NL1012430C2 - Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. - Google Patents

Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. Download PDF

Info

Publication number: NL1012430C2
Authority: NL; Netherlands
Prior art keywords: semiconductor substrate; etching; manufacturing semiconductor; layer; etching composition
Prior art date: 1998-06-25

Application number

NL1012430A

Other languages

English (en)

Dutch (nl)

Other versions

NL1012430A1 (nl

Inventor

Jun-Ing Gil

Gyu-Hwan Kwag

Se-Jong Ko

Kyung-Seuk Hwang

Sang-O Park

Dae-Hoon Kim

Sang-Moon Chun

Ho-Gyun Jung

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-06-25

Filing date

1999-06-24

Publication date

2004-10-13

1999-06-24 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

2000-01-04 Publication of NL1012430A1 publication Critical patent/NL1012430A1/xx

2004-10-13 Application granted granted Critical

2004-10-13 Publication of NL1012430C2 publication Critical patent/NL1012430C2/nl

Links

238000005530 etching Methods 0.000 title claims description 220
239000004065 semiconductor Substances 0.000 title claims description 216
238000000034 method Methods 0.000 title claims description 170
239000000203 mixture Substances 0.000 title claims description 123
238000004519 manufacturing process Methods 0.000 title claims description 66
239000010410 layer Substances 0.000 claims description 246
239000000758 substrate Substances 0.000 claims description 130
230000008569 process Effects 0.000 claims description 93
239000007800 oxidant agent Substances 0.000 claims description 39
230000001590 oxidative effect Effects 0.000 claims description 39
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 36
229910052721 tungsten Inorganic materials 0.000 claims description 36
239000010937 tungsten Substances 0.000 claims description 36
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
239000008367 deionised water Substances 0.000 claims description 35
229910021641 deionized water Inorganic materials 0.000 claims description 35
239000007853 buffer solution Substances 0.000 claims description 29
230000004888 barrier function Effects 0.000 claims description 28
239000003623 enhancer Substances 0.000 claims description 28
239000000463 material Substances 0.000 claims description 19
239000007789 gas Substances 0.000 claims description 17
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
229920005591 polysilicon Polymers 0.000 claims description 16
239000010949 copper Substances 0.000 claims description 14
229910017855 NH 4 F Inorganic materials 0.000 claims description 13
239000010936 titanium Substances 0.000 claims description 13
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
229910052718 tin Inorganic materials 0.000 claims description 11
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
239000004020 conductor Substances 0.000 claims description 10
229910052802 copper Inorganic materials 0.000 claims description 10
229910052751 metal Inorganic materials 0.000 claims description 10
239000002184 metal Substances 0.000 claims description 10
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
229910017604 nitric acid Inorganic materials 0.000 claims description 8
239000011229 interlayer Substances 0.000 claims description 5
238000002156 mixing Methods 0.000 claims description 4
238000005507 spraying Methods 0.000 claims description 4
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
150000004767 nitrides Chemical class 0.000 claims description 3
238000010438 heat treatment Methods 0.000 claims description 2
239000011261 inert gas Substances 0.000 claims description 2
229910003556 H2 SO4 Inorganic materials 0.000 claims 1
229910003944 H3 PO4 Inorganic materials 0.000 claims 1
229910017900 NH4 F Inorganic materials 0.000 claims 1
229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
238000005498 polishing Methods 0.000 description 20
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
235000012431 wafers Nutrition 0.000 description 16
241000239290 Araneae Species 0.000 description 15
229920002120 photoresistant polymer Polymers 0.000 description 14
238000009499 grossing Methods 0.000 description 13
238000000206 photolithography Methods 0.000 description 11
239000000725 suspension Substances 0.000 description 10
230000015572 biosynthetic process Effects 0.000 description 9
239000000377 silicon dioxide Substances 0.000 description 6
229910004298 SiO 2 Inorganic materials 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
239000000243 solution Substances 0.000 description 5
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
229910052581 Si3N4 Inorganic materials 0.000 description 4
229910052796 boron Inorganic materials 0.000 description 4
239000005380 borophosphosilicate glass Substances 0.000 description 4
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
125000006850 spacer group Chemical group 0.000 description 4
229910052719 titanium Inorganic materials 0.000 description 4
238000005229 chemical vapour deposition Methods 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
239000000126 substance Substances 0.000 description 3
BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
230000007547 defect Effects 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
230000009977 dual effect Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
229910044991 metal oxide Inorganic materials 0.000 description 2
150000004706 metal oxides Chemical class 0.000 description 2
239000002245 particle Substances 0.000 description 2
230000009467 reduction Effects 0.000 description 2
239000007921 spray Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
239000003513 alkali Substances 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
238000005234 chemical deposition Methods 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
239000010408 film Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
238000002955 isolation Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
238000010992 reflux Methods 0.000 description 1
239000002002 slurry Substances 0.000 description 1
238000009987 spinning Methods 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
239000010409 thin film Substances 0.000 description 1
239000011135 tin Substances 0.000 description 1
210000002268 wool Anatomy 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Weting (AREA)
Electrodes Of Semiconductors (AREA)

NL1012430A 1998-06-25 1999-06-24 Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. NL1012430C2 (nl)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
KR19980024232		1998-06-25
KR19980024232		1998-06-25
KR19980031544		1998-08-03
KR1019980031544A KR100271769B1 (ko)	1998-06-25	1998-08-03	반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자

Publications (2)

Publication Number	Publication Date
NL1012430A1 NL1012430A1 (nl)	2000-01-04
NL1012430C2 true NL1012430C2 (nl)	2004-10-13

Family

ID=26633814

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL1012430A NL1012430C2 (nl)	1998-06-25	1999-06-24	Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden.

Country Status (5)

Country	Link
JP (3)	JP4180741B2 (ja)
KR (1)	KR100271769B1 (ja)
DE (1)	DE19928570B4 (ja)
NL (1)	NL1012430C2 (ja)
TW (1)	TW478130B (ja)

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JP4240424B2 (ja)	1998-10-23	2009-03-18	エルジーディスプレイカンパニーリミテッド	エッチング剤及びこれを用いた電子機器用基板の製造方法
US20010054706A1 (en) *	1999-07-19	2001-12-27	Joseph A. Levert	Compositions and processes for spin etch planarization
KR100641950B1 (ko) *	2000-06-27	2006-11-02	주식회사 하이닉스반도체	반도체소자의 콘택플러그 형성방법
JP2002043201A (ja) *	2000-07-28	2002-02-08	Mitsubishi Electric Corp	半導体装置の製造方法及び半導体装置
KR100372647B1 (ko) *	2000-10-13	2003-02-19	주식회사 하이닉스반도체	다마신 금속게이트 형성방법
AU2001296420A1 (en) *	2000-11-28	2002-06-11	Lightcross, Inc	Formation of a smooth surface on an optical component
JP3609761B2 (ja)	2001-07-19	2005-01-12	三洋電機株式会社	半導体装置の製造方法
KR100881388B1 (ko) *	2002-11-04	2009-02-05	주식회사 하이닉스반도체	반도체 소자의 제조 방법
KR100536593B1 (ko) *	2002-12-05	2005-12-14	삼성전자주식회사	선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법
JP4355201B2 (ja) *	2003-12-02	2009-10-28	関東化学株式会社	タングステン金属除去液及びそれを用いたタングステン金属の除去方法
US7351642B2 (en) *	2005-01-14	2008-04-01	Infineon Technologies Richmond, Lp	Deglaze route to compensate for film non-uniformities after STI oxide processing
KR100624089B1 (ko)	2005-07-12	2006-09-15	삼성전자주식회사	패턴 형성 방법, 이를 이용한 다중게이트 산화막 및 플래쉬메모리 셀의 제조 방법
KR101264421B1 (ko)	2005-12-09	2013-05-14	동우 화인켐 주식회사	금속막 식각용액
JP4974904B2 (ja) *	2006-01-31	2012-07-11	株式会社Ｓｕｍｃｏ	ウェーハの枚葉式エッチング方法
JP4906417B2 (ja)	2006-07-11	2012-03-28	ラピスセミコンダクタ株式会社	半導体装置の製造方法
KR100860367B1 (ko)	2006-08-21	2008-09-25	제일모직주식회사	금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
JP5017709B2 (ja)	2006-09-07	2012-09-05	ジルトロニックアクチエンゲゼルシャフト	シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
US8623236B2 (en)	2007-07-13	2014-01-07	Tokyo Ohka Kogyo Co., Ltd.	Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP5047881B2 (ja) *	2007-07-13	2012-10-10	東京応化工業株式会社	窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP5439466B2 (ja) *	2011-12-26	2014-03-12	富士フイルム株式会社	シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
WO2013099955A1 (ja)	2011-12-27	2013-07-04	富士フイルム株式会社	半導体基板製品の製造方法及びこれに利用されるエッチング方法
JP2014146623A (ja) *	2013-01-25	2014-08-14	Fujifilm Corp	半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法
JP6454605B2 (ja) *	2015-06-01	2019-01-16	東芝メモリ株式会社	基板処理方法および基板処理装置
JP6917807B2 (ja) *	2017-07-03	2021-08-11	東京エレクトロン株式会社	基板処理方法
JP7398969B2 (ja) *	2019-03-01	2023-12-15	東京エレクトロン株式会社	基板処理方法、基板処理装置および記憶媒体

Citations (9)

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Publication number	Priority date	Publication date	Assignee	Title
US3825454A (en) *	1972-02-18	1974-07-23	Hitachi Ltd	Method of forming interconnections
US4345969A (en) *	1981-03-23	1982-08-24	Motorola, Inc.	Metal etch solution and method
US4415606A (en) *	1983-01-10	1983-11-15	Ncr Corporation	Method of reworking upper metal in multilayer metal integrated circuits
US4804438A (en) *	1988-02-08	1989-02-14	Eastman Kodak Company	Method of providing a pattern of conductive platinum silicide
EP0324198A1 (en) *	1987-12-02	1989-07-19	Koninklijke Philips Electronics N.V.	Manufacturing method for electrical connections in integrated circuits
EP0510965A1 (en) *	1991-04-23	1992-10-28	Honda Giken Kogyo Kabushiki Kaisha	Wet etching process, applied to a rotating semiconductor substrate
US5340437A (en) *	1993-10-08	1994-08-23	Memc Electronic Materials, Inc.	Process and apparatus for etching semiconductor wafers
US5486234A (en) *	1993-07-16	1996-01-23	The United States Of America As Represented By The United States Department Of Energy	Removal of field and embedded metal by spin spray etching
US5518966A (en) *	1993-12-28	1996-05-21	Hyundai Electronics Industries Co., Ltd.	Method for wet etching polysilicon

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JPS524140A (en) *	1975-06-28	1977-01-13	Victor Co Of Japan Ltd	Data presentation system
US4806504A (en) *	1986-09-11	1989-02-21	Fairchild Semiconductor Corporation	Planarization method
JPH0322428A (ja) *	1989-06-19	1991-01-30	Nec Kyushu Ltd	半導体装置の製造装置
US5449639A (en) *	1994-10-24	1995-09-12	Taiwan Semiconductor Manufacturing Company Ltd.	Disposable metal anti-reflection coating process used together with metal dry/wet etch
JP3459137B2 (ja) *	1995-04-06	2003-10-20	日曹エンジニアリング株式会社	枚葉式スピンエッチング方法
US5863828A (en) *	1996-09-25	1999-01-26	National Semiconductor Corporation	Trench planarization technique
KR100205321B1 (ko) *	1996-12-30	1999-07-01	구본준	크랙방지 패턴을 갖는 반도체소자의 제조방법

1998
- 1998-08-03 KR KR1019980031544A patent/KR100271769B1/ko not_active IP Right Cessation
1999
- 1999-06-22 DE DE19928570A patent/DE19928570B4/de not_active Expired - Fee Related
- 1999-06-24 NL NL1012430A patent/NL1012430C2/nl not_active IP Right Cessation
- 1999-06-24 JP JP17850599A patent/JP4180741B2/ja not_active Expired - Fee Related
- 1999-06-25 TW TW087112709A patent/TW478130B/zh active
2004
- 2004-10-26 JP JP2004310392A patent/JP4343084B2/ja not_active Expired - Fee Related
- 2004-10-26 JP JP2004310391A patent/JP2005057304A/ja active Pending

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3825454A (en) *	1972-02-18	1974-07-23	Hitachi Ltd	Method of forming interconnections
US4345969A (en) *	1981-03-23	1982-08-24	Motorola, Inc.	Metal etch solution and method
US4415606A (en) *	1983-01-10	1983-11-15	Ncr Corporation	Method of reworking upper metal in multilayer metal integrated circuits
EP0324198A1 (en) *	1987-12-02	1989-07-19	Koninklijke Philips Electronics N.V.	Manufacturing method for electrical connections in integrated circuits
US4804438A (en) *	1988-02-08	1989-02-14	Eastman Kodak Company	Method of providing a pattern of conductive platinum silicide
EP0510965A1 (en) *	1991-04-23	1992-10-28	Honda Giken Kogyo Kabushiki Kaisha	Wet etching process, applied to a rotating semiconductor substrate
US5486234A (en) *	1993-07-16	1996-01-23	The United States Of America As Represented By The United States Department Of Energy	Removal of field and embedded metal by spin spray etching
US5340437A (en) *	1993-10-08	1994-08-23	Memc Electronic Materials, Inc.	Process and apparatus for etching semiconductor wafers
US5518966A (en) *	1993-12-28	1996-05-21	Hyundai Electronics Industries Co., Ltd.	Method for wet etching polysilicon

Also Published As

Publication number	Publication date
JP4180741B2 (ja)	2008-11-12
NL1012430A1 (nl)	2000-01-04
TW478130B (en)	2002-03-01
JP2005057304A (ja)	2005-03-03
JP2000031114A (ja)	2000-01-28
JP4343084B2 (ja)	2009-10-14
KR20000004840A (ko)	2000-01-25
KR100271769B1 (ko)	2001-02-01
DE19928570B4 (de)	2008-04-10
JP2005045285A (ja)	2005-02-17
DE19928570A1 (de)	1999-12-30

Legal Events

Date	Code	Title	Description
2000-03-01	AD1A	A request for search or an international type search has been filed
2004-10-01	RD2N	Patents in respect of which a decision has been taken or a report has been made (novelty report)
2004-12-01	PD2B	A search report has been drawn up
2014-01-15	V1	Lapsed because of non-payment of the annual fee	Effective date: 20140101

Publication	Publication Date	Title
NL1012430C2 (nl)	2004-10-13	Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden.
US6232228B1 (en)	2001-05-15	Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
US9614052B2 (en)	2017-04-04	Copper contact plugs with barrier layers
TWI252534B (en)	2006-04-01	Copper CMP defect reduction by extra slurry polish
US6140233A (en)	2000-10-31	Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices thereby
KR101307780B1 (ko)	2013-09-12	반도체 소자의 금속배선 및 그 제조방법
KR19990044960A (ko)	1999-06-25	반도체 장치 및 그 제조 방법
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