1990-05-21 | 1992-05-19 | Samsung Electronics Co., Ltd. | Method for manufacturing a stacked capacitor DRAM cell |
| US5126280A (en) * | 1991-02-08 | 1992-06-30 | Micron Technology, Inc. | Stacked multi-poly spacers with double cell plate capacitor |
| JPH0777237B2 (ja) * | 1993-01-04 | 1995-08-16 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
| US5480820A (en) * | 1993-03-29 | 1996-01-02 | Motorola, Inc. | Method of making a vertically formed neuron transistor having a floating gate and a control gate and a method of formation |
| US5278091A (en) * | 1993-05-04 | 1994-01-11 | Micron Semiconductor, Inc. | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node |
| US5498889A (en) * | 1993-11-29 | 1996-03-12 | Motorola, Inc. | Semiconductor device having increased capacitance and method for making the same |
| JPH1093042A (ja) * | 1996-09-13 | 1998-04-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| ATE213873T1 (de) * | 1995-04-24 | 2002-03-15 | Infineon Technologies Ag | Halbleiter-speichervorrichtung unter verwendung eines ferroelektrischen dielektrikums und verfahren zur herstellung |
| KR0147655B1 (ko) * | 1995-07-13 | 1998-08-01 | 김광호 | 반도체 장치의 캐패시터 제조방법 |
| US5793076A (en) * | 1995-09-21 | 1998-08-11 | Micron Technology, Inc. | Scalable high dielectric constant capacitor |
| US5633781A (en) * | 1995-12-22 | 1997-05-27 | International Business Machines Corporation | Isolated sidewall capacitor having a compound plate electrode |
| KR0186069B1 (ko) * | 1995-12-28 | 1999-03-20 | 문정환 | 스택형 디램 셀의 캐패시터 제조방법 |
| KR100215867B1 (ko) * | 1996-04-12 | 1999-08-16 | 구본준 | 반도체 소자의 커패시터 구조 및 제조 방법 |
| US6033919A (en) * | 1996-10-25 | 2000-03-07 | Texas Instruments Incorporated | Method of forming sidewall capacitance structure |
| JPH10173148A (ja) * | 1996-12-13 | 1998-06-26 | Hitachi Ltd | 半導体記憶装置 |
| JP3608324B2 (ja) * | 1996-12-27 | 2005-01-12 | ソニー株式会社 | 半導体記憶装置の製造方法 |
| KR100258578B1 (ko) * | 1998-01-15 | 2000-06-15 | 윤종용 | 반도체 메모리 장치의 콘택 형성 방법 |
| KR100266898B1 (ko) * | 1998-03-27 | 2000-10-02 | 윤종용 | 디램 셀 캐패시터의 제조 방법 |
| US5837577A (en) * | 1998-04-24 | 1998-11-17 | Vanguard International Semiconductor Corporation | Method for making self-aligned node contacts to bit lines for capacitor-over-bit-line structures on dynamic random access memory (DRAM) devices |
| US6188100B1 (en) * | 1998-08-19 | 2001-02-13 | Micron Technology, Inc. | Concentric container fin capacitor |
| AU5682399A (en) * | 1998-08-21 | 2000-03-14 | Micron Technology, Inc. | Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry |
| US6124164A (en) * | 1998-09-17 | 2000-09-26 | Micron Technology, Inc. | Method of making integrated capacitor incorporating high K dielectric |
| KR100343291B1 (ko) * | 1999-11-05 | 2002-07-15 | 윤종용 | 반도체 장치의 커패시터 형성 방법 |
| US6362012B1 (en) * | 2001-03-05 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications |
-
1999
- 1999-08-17 KR KR1019990033767A patent/KR100308622B1/ko not_active IP Right Cessation
-
2000
- 2000-01-18 JP JP2000009482A patent/JP4900987B2/ja not_active Expired - Fee Related
- 2000-02-16 DE DE10007018A patent/DE10007018B4/de not_active Expired - Lifetime
- 2000-02-21 NL NL1014455A patent/NL1014455C2/nl not_active IP Right Cessation
- 2000-02-22 US US09/510,247 patent/US6479343B1/en not_active Expired - Lifetime
- 2000-02-22 GB GB0004163A patent/GB2349015B/en not_active Expired - Lifetime
-
2002
- 2002-09-04 US US10/233,535 patent/US6670663B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE10007018A1 (de) | 2000-10-19 |
| JP4900987B2 (ja) | 2012-03-21 |
| DE10007018B4 (de) | 2011-12-22 |
| GB0004163D0 (en) | 2000-04-12 |
| KR20000067767A (ko) | 2000-11-25 |
| US6670663B2 (en) | 2003-12-30 |
| JP2000299448A (ja) | 2000-10-24 |
| GB2349015B (en) | 2003-12-31 |
| GB2349015A (en) | 2000-10-18 |
| US20030008469A1 (en) | 2003-01-09 |
| NL1014455C2 (nl) | 2003-11-04 |
| KR100308622B1 (ko) | 2001-11-01 |
| US6479343B1 (en) | 2002-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20030902 |
|
| PD2B | A search report has been drawn up | ||
| MK | Patent expired because of reaching the maximum lifetime of a patent |
Effective date: 20200220 |