WO2004017371A3 - Method for microfabricating structures using silicon-on-insulator material - Google Patents

Method for microfabricating structures using silicon-on-insulator material Download PDF

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Publication number
WO2004017371A3
WO2004017371A3 PCT/US2003/025435 US0325435W WO2004017371A3 WO 2004017371 A3 WO2004017371 A3 WO 2004017371A3 US 0325435 W US0325435 W US 0325435W WO 2004017371 A3 WO2004017371 A3 WO 2004017371A3
Authority
WO
WIPO (PCT)
Prior art keywords
soi wafer
layer
silicon
microfabricating
structures
Prior art date
Application number
PCT/US2003/025435
Other languages
French (fr)
Other versions
WO2004017371A2 (en
WO2004017371A9 (en
Inventor
William D Sawyer
Jeffrey T Borenstein
Original Assignee
Draper Lab Charles S
William D Sawyer
Jeffrey T Borenstein
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Draper Lab Charles S, William D Sawyer, Jeffrey T Borenstein filed Critical Draper Lab Charles S
Priority to AU2003272215A priority Critical patent/AU2003272215B2/en
Priority to EP03754388A priority patent/EP1576650A4/en
Publication of WO2004017371A2 publication Critical patent/WO2004017371A2/en
Publication of WO2004017371A9 publication Critical patent/WO2004017371A9/en
Publication of WO2004017371A3 publication Critical patent/WO2004017371A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00579—Avoid charge built-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components

Abstract

The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.
PCT/US2003/025435 2002-08-15 2003-08-15 Method for microfabricating structures using silicon-on-insulator material WO2004017371A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003272215A AU2003272215B2 (en) 2002-08-15 2003-08-15 Method for microfabricating structures using silicon-on-insulator material
EP03754388A EP1576650A4 (en) 2002-08-15 2003-08-15 Method for microfabricating structures using silicon-on-insulator material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40379602P 2002-08-15 2002-08-15
US60/403,796 2002-08-15

Publications (3)

Publication Number Publication Date
WO2004017371A2 WO2004017371A2 (en) 2004-02-26
WO2004017371A9 WO2004017371A9 (en) 2004-07-08
WO2004017371A3 true WO2004017371A3 (en) 2005-08-18

Family

ID=31888282

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/025435 WO2004017371A2 (en) 2002-08-15 2003-08-15 Method for microfabricating structures using silicon-on-insulator material

Country Status (3)

Country Link
EP (1) EP1576650A4 (en)
AU (2) AU2003272215B2 (en)
WO (1) WO2004017371A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7381630B2 (en) 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
US7253083B2 (en) 2005-06-17 2007-08-07 Northrop Grumman Corporation Method of thinning a semiconductor structure
US8735199B2 (en) * 2012-08-22 2014-05-27 Honeywell International Inc. Methods for fabricating MEMS structures by etching sacrificial features embedded in glass
DE102018200371A1 (en) 2018-01-11 2019-07-11 Robert Bosch Gmbh Interposersubstrat, MEMS device and corresponding manufacturing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760443A (en) * 1993-10-18 1998-06-02 Regents Of The University Of California Silicon on insulator with active buried regions
US6077721A (en) * 1995-06-29 2000-06-20 Nippondenso Co., Ltd. Method of producing an anodic bonded semiconductor sensor element
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US6291875B1 (en) * 1998-06-24 2001-09-18 Analog Devices Imi, Inc. Microfabricated structures with electrical isolation and interconnections
US6433401B1 (en) * 1999-04-06 2002-08-13 Analog Devices Imi, Inc. Microfabricated structures with trench-isolation using bonded-substrates and cavities
US6431714B1 (en) * 2000-10-10 2002-08-13 Nippon Telegraph And Telephone Corporation Micro-mirror apparatus and production method therefor
US6458615B1 (en) * 1999-09-30 2002-10-01 Carnegie Mellon University Method of fabricating micromachined structures and devices formed therefrom

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6105427A (en) * 1998-07-31 2000-08-22 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer
US6002507A (en) * 1998-12-01 1999-12-14 Xerox Corpoation Method and apparatus for an integrated laser beam scanner
CA2433738C (en) * 2001-01-02 2012-07-24 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760443A (en) * 1993-10-18 1998-06-02 Regents Of The University Of California Silicon on insulator with active buried regions
US6077721A (en) * 1995-06-29 2000-06-20 Nippondenso Co., Ltd. Method of producing an anodic bonded semiconductor sensor element
US6291875B1 (en) * 1998-06-24 2001-09-18 Analog Devices Imi, Inc. Microfabricated structures with electrical isolation and interconnections
US6433401B1 (en) * 1999-04-06 2002-08-13 Analog Devices Imi, Inc. Microfabricated structures with trench-isolation using bonded-substrates and cavities
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US6458615B1 (en) * 1999-09-30 2002-10-01 Carnegie Mellon University Method of fabricating micromachined structures and devices formed therefrom
US6431714B1 (en) * 2000-10-10 2002-08-13 Nippon Telegraph And Telephone Corporation Micro-mirror apparatus and production method therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1576650A4 *

Also Published As

Publication number Publication date
AU2003272215B2 (en) 2009-09-10
EP1576650A2 (en) 2005-09-21
WO2004017371A2 (en) 2004-02-26
AU2003272215A1 (en) 2004-03-03
EP1576650A3 (en) 2005-10-05
AU2009248425A1 (en) 2010-01-07
AU2009248425B2 (en) 2012-12-20
EP1576650A4 (en) 2011-06-15
WO2004017371A9 (en) 2004-07-08

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