MY172025A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
MY172025A
MY172025A MYPI2014700372A MYPI2014700372A MY172025A MY 172025 A MY172025 A MY 172025A MY PI2014700372 A MYPI2014700372 A MY PI2014700372A MY PI2014700372 A MYPI2014700372 A MY PI2014700372A MY 172025 A MY172025 A MY 172025A
Authority
MY
Malaysia
Prior art keywords
semiconductor substrate
region
anode
layers
semiconductor device
Prior art date
Application number
MYPI2014700372A
Inventor
Soeno Akitaka
Original Assignee
Toyota Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd filed Critical Toyota Motor Co Ltd
Priority to MYPI2014700372A priority Critical patent/MY172025A/en
Priority claimed from PCT/JP2011/069542 external-priority patent/WO2013030943A1/en
Publication of MY172025A publication Critical patent/MY172025A/en

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A semiconductor device in which a diode region (11) and an IGBT region (13) are formed on a same semiconductor substrate (100) is provided. The diode region (11) includes a plurality of first conductivity type anode layers exposed to a surface of the semiconductor substrate (100) and separated from each other. The IGBT region (13) includes a plurality of first conductivity type body contact layers (135) that are exposed to the surface of the semiconductor substrate (100) and separated from each other. The anode layer includes at least one or more of the first anode layers (116). The first anode layer is formed in a position in the proximity of at least IGBT region (13), and an area of a plane direction of the semiconductor substrate (100) in each of the first anode layers (116) is larger than the area of a plane direction of the semiconductor substrate (100) in the body contact layer in the closest proximity of the diode region (11).
MYPI2014700372A 2011-08-30 2011-08-30 Semiconductor device MY172025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MYPI2014700372A MY172025A (en) 2011-08-30 2011-08-30 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2011/069542 WO2013030943A1 (en) 2011-08-30 2011-08-30 Semiconductor device
MYPI2014700372A MY172025A (en) 2011-08-30 2011-08-30 Semiconductor device

Publications (1)

Publication Number Publication Date
MY172025A true MY172025A (en) 2019-11-12

Family

ID=79259615

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014700372A MY172025A (en) 2011-08-30 2011-08-30 Semiconductor device

Country Status (1)

Country Link
MY (1) MY172025A (en)

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