SG10201805060XA - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
SG10201805060XA
SG10201805060XA SG10201805060XA SG10201805060XA SG10201805060XA SG 10201805060X A SG10201805060X A SG 10201805060XA SG 10201805060X A SG10201805060X A SG 10201805060XA SG 10201805060X A SG10201805060X A SG 10201805060XA SG 10201805060X A SG10201805060X A SG 10201805060XA
Authority
SG
Singapore
Prior art keywords
common source
substrate
extension region
source extension
channel structures
Prior art date
Application number
SG10201805060XA
Inventor
Kim Kwang-Soo
Kim Yong-Seok
Kim Tae-Hun
Bae Min-Kyung
Jang Jae-Hoon
Kanamori Kohji
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201805060XA publication Critical patent/SG10201805060XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

OF THE DISCLOSURE A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region. FIG. 2
SG10201805060XA 2017-06-21 2018-06-13 Semiconductor device and method of manufacturing the same SG10201805060XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170078589A KR102370618B1 (en) 2017-06-21 2017-06-21 Semiconductor devices and method of manufacturing the same

Publications (1)

Publication Number Publication Date
SG10201805060XA true SG10201805060XA (en) 2019-01-30

Family

ID=64693532

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201805060XA SG10201805060XA (en) 2017-06-21 2018-06-13 Semiconductor device and method of manufacturing the same

Country Status (4)

Country Link
US (2) US10411033B2 (en)
KR (1) KR102370618B1 (en)
CN (1) CN109103198B (en)
SG (1) SG10201805060XA (en)

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KR102370618B1 (en) * 2017-06-21 2022-03-04 삼성전자주식회사 Semiconductor devices and method of manufacturing the same
KR102380824B1 (en) 2017-12-04 2022-03-31 삼성전자주식회사 Semiconductor device
KR20200076806A (en) * 2018-12-19 2020-06-30 삼성전자주식회사 Vertical memory device
CN113707665B (en) * 2019-01-02 2024-05-07 长江存储科技有限责任公司 Memory and forming method thereof
US10923498B2 (en) * 2019-04-25 2021-02-16 Sandisk Technologies Llc Three-dimensional memory device containing direct source contact structure and methods for making the same
KR20200141117A (en) * 2019-06-10 2020-12-18 삼성전자주식회사 Semiconductor device and method for fabricating the same
KR20210008448A (en) * 2019-07-08 2021-01-22 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method of semiconductor device
KR20210083806A (en) 2019-12-27 2021-07-07 삼성전자주식회사 Semiconductor device
KR20210092090A (en) 2020-01-15 2021-07-23 에스케이하이닉스 주식회사 Semiconductor memory device and manufacturing method thereof
CN111211128B (en) * 2020-01-15 2023-12-01 长江存储科技有限责任公司 3D memory device and method of manufacturing the same
KR20210093526A (en) 2020-01-20 2021-07-28 삼성전자주식회사 Semiconductor devices including a supporter
CN111341786B (en) * 2020-03-11 2023-07-28 长江存储科技有限责任公司 Three-dimensional memory and method for manufacturing the same
KR20210117392A (en) * 2020-03-18 2021-09-29 삼성전자주식회사 Three-dimensional semiconductor devices
US11527630B2 (en) * 2020-06-24 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same

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KR101731060B1 (en) * 2010-09-27 2017-04-28 삼성전자주식회사 A vertical type semiconductor device and method of manufacturing the same
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Also Published As

Publication number Publication date
KR20180138410A (en) 2018-12-31
CN109103198B (en) 2023-10-24
KR102370618B1 (en) 2022-03-04
US20190355744A1 (en) 2019-11-21
CN109103198A (en) 2018-12-28
US10411033B2 (en) 2019-09-10
US10854630B2 (en) 2020-12-01
US20180374869A1 (en) 2018-12-27

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