MX164788B - Sistema de fijacion de matriz de semiconductores - Google Patents
Sistema de fijacion de matriz de semiconductoresInfo
- Publication number
- MX164788B MX164788B MX1672A MX167286A MX164788B MX 164788 B MX164788 B MX 164788B MX 1672 A MX1672 A MX 1672A MX 167286 A MX167286 A MX 167286A MX 164788 B MX164788 B MX 164788B
- Authority
- MX
- Mexico
- Prior art keywords
- substrate
- die
- fixing system
- semiconductor die
- semiconductor matrix
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000011159 matrix material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 230000035882 stress Effects 0.000 abstract 2
- 238000005382 thermal cycling Methods 0.000 abstract 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Classifications
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12833—Alternative to or next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12868—Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71186885A | 1985-03-14 | 1985-03-14 | |
US74078985A | 1985-06-03 | 1985-06-03 | |
US06/826,808 US4929516A (en) | 1985-03-14 | 1986-02-10 | Semiconductor die attach system |
Publications (1)
Publication Number | Publication Date |
---|---|
MX164788B true MX164788B (es) | 1992-09-24 |
Family
ID=27418893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX1672A MX164788B (es) | 1985-03-14 | 1986-02-26 | Sistema de fijacion de matriz de semiconductores |
Country Status (6)
Country | Link |
---|---|
US (1) | US4929516A (es) |
EP (1) | EP0194475A3 (es) |
KR (1) | KR860007734A (es) |
CN (1) | CN86101652A (es) |
CA (1) | CA1249669A (es) |
MX (1) | MX164788B (es) |
Families Citing this family (39)
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US4978052A (en) * | 1986-11-07 | 1990-12-18 | Olin Corporation | Semiconductor die attach system |
US4872047A (en) * | 1986-11-07 | 1989-10-03 | Olin Corporation | Semiconductor die attach system |
JPH0349834A (ja) * | 1989-07-14 | 1991-03-04 | Sumitomo Electric Ind Ltd | 金を接合材とする工具及びその製造方法 |
GB8920101D0 (en) * | 1989-09-06 | 1989-10-18 | Marconi Electronic Devices | Methods of joining components |
JP2777464B2 (ja) * | 1990-07-18 | 1998-07-16 | 株式会社日立製作所 | 電子装置と、これを用いたエンジンの点火装置 |
US5292559A (en) * | 1992-01-10 | 1994-03-08 | Amp Incorporated | Laser transfer process |
US5234153A (en) * | 1992-08-28 | 1993-08-10 | At&T Bell Laboratories | Permanent metallic bonding method |
US5369403A (en) * | 1992-09-01 | 1994-11-29 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Dual quantization oversampling digital-to-analog converter |
US5395679A (en) * | 1993-03-29 | 1995-03-07 | Delco Electronics Corp. | Ultra-thick thick films for thermal management and current carrying capabilities in hybrid circuits |
EP0622837B1 (en) * | 1993-04-27 | 2000-10-11 | Nec Corporation | A method of manufacturing an optical semiconductor device |
DE4315272A1 (de) * | 1993-05-07 | 1994-11-10 | Siemens Ag | Leistungshalbleiterbauelement mit Pufferschicht |
JPH0864724A (ja) * | 1994-07-25 | 1996-03-08 | General Electric Co <Ge> | 順応性金属のチップ‐基板結合層を有する電子装置 |
US5559817A (en) * | 1994-11-23 | 1996-09-24 | Lucent Technologies Inc. | Complaint layer metallization |
JPH09275182A (ja) * | 1996-04-02 | 1997-10-21 | Seiichi Serizawa | 半導体装置用リ−ドフレ−ム |
US6179943B1 (en) * | 1997-07-30 | 2001-01-30 | The Boeing Company | Method for forming a composite acoustic panel |
US6642078B2 (en) * | 2000-08-28 | 2003-11-04 | Transpo Electronics, Inc. | Method for manufacturing diode subassemblies used in rectifier assemblies of engine driven generators |
EP1320889A1 (de) * | 2000-09-29 | 2003-06-25 | Infineon Technologies AG | Verbindungseinrichtung |
US6586279B1 (en) * | 2000-11-17 | 2003-07-01 | Sun Microsystems, Inc. | Method of integrating a heat spreader and a semiconductor, and package formed thereby |
DE10111185A1 (de) * | 2001-03-08 | 2002-06-13 | Siemens Ag | Keramik-Metall-Substrat |
DE10221857A1 (de) * | 2002-05-16 | 2003-11-27 | Osram Opto Semiconductors Gmbh | Verfahren zum Befestigen eines Halbleiterchips in einem Kunststoffgehäusekörper, optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6870243B2 (en) * | 2002-11-27 | 2005-03-22 | Freescale Semiconductor, Inc. | Thin GaAs die with copper back-metal structure |
US7164585B2 (en) * | 2003-03-31 | 2007-01-16 | Intel Corporation | Thermal interface apparatus, systems, and methods |
DE102004001956B4 (de) * | 2004-01-13 | 2007-02-01 | Infineon Technologies Ag | Umverdrahtungssubstratstreifen mit mehreren Halbleiterbauteilpositionen |
JP3994980B2 (ja) * | 2004-03-29 | 2007-10-24 | 株式会社日立製作所 | 素子搭載用基板及びその製造方法並びに半導体素子実装方法 |
JP4343117B2 (ja) * | 2005-01-07 | 2009-10-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
EP1748480B1 (en) * | 2005-07-28 | 2009-06-24 | Infineon Technologies AG | Connection structure for attaching a semiconductor chip to a metal substrate, semiconductor chip and electronic component including the connection structure and methods for producing the connection structure |
DE102005051811A1 (de) * | 2005-10-27 | 2007-05-03 | Infineon Technologies Ag | Halbleiterbauteil mit Halbleiterchip in Flachleiterrahmentechnik und Verfahren zur Herstellung desselben |
US8283756B2 (en) * | 2007-08-20 | 2012-10-09 | Infineon Technologies Ag | Electronic component with buffer layer |
CN102947961B (zh) | 2010-06-18 | 2016-06-01 | 英派尔科技开发有限公司 | 电热效应材料和热二极管 |
US9157669B2 (en) | 2011-04-20 | 2015-10-13 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer device |
CN103733331B (zh) * | 2011-07-28 | 2017-03-22 | 电化株式会社 | 半导体元件用散热器件 |
US9671140B2 (en) | 2011-09-21 | 2017-06-06 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer |
CN103814259B (zh) * | 2011-09-21 | 2015-12-16 | 英派尔科技开发有限公司 | 电热效应热传递装置尺寸应力控制 |
US9310109B2 (en) | 2011-09-21 | 2016-04-12 | Empire Technology Development Llc | Electrocaloric effect heat transfer device dimensional stress control |
US9500392B2 (en) | 2012-07-17 | 2016-11-22 | Empire Technology Development Llc | Multistage thermal flow device and thermal energy transfer |
US9318192B2 (en) | 2012-09-18 | 2016-04-19 | Empire Technology Development Llc | Phase change memory thermal management with electrocaloric effect materials |
KR102311677B1 (ko) * | 2014-08-13 | 2021-10-12 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
CN106169448A (zh) * | 2016-07-26 | 2016-11-30 | 昆山华太电子技术有限公司 | 一种高导热的功率器件封装 |
CN109727924B (zh) * | 2018-12-27 | 2020-07-17 | 江苏省宜兴电子器件总厂有限公司 | 一种带AlN和Si过渡片陶瓷外壳封装结构 |
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CA700474A (en) * | 1964-12-22 | Siemens-Schuckertwerke Aktiengesellschaft | Method of producing electrically asymmetrical semiconductor devices, and products of such methods | |
CA676283A (en) * | 1963-12-17 | Siemens Alfred | Electric semiconductor device | |
CA755785A (en) * | 1967-03-28 | L. Davies Robert | Semiconductor device | |
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CA667024A (en) * | 1963-07-16 | Siemens-Schuckertwerke Aktiengesellschaft | Semiconductor device | |
CA707458A (en) * | 1965-04-06 | The Nippert Electric Products Company | Mounts for semiconductors and method of making same | |
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US2922092A (en) * | 1957-05-09 | 1960-01-19 | Westinghouse Electric Corp | Base contact members for semiconductor devices |
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US3454374A (en) * | 1966-05-13 | 1969-07-08 | Youngwood Electronic Metals In | Method of forming presoldering components and composite presoldering components made thereby |
US3503721A (en) * | 1967-02-16 | 1970-03-31 | Nytronics Inc | Electronic components joined by tinsilver eutectic solder |
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US3620692A (en) * | 1970-04-01 | 1971-11-16 | Rca Corp | Mounting structure for high-power semiconductor devices |
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JPS5422163A (en) * | 1977-07-21 | 1979-02-19 | Toshiba Corp | Semiconductor device |
JPS598358Y2 (ja) * | 1978-02-08 | 1984-03-15 | 京セラ株式会社 | 半導体素子パツケ−ジ |
JPS5850421B2 (ja) * | 1978-07-19 | 1983-11-10 | 株式会社東芝 | 薄膜回路 |
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JPS586143A (ja) * | 1981-07-02 | 1983-01-13 | Matsushita Electronics Corp | 半導体装置 |
JPS58501372A (ja) * | 1981-09-01 | 1983-08-18 | モトロ−ラ・インコ−ポレ−テツド | 半導体デバイス及び半導体ダイをセラミックベースに接着させる方法 |
US4592794A (en) * | 1981-09-01 | 1986-06-03 | Motorola, Inc. | Glass bonding method |
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JPS58151036A (ja) * | 1982-03-03 | 1983-09-08 | Hitachi Ltd | 半導体装置 |
US4656499A (en) * | 1982-08-05 | 1987-04-07 | Olin Corporation | Hermetically sealed semiconductor casing |
US4487638A (en) * | 1982-11-24 | 1984-12-11 | Burroughs Corporation | Semiconductor die-attach technique and composition therefor |
JPS59107527A (ja) * | 1982-12-13 | 1984-06-21 | Hitachi Ltd | 半導体装置 |
JPS59151437A (ja) * | 1983-02-18 | 1984-08-29 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS6041234A (ja) * | 1983-08-17 | 1985-03-04 | Hitachi Ltd | 半導体装置 |
JPS60235430A (ja) * | 1984-05-09 | 1985-11-22 | Hitachi Ltd | 半導体装置 |
US4610934A (en) * | 1985-01-17 | 1986-09-09 | Kennecott Corporation | Silicon carbide-to-metal joint and method of making same |
-
1986
- 1986-02-10 US US06/826,808 patent/US4929516A/en not_active Expired - Fee Related
- 1986-02-18 EP EP86102059A patent/EP0194475A3/en not_active Withdrawn
- 1986-02-19 CA CA000502175A patent/CA1249669A/en not_active Expired
- 1986-02-26 MX MX1672A patent/MX164788B/es unknown
- 1986-03-11 KR KR1019860001713A patent/KR860007734A/ko not_active Application Discontinuation
- 1986-03-14 CN CN86101652A patent/CN86101652A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1249669A (en) | 1989-01-31 |
KR860007734A (ko) | 1986-10-17 |
EP0194475A2 (en) | 1986-09-17 |
US4929516A (en) | 1990-05-29 |
EP0194475A3 (en) | 1988-04-20 |
CN86101652A (zh) | 1986-11-12 |
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