IN2015DN00029A - - Google Patents

Info

Publication number
IN2015DN00029A
IN2015DN00029A IN29DEN2015A IN2015DN00029A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A IN 29DEN2015 A IN29DEN2015 A IN 29DEN2015A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A
Authority
IN
India
Prior art keywords
layer
emitter
regions
conductivity type
passivating
Prior art date
Application number
Inventor
Christophe Ballif
Jonas Geissbühler
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Publication of IN2015DN00029A publication Critical patent/IN2015DN00029A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

The present invention relates to a solar cell comprising a semiconductor wafer (1) an emitter formed by at least one emitter region (20) which comprises at least a first layer (3) of a first conductivity type and a first contact layer (4) allowing a carrier extraction or injection a backcontact comprising at least a second layer (6) of a second conductivity type opposite of said first conductivity type and a second contact layer (4) allowing a carrier extraction or injection electrical contacts (8,9) which are connected to said emitter regions (20) and said backcontact respectively and designed to transport an electrical current out of the solar cell. According to the invention the area of the emitter covers between 0.5% to 15% of the area of a side of the wafer (1) on which the emitter regions (20) are provided the rest of the area of said side of the wafer (1) being covered by first passivating regions (40) which comprise at least a first passivating layer (12,16) and at least one first optional additional layer which makes that the first passivating layer does not allow a carrier extraction or injection said first passivating regions being not fully covered by the first layer (3) of the first conductivity type of the emitter regions (20).
IN29DEN2015 2012-06-29 2012-06-29 IN2015DN00029A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/062776 WO2014000826A1 (en) 2012-06-29 2012-06-29 Solar cell

Publications (1)

Publication Number Publication Date
IN2015DN00029A true IN2015DN00029A (en) 2015-05-22

Family

ID=46420202

Family Applications (1)

Application Number Title Priority Date Filing Date
IN29DEN2015 IN2015DN00029A (en) 2012-06-29 2012-06-29

Country Status (6)

Country Link
US (1) US20150144184A1 (en)
EP (1) EP2867926B1 (en)
JP (1) JP2015525961A (en)
CN (1) CN104412394B (en)
IN (1) IN2015DN00029A (en)
WO (1) WO2014000826A1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015118740A1 (en) * 2014-02-06 2015-08-13 パナソニックＩｐマネジメント株式会社 Solar cell
JP6350858B2 (en) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 Solar cell manufacturing method and solar cell
JP6422455B2 (en) * 2016-02-08 2018-11-14 三菱電機株式会社 Photoelectric conversion device and method for manufacturing photoelectric conversion device
CN108461570A (en) * 2018-03-12 2018-08-28 南昌大学 A kind of crystal silicon double-side solar cell structure
CN108346707A (en) * 2018-03-12 2018-07-31 南昌大学 A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer
CN108346706A (en) * 2018-03-12 2018-07-31 南昌大学 A kind of local emitter homojunction crystal silicon double-side solar cell structure
CN108336178A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of silicon/crystalline silicon heterojunction double-side solar cell structure
CN108336156A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of crystal silicon double-side solar cell structure with HAC-D features
CN108336160A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of crystal silicon double-side solar cell structure being passivated into photosphere
CN108336159A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of hetero-junctions crystal silicon double-side solar cell structure
CN108461569B (en) * 2018-03-12 2020-07-14 南昌大学 Si-based double-sided solar cell structure with local emitter characteristic
CN108305910A (en) * 2018-03-12 2018-07-20 南昌大学 A kind of homojunction crystal silicon double-side solar cell structure
CN108365024A (en) * 2018-03-12 2018-08-03 南昌大学 A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature
CN108336155A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of HAC-D crystal silicon double-side solar cell structure
CN108447935A (en) * 2018-03-12 2018-08-24 南昌大学 A kind of local emitter crystalline silicon double-side solar cell structure being passivated into photosphere
CN108336157A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field
CN108461553A (en) * 2018-03-12 2018-08-28 南昌大学 A kind of double-side solar cell structure with local amorphous silicon/crystalline silicon heterojunction characteristic
CN108336164A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure
CN108336158A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of homojunction crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer
CN108336176A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of Si bases local emitter double-side solar cell structure
CN110896107A (en) * 2018-09-13 2020-03-20 福建金石能源有限公司 Back contact heterojunction solar cell with double-sided power generation and manufacturing method thereof
EP3624204B1 (en) * 2018-09-13 2023-04-26 IMEC vzw Selective deposition for interdigitated patterns in solar cells
CN112310232B (en) * 2020-10-16 2023-03-24 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and cell module
CN113410328A (en) * 2021-05-12 2021-09-17 北京工业大学 Crystalline silicon heterojunction solar cell
CN113823704A (en) * 2021-11-23 2021-12-21 陕西众森电能科技有限公司 P-type silicon back contact solar cell and preparation method thereof
EP4318607A1 (en) 2022-08-05 2024-02-07 Zhejiang Jinko Solar Co., Ltd. Solar cell and photovoltaic module

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US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
US5034068A (en) * 1990-02-23 1991-07-23 Spectrolab, Inc. Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
JP3203078B2 (en) * 1992-12-09 2001-08-27 三洋電機株式会社 Photovoltaic element
JP3448098B2 (en) * 1994-05-31 2003-09-16 シャープ株式会社 Crystalline silicon solar cells
JP2003298078A (en) * 2002-03-29 2003-10-17 Ebara Corp Photoelectromotive element
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US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
CN101814555B (en) * 2010-04-12 2012-07-25 浙江大学 Method for improving efficiency of solar cell

Also Published As

Publication number Publication date
EP2867926A1 (en) 2015-05-06
CN104412394B (en) 2016-11-09
JP2015525961A (en) 2015-09-07
CN104412394A (en) 2015-03-11
WO2014000826A1 (en) 2014-01-03
US20150144184A1 (en) 2015-05-28
EP2867926B1 (en) 2017-04-05

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