NL1012430C2 - Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. - Google Patents
Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. Download PDFInfo
- Publication number
- NL1012430C2 NL1012430C2 NL1012430A NL1012430A NL1012430C2 NL 1012430 C2 NL1012430 C2 NL 1012430C2 NL 1012430 A NL1012430 A NL 1012430A NL 1012430 A NL1012430 A NL 1012430A NL 1012430 C2 NL1012430 C2 NL 1012430C2
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor substrate
- etching
- manufacturing semiconductor
- layer
- etching composition
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims description 220
- 239000004065 semiconductor Substances 0.000 title claims description 216
- 238000000034 method Methods 0.000 title claims description 170
- 239000000203 mixture Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 66
- 239000010410 layer Substances 0.000 claims description 246
- 239000000758 substrate Substances 0.000 claims description 130
- 230000008569 process Effects 0.000 claims description 93
- 239000007800 oxidant agent Substances 0.000 claims description 39
- 230000001590 oxidative effect Effects 0.000 claims description 39
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 36
- 229910052721 tungsten Inorganic materials 0.000 claims description 36
- 239000010937 tungsten Substances 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- 239000008367 deionised water Substances 0.000 claims description 35
- 229910021641 deionized water Inorganic materials 0.000 claims description 35
- 239000007853 buffer solution Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000003623 enhancer Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 14
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910003556 H2 SO4 Inorganic materials 0.000 claims 1
- 229910003944 H3 PO4 Inorganic materials 0.000 claims 1
- 229910017900 NH4 F Inorganic materials 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- 238000005498 polishing Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 241000239290 Araneae Species 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000009499 grossing Methods 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 11
- 239000000725 suspension Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19980024232 | 1998-06-25 | ||
KR19980024232 | 1998-06-25 | ||
KR19980031544 | 1998-08-03 | ||
KR1019980031544A KR100271769B1 (ko) | 1998-06-25 | 1998-08-03 | 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1012430A1 NL1012430A1 (nl) | 2000-01-04 |
NL1012430C2 true NL1012430C2 (nl) | 2004-10-13 |
Family
ID=26633814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1012430A NL1012430C2 (nl) | 1998-06-25 | 1999-06-24 | Werkwijze voor het vervaardigen van halfgeleidereenheden, een etssamenstelling voor het vervaardigen van halfgeleidereenheden, en daarmee verkregen halfgeleidereenheden. |
Country Status (5)
Country | Link |
---|---|
JP (3) | JP4180741B2 (ja) |
KR (1) | KR100271769B1 (ja) |
DE (1) | DE19928570B4 (ja) |
NL (1) | NL1012430C2 (ja) |
TW (1) | TW478130B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4240424B2 (ja) | 1998-10-23 | 2009-03-18 | エルジー ディスプレイ カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法 |
US20010054706A1 (en) * | 1999-07-19 | 2001-12-27 | Joseph A. Levert | Compositions and processes for spin etch planarization |
KR100641950B1 (ko) * | 2000-06-27 | 2006-11-02 | 주식회사 하이닉스반도체 | 반도체소자의 콘택플러그 형성방법 |
JP2002043201A (ja) * | 2000-07-28 | 2002-02-08 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
KR100372647B1 (ko) * | 2000-10-13 | 2003-02-19 | 주식회사 하이닉스반도체 | 다마신 금속게이트 형성방법 |
AU2001296420A1 (en) * | 2000-11-28 | 2002-06-11 | Lightcross, Inc | Formation of a smooth surface on an optical component |
JP3609761B2 (ja) | 2001-07-19 | 2005-01-12 | 三洋電機株式会社 | 半導体装置の製造方法 |
KR100881388B1 (ko) * | 2002-11-04 | 2009-02-05 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100536593B1 (ko) * | 2002-12-05 | 2005-12-14 | 삼성전자주식회사 | 선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법 |
JP4355201B2 (ja) * | 2003-12-02 | 2009-10-28 | 関東化学株式会社 | タングステン金属除去液及びそれを用いたタングステン金属の除去方法 |
US7351642B2 (en) * | 2005-01-14 | 2008-04-01 | Infineon Technologies Richmond, Lp | Deglaze route to compensate for film non-uniformities after STI oxide processing |
KR100624089B1 (ko) | 2005-07-12 | 2006-09-15 | 삼성전자주식회사 | 패턴 형성 방법, 이를 이용한 다중게이트 산화막 및 플래쉬메모리 셀의 제조 방법 |
KR101264421B1 (ko) | 2005-12-09 | 2013-05-14 | 동우 화인켐 주식회사 | 금속막 식각용액 |
JP4974904B2 (ja) * | 2006-01-31 | 2012-07-11 | 株式会社Sumco | ウェーハの枚葉式エッチング方法 |
JP4906417B2 (ja) | 2006-07-11 | 2012-03-28 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR100860367B1 (ko) | 2006-08-21 | 2008-09-25 | 제일모직주식회사 | 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액 |
JP5017709B2 (ja) | 2006-09-07 | 2012-09-05 | ジルトロニック アクチエンゲゼルシャフト | シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法 |
US8623236B2 (en) | 2007-07-13 | 2014-01-07 | Tokyo Ohka Kogyo Co., Ltd. | Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film |
JP5047881B2 (ja) * | 2007-07-13 | 2012-10-10 | 東京応化工業株式会社 | 窒化チタン剥離液、及び窒化チタン被膜の剥離方法 |
JP5439466B2 (ja) * | 2011-12-26 | 2014-03-12 | 富士フイルム株式会社 | シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット |
WO2013099955A1 (ja) | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | 半導体基板製品の製造方法及びこれに利用されるエッチング方法 |
JP2014146623A (ja) * | 2013-01-25 | 2014-08-14 | Fujifilm Corp | 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法 |
JP6454605B2 (ja) * | 2015-06-01 | 2019-01-16 | 東芝メモリ株式会社 | 基板処理方法および基板処理装置 |
JP6917807B2 (ja) * | 2017-07-03 | 2021-08-11 | 東京エレクトロン株式会社 | 基板処理方法 |
JP7398969B2 (ja) * | 2019-03-01 | 2023-12-15 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825454A (en) * | 1972-02-18 | 1974-07-23 | Hitachi Ltd | Method of forming interconnections |
US4345969A (en) * | 1981-03-23 | 1982-08-24 | Motorola, Inc. | Metal etch solution and method |
US4415606A (en) * | 1983-01-10 | 1983-11-15 | Ncr Corporation | Method of reworking upper metal in multilayer metal integrated circuits |
US4804438A (en) * | 1988-02-08 | 1989-02-14 | Eastman Kodak Company | Method of providing a pattern of conductive platinum silicide |
EP0324198A1 (en) * | 1987-12-02 | 1989-07-19 | Koninklijke Philips Electronics N.V. | Manufacturing method for electrical connections in integrated circuits |
EP0510965A1 (en) * | 1991-04-23 | 1992-10-28 | Honda Giken Kogyo Kabushiki Kaisha | Wet etching process, applied to a rotating semiconductor substrate |
US5340437A (en) * | 1993-10-08 | 1994-08-23 | Memc Electronic Materials, Inc. | Process and apparatus for etching semiconductor wafers |
US5486234A (en) * | 1993-07-16 | 1996-01-23 | The United States Of America As Represented By The United States Department Of Energy | Removal of field and embedded metal by spin spray etching |
US5518966A (en) * | 1993-12-28 | 1996-05-21 | Hyundai Electronics Industries Co., Ltd. | Method for wet etching polysilicon |
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---|---|---|---|---|
JPS524140A (en) * | 1975-06-28 | 1977-01-13 | Victor Co Of Japan Ltd | Data presentation system |
US4806504A (en) * | 1986-09-11 | 1989-02-21 | Fairchild Semiconductor Corporation | Planarization method |
JPH0322428A (ja) * | 1989-06-19 | 1991-01-30 | Nec Kyushu Ltd | 半導体装置の製造装置 |
US5449639A (en) * | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
JP3459137B2 (ja) * | 1995-04-06 | 2003-10-20 | 日曹エンジニアリング株式会社 | 枚葉式スピンエッチング方法 |
US5863828A (en) * | 1996-09-25 | 1999-01-26 | National Semiconductor Corporation | Trench planarization technique |
KR100205321B1 (ko) * | 1996-12-30 | 1999-07-01 | 구본준 | 크랙방지 패턴을 갖는 반도체소자의 제조방법 |
-
1998
- 1998-08-03 KR KR1019980031544A patent/KR100271769B1/ko not_active IP Right Cessation
-
1999
- 1999-06-22 DE DE19928570A patent/DE19928570B4/de not_active Expired - Fee Related
- 1999-06-24 NL NL1012430A patent/NL1012430C2/nl not_active IP Right Cessation
- 1999-06-24 JP JP17850599A patent/JP4180741B2/ja not_active Expired - Fee Related
- 1999-06-25 TW TW087112709A patent/TW478130B/zh active
-
2004
- 2004-10-26 JP JP2004310392A patent/JP4343084B2/ja not_active Expired - Fee Related
- 2004-10-26 JP JP2004310391A patent/JP2005057304A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825454A (en) * | 1972-02-18 | 1974-07-23 | Hitachi Ltd | Method of forming interconnections |
US4345969A (en) * | 1981-03-23 | 1982-08-24 | Motorola, Inc. | Metal etch solution and method |
US4415606A (en) * | 1983-01-10 | 1983-11-15 | Ncr Corporation | Method of reworking upper metal in multilayer metal integrated circuits |
EP0324198A1 (en) * | 1987-12-02 | 1989-07-19 | Koninklijke Philips Electronics N.V. | Manufacturing method for electrical connections in integrated circuits |
US4804438A (en) * | 1988-02-08 | 1989-02-14 | Eastman Kodak Company | Method of providing a pattern of conductive platinum silicide |
EP0510965A1 (en) * | 1991-04-23 | 1992-10-28 | Honda Giken Kogyo Kabushiki Kaisha | Wet etching process, applied to a rotating semiconductor substrate |
US5486234A (en) * | 1993-07-16 | 1996-01-23 | The United States Of America As Represented By The United States Department Of Energy | Removal of field and embedded metal by spin spray etching |
US5340437A (en) * | 1993-10-08 | 1994-08-23 | Memc Electronic Materials, Inc. | Process and apparatus for etching semiconductor wafers |
US5518966A (en) * | 1993-12-28 | 1996-05-21 | Hyundai Electronics Industries Co., Ltd. | Method for wet etching polysilicon |
Also Published As
Publication number | Publication date |
---|---|
JP4180741B2 (ja) | 2008-11-12 |
NL1012430A1 (nl) | 2000-01-04 |
TW478130B (en) | 2002-03-01 |
JP2005057304A (ja) | 2005-03-03 |
JP2000031114A (ja) | 2000-01-28 |
JP4343084B2 (ja) | 2009-10-14 |
KR20000004840A (ko) | 2000-01-25 |
KR100271769B1 (ko) | 2001-02-01 |
DE19928570B4 (de) | 2008-04-10 |
JP2005045285A (ja) | 2005-02-17 |
DE19928570A1 (de) | 1999-12-30 |
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