FR2842647B1 - Procede de transfert de couche - Google Patents
Procede de transfert de coucheInfo
- Publication number
- FR2842647B1 FR2842647B1 FR0209018A FR0209018A FR2842647B1 FR 2842647 B1 FR2842647 B1 FR 2842647B1 FR 0209018 A FR0209018 A FR 0209018A FR 0209018 A FR0209018 A FR 0209018A FR 2842647 B1 FR2842647 B1 FR 2842647B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- source
- support
- recess
- front face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0209018A FR2842647B1 (fr) | 2002-07-17 | 2002-07-17 | Procede de transfert de couche |
| US10/616,586 US6913971B2 (en) | 2002-07-17 | 2003-07-09 | Layer transfer methods |
| EP03763890A EP1543553B1 (fr) | 2002-07-17 | 2003-07-16 | Procede de transfert de couche |
| TW092119343A TWI286816B (en) | 2002-07-17 | 2003-07-16 | A layer transfer method |
| AU2003250992A AU2003250992A1 (en) | 2002-07-17 | 2003-07-16 | A layer transfer method |
| DE60335995T DE60335995D1 (de) | 2002-07-17 | 2003-07-16 | Schichtentransferverfahren |
| AT03763890T ATE498201T1 (de) | 2002-07-17 | 2003-07-16 | Schichtentransferverfahren |
| PCT/EP2003/007853 WO2004008526A1 (fr) | 2002-07-17 | 2003-07-16 | Procede de transfert de couche |
| JP2004520666A JP4740590B2 (ja) | 2002-07-17 | 2003-07-16 | 層転写方法 |
| MYPI20032677A MY135493A (en) | 2002-07-17 | 2003-07-17 | Layer transfer methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0209018A FR2842647B1 (fr) | 2002-07-17 | 2002-07-17 | Procede de transfert de couche |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2842647A1 FR2842647A1 (fr) | 2004-01-23 |
| FR2842647B1 true FR2842647B1 (fr) | 2004-09-17 |
Family
ID=29797483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0209018A Expired - Fee Related FR2842647B1 (fr) | 2002-07-17 | 2002-07-17 | Procede de transfert de couche |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6913971B2 (fr) |
| EP (1) | EP1543553B1 (fr) |
| JP (1) | JP4740590B2 (fr) |
| AT (1) | ATE498201T1 (fr) |
| AU (1) | AU2003250992A1 (fr) |
| DE (1) | DE60335995D1 (fr) |
| FR (1) | FR2842647B1 (fr) |
| MY (1) | MY135493A (fr) |
| TW (1) | TWI286816B (fr) |
| WO (1) | WO2004008526A1 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1571705A3 (fr) * | 2004-03-01 | 2006-01-04 | S.O.I.Tec Silicon on Insulator Technologies | Réalisation d'une entité en matériau semiconducteur sur substrat |
| EP1978554A3 (fr) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de fabrication d'un substrat semi-conducteur comprenant des étapes d'implantation et de séparation. |
| FR2939962B1 (fr) * | 2008-12-15 | 2011-03-18 | Soitec Silicon On Insulator | Procede d'amincissement d'une structure. |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| WO2011144226A1 (fr) * | 2010-05-20 | 2011-11-24 | Ev Group E. Thallner Gmbh | Procédé de fabrication d'empilements de puces ainsi que support pour la mise en œuvre du procédé |
| FR2961948B1 (fr) * | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
| JP5939881B2 (ja) * | 2012-05-02 | 2016-06-22 | 株式会社ディスコ | 研削方法 |
| WO2014020387A1 (fr) | 2012-07-31 | 2014-02-06 | Soitec | Procédés de formation de structures semi-conductrices incluant des dispositifs de microsystème électromécanique et des circuits intégrés sur les côtés opposés de substrats, et structures ainsi que dispositifs connexes |
| DE102014102917B4 (de) * | 2013-03-05 | 2024-01-18 | Flextronics Ap, Llc | Bauteil mit Abzugsstrecken, Halbleiterbaugruppe mit Druckentlastungsstruktur und Verfahren zur Verhinderung von Druckaufbau in einer Halbleiterverpackung |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61208842A (ja) * | 1985-03-14 | 1986-09-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体ウエハ支持基板 |
| JPH0521480A (ja) * | 1991-07-12 | 1993-01-29 | Dainippon Printing Co Ltd | リードフレーム |
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JPH0737768A (ja) * | 1992-11-26 | 1995-02-07 | Sumitomo Electric Ind Ltd | 半導体ウェハの補強方法及び補強された半導体ウェハ |
| JPH07335817A (ja) * | 1994-06-10 | 1995-12-22 | Dainippon Printing Co Ltd | リードフレーム部材 |
| JPH0963912A (ja) * | 1995-08-18 | 1997-03-07 | Hoya Corp | 貼り合わせ基板製造方法 |
| JPH09232199A (ja) * | 1996-02-27 | 1997-09-05 | Victor Co Of Japan Ltd | 薄膜プロセス用複合ウェハ基板 |
| ATE261612T1 (de) * | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
| US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| US6406336B1 (en) | 1998-01-20 | 2002-06-18 | Fci Americas Technology, Inc. | Contact with anti-skiving feature |
| US6054370A (en) * | 1998-06-30 | 2000-04-25 | Intel Corporation | Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer |
| FR2781925B1 (fr) * | 1998-07-30 | 2001-11-23 | Commissariat Energie Atomique | Transfert selectif d'elements d'un support vers un autre support |
| JP2000223683A (ja) | 1999-02-02 | 2000-08-11 | Canon Inc | 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにｓｏｉ基板の製造方法 |
| US6236103B1 (en) * | 1999-03-31 | 2001-05-22 | International Business Machines Corp. | Integrated high-performance decoupling capacitor and heat sink |
| US6406636B1 (en) * | 1999-06-02 | 2002-06-18 | Megasense, Inc. | Methods for wafer to wafer bonding using microstructures |
| JP2001007362A (ja) * | 1999-06-17 | 2001-01-12 | Canon Inc | 半導体基材および太陽電池の製造方法 |
| JP2001196566A (ja) * | 2000-01-07 | 2001-07-19 | Sony Corp | 半導体基板およびその製造方法 |
| JP4361658B2 (ja) * | 2000-02-14 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 実装基板及び実装方法 |
| JP2001296650A (ja) * | 2000-04-17 | 2001-10-26 | Nec Corp | レチクル |
| FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
| CA2433738C (fr) * | 2001-01-02 | 2012-07-24 | The Charles Stark Draper Laboratory, Inc. | Procede de microusinage de structures utilisant un materiau de silicium sur isolant |
| FR2837620B1 (fr) * | 2002-03-25 | 2005-04-29 | Commissariat Energie Atomique | Procede de transfert d'elements de substrat a substrat |
-
2002
- 2002-07-17 FR FR0209018A patent/FR2842647B1/fr not_active Expired - Fee Related
-
2003
- 2003-07-09 US US10/616,586 patent/US6913971B2/en not_active Expired - Lifetime
- 2003-07-16 WO PCT/EP2003/007853 patent/WO2004008526A1/fr active Application Filing
- 2003-07-16 TW TW092119343A patent/TWI286816B/zh not_active IP Right Cessation
- 2003-07-16 EP EP03763890A patent/EP1543553B1/fr not_active Expired - Lifetime
- 2003-07-16 JP JP2004520666A patent/JP4740590B2/ja not_active Expired - Fee Related
- 2003-07-16 AU AU2003250992A patent/AU2003250992A1/en not_active Abandoned
- 2003-07-16 DE DE60335995T patent/DE60335995D1/de not_active Expired - Lifetime
- 2003-07-16 AT AT03763890T patent/ATE498201T1/de not_active IP Right Cessation
- 2003-07-17 MY MYPI20032677A patent/MY135493A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004008526A1 (fr) | 2004-01-22 |
| AU2003250992A8 (en) | 2004-02-02 |
| FR2842647A1 (fr) | 2004-01-23 |
| US20040082147A1 (en) | 2004-04-29 |
| MY135493A (en) | 2008-04-30 |
| EP1543553B1 (fr) | 2011-02-09 |
| DE60335995D1 (de) | 2011-03-24 |
| TWI286816B (en) | 2007-09-11 |
| TW200416943A (en) | 2004-09-01 |
| AU2003250992A1 (en) | 2004-02-02 |
| ATE498201T1 (de) | 2011-02-15 |
| JP2005533374A (ja) | 2005-11-04 |
| EP1543553A1 (fr) | 2005-06-22 |
| US6913971B2 (en) | 2005-07-05 |
| JP4740590B2 (ja) | 2011-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name |
Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE, FR Effective date: 20120423 Owner name: SOITEC, FR Effective date: 20120423 |
|
| PLFP | Fee payment |
Year of fee payment: 14 |
|
| ST | Notification of lapse |
Effective date: 20170331 |