MXPA03005993A - Metodo para la microfabricacion de estructuras usando silicio sobre material aislador. - Google Patents

Metodo para la microfabricacion de estructuras usando silicio sobre material aislador.

Info

Publication number
MXPA03005993A
MXPA03005993A MXPA03005993A MXPA03005993A MXPA03005993A MX PA03005993 A MXPA03005993 A MX PA03005993A MX PA03005993 A MXPA03005993 A MX PA03005993A MX PA03005993 A MXPA03005993 A MX PA03005993A MX PA03005993 A MXPA03005993 A MX PA03005993A
Authority
MX
Mexico
Prior art keywords
soi wafer
silicon
layer
substrate
microfabricating
Prior art date
Application number
MXPA03005993A
Other languages
English (en)
Inventor
Borenstein Jeffrey
Original Assignee
Draper Lab Charles S
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Draper Lab Charles S filed Critical Draper Lab Charles S
Publication of MXPA03005993A publication Critical patent/MXPA03005993A/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00119—Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

La invencion proporciona un metodo de fabricacion general para producir Sistemas MicroElectroMecanicos (MEMS) y dispositivos relacionados, usando Silicio Sobre Aislador (SOI). Primero se obtiene una microplaqueta de SOI que tiene (i) una capa de manipulacion, (ii) una capa dielectrica, e (iii) una capa de dispositivo. Sobre la capa de dispositivo de la microplaqueta de SOI se encuentra hecho un grabado por ataque quimico, tipo meseta, y sobre la capa dielectrica de la microplaqueta de SOI se encuentra hecho un grabado por ataque quimico estructural. Posteriormente se obtiene un substrato (tal como de vidrio o silicio) sobre el cual se ha producido un patron por ataque quimico. La microplaqueta de SOI y el substrato se unen entre si. Despues se retira la capa de manipulacion de la microplaqueta de SOI, seguido por la capa dielectrica de la microplaqueta de SOI.
MXPA03005993A 2001-01-02 2002-01-02 Metodo para la microfabricacion de estructuras usando silicio sobre material aislador. MXPA03005993A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25928201P 2001-01-02 2001-01-02
PCT/US2002/000015 WO2002054475A1 (en) 2001-01-02 2002-01-02 Method for microfabricating structures using silicon-on-insulator material

Publications (1)

Publication Number Publication Date
MXPA03005993A true MXPA03005993A (es) 2004-05-04

Family

ID=22984303

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA03005993A MXPA03005993A (es) 2001-01-02 2002-01-02 Metodo para la microfabricacion de estructuras usando silicio sobre material aislador.

Country Status (5)

Country Link
US (1) US6673694B2 (es)
EP (1) EP1364398A4 (es)
CA (1) CA2433738C (es)
MX (1) MXPA03005993A (es)
WO (1) WO2002054475A1 (es)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
US6946314B2 (en) * 2001-01-02 2005-09-20 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
FR2842647B1 (fr) * 2002-07-17 2004-09-17 Soitec Silicon On Insulator Procede de transfert de couche
AU2003272215B2 (en) * 2002-08-15 2009-09-10 The Charles Stark Draper Laboratory, Inc Method for microfabricating structures using silicon-on-insulator material
US7224035B1 (en) * 2002-10-07 2007-05-29 Zyvex Corporation Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween
US20040065638A1 (en) * 2002-10-07 2004-04-08 Bishnu Gogoi Method of forming a sensor for detecting motion
JP4556158B2 (ja) * 2002-10-22 2010-10-06 株式会社Ｓｕｍｃｏ 貼り合わせｓｏｉ基板の製造方法および半導体装置
FR2850390B1 (fr) * 2003-01-24 2006-07-14 Soitec Silicon On Insulator Procede d'elimination d'une zone peripherique de colle lors de la fabrication d'un substrat composite
US7122095B2 (en) * 2003-03-14 2006-10-17 S.O.I.Tec Silicon On Insulator Technologies S.A. Methods for forming an assembly for transfer of a useful layer
US7202123B1 (en) 2004-07-02 2007-04-10 Advanced Micro Devices, Inc. Mesa isolation technology for extremely thin silicon-on-insulator semiconductor devices
US7239774B1 (en) * 2004-08-13 2007-07-03 Lightconnect, Inc. Optical steering element and method
US7300814B2 (en) 2004-12-16 2007-11-27 The Charles Stark Draper Laboratory, Inc. Method for fabricating micro-mechanical devices
US7279406B2 (en) * 2004-12-22 2007-10-09 Texas Instruments Incorporated Tailoring channel strain profile by recessed material composition control
US7302848B2 (en) 2005-03-10 2007-12-04 The Charles Stark Draper Laboratory, Inc. Force compensated comb drive
US7406761B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Method of manufacturing vibrating micromechanical structures
KR101245296B1 (ko) * 2005-04-06 2013-03-19 바이오스케일, 아이엔씨. 전기 응답 디바이스
US9164051B2 (en) 2005-04-06 2015-10-20 Bioscale, Inc. Electrically responsive device
US7527997B2 (en) * 2005-04-08 2009-05-05 The Research Foundation Of State University Of New York MEMS structure with anodically bonded silicon-on-insulator substrate
US7749863B1 (en) * 2005-05-12 2010-07-06 Hrl Laboratories, Llc Thermal management substrates
US8227261B2 (en) * 2005-11-23 2012-07-24 Bioscale, Inc. Methods and apparatus for assay measurements
US8034719B1 (en) 2005-12-08 2011-10-11 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating high aspect ratio metal structures
JP5100396B2 (ja) * 2005-12-20 2012-12-19 北陸電気工業株式会社 半導体センサ用センサ本体の製造方法
US8004021B2 (en) * 2006-04-21 2011-08-23 Bioscale, Inc. Microfabricated devices and method for fabricating microfabricated devices
US8614110B1 (en) * 2006-07-25 2013-12-24 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating a dual-crystalline silicon suspension system using pre-fabricated cavities
US20080121042A1 (en) * 2006-11-27 2008-05-29 Bioscale, Inc. Fluid paths in etchable materials
US7999440B2 (en) * 2006-11-27 2011-08-16 Bioscale, Inc. Micro-fabricated devices having a suspended membrane or plate structure
EP2097263B1 (en) * 2006-12-22 2012-02-08 Telecom Italia S.p.A. Ink-jet printhead manufacturing process
JP2009088854A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd マイクロメカニカル共振器およびその製造方法
US7772059B2 (en) * 2008-01-16 2010-08-10 Texas Instruments Incorporated Method for fabricating graphene transistors on a silicon or SOI substrate
US7687308B2 (en) * 2008-08-15 2010-03-30 Texas Instruments Incorporated Method for fabricating carbon nanotube transistors on a silicon or SOI substrate
WO2012020899A1 (ko) * 2010-08-10 2012-02-16 연세대학교 산학협력단 반사 방지성 유리 및 그 제조 방법
US8440544B2 (en) 2010-10-06 2013-05-14 International Business Machines Corporation CMOS structure and method of manufacture
US8502327B1 (en) 2012-01-26 2013-08-06 Honeywell International Inc. Systems and methods for conductive pillars
US11530917B2 (en) 2018-09-24 2022-12-20 The Charles Stark Draper Laboratory, Inc. Methods for fabricating silicon MEMS gyroscopes with upper and lower sense plates
CN113479841B (zh) * 2021-05-24 2024-05-28 中国电子科技集团公司第五十五研究所 一种硅基微流道基板制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US4079508A (en) * 1975-08-13 1978-03-21 The Board Of Trustees Of The Leland Stanford Junior University Miniature absolute pressure transducer assembly and method
JP3367113B2 (ja) * 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
US5488012A (en) * 1993-10-18 1996-01-30 The Regents Of The University Of California Silicon on insulator with active buried regions
JP3319912B2 (ja) * 1995-06-29 2002-09-03 株式会社デンソー 半導体センサ用台座およびその加工方法
US5920013A (en) * 1997-02-07 1999-07-06 Ford Motor Company Silicon micromachine with sacrificial pedestal
US6287885B1 (en) * 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
US6105427A (en) * 1998-07-31 2000-08-22 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer
JP2000323484A (ja) * 1999-05-07 2000-11-24 Mitsubishi Electric Corp 半導体装置及び半導体記憶装置
JP3065611B1 (ja) 1999-05-28 2000-07-17 三菱電機株式会社 マイクロミラ―装置およびその製造方法
US6277666B1 (en) 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US6458615B1 (en) * 1999-09-30 2002-10-01 Carnegie Mellon University Method of fabricating micromachined structures and devices formed therefrom
US6431714B1 (en) * 2000-10-10 2002-08-13 Nippon Telegraph And Telephone Corporation Micro-mirror apparatus and production method therefor

Also Published As

Publication number Publication date
US20020190319A1 (en) 2002-12-19
CA2433738A1 (en) 2002-07-11
EP1364398A4 (en) 2011-11-30
US6673694B2 (en) 2004-01-06
WO2002054475A1 (en) 2002-07-11
EP1364398A1 (en) 2003-11-26
CA2433738C (en) 2012-07-24

Similar Documents

Publication Publication Date Title
MXPA03005993A (es) Metodo para la microfabricacion de estructuras usando silicio sobre material aislador.
WO2005017972A3 (en) Method for microfabricating structures using silicon-on-insulator material
EP0955668A3 (en) Process for manufacture of micro electromechanical devices having high electrical isolation
ATE511493T1 (de) Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen
WO2002057180A3 (en) Soi/glass process for forming thin silicon micromachined structures
AU5874099A (en) Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer
WO2006019761A3 (en) Mems device and interposer and method for integrating mems device and interposer
CA2501580A1 (en) Method of forming strained silicon on insulator (ssoi) and structures formed thereby
US6610582B1 (en) Field-assisted fusion bonding
EP1139159A3 (en) Article comprising an optical cavity
EP1253108A3 (en) Method of fabricating suspended microstructures
EP1803684A3 (en) Vacuum packaged single crystal silicon resonator
EP0779650A3 (en) Fabrication process of SOI substrate
WO2004006311A3 (en) Transfer of a thin layer from a wafer comprising a buffer layer
TW200601489A (en) STI formation in semiconductor device including SOI and bulk silicon regions
WO2002095800A3 (en) A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
EP1886969A3 (en) Methods of fabrication of wafer-level vacuum packaged devices
AU2002227969A1 (en) Method for producing a fluid component, fluid component and an analysis device
WO2005043573A3 (en) A method of manufacturing an electronic device and electronic device
EP1213259A3 (en) Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step
JP2007015101A (ja) 隠れヒンジｍｅｍｓデバイス
AU2003272580A1 (en) Fabrication of film bulk acoustic resonators on silicon less than110greater than wafers using crystal-orientation-dependent anisotropic etching
KR100510821B1 (ko) 미세 구조물이 형성된 기판과 그 기판의 제조방법
WO2004017371A3 (en) Method for microfabricating structures using silicon-on-insulator material
WO2002051743A3 (en) Thin silicon micromachined structures

Legal Events

Date Code Title Description
FG Grant or registration