KR980009529A - 단결정 제조방법 및 그 장치 - Google Patents
단결정 제조방법 및 그 장치 Download PDFInfo
- Publication number
- KR980009529A KR980009529A KR1019970032332A KR19970032332A KR980009529A KR 980009529 A KR980009529 A KR 980009529A KR 1019970032332 A KR1019970032332 A KR 1019970032332A KR 19970032332 A KR19970032332 A KR 19970032332A KR 980009529 A KR980009529 A KR 980009529A
- Authority
- KR
- South Korea
- Prior art keywords
- inner chamber
- inert gas
- single crystal
- chamber
- gas stream
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
- 초크랄스키방법에 의해 용융몰물에서 실리콘 단결정을 인발시켜 불활성가스 플러싱(flushing)인발챔버내에서 실리콘 단결정을 제조하는 방법에 있어서, (a)그 인발챔버에서 제1내측챔버(first inner chamber)와 제2내측챔버(second inner chamber)를 구성하며 각각 측면, 상부면 및 저부면의 경계에 의해 형성하고, (b)제1불활성가스스트림(first inner gas stream)을 제1내측챔버의 상부면 경계를 통하여, 그 단결정 주위에 설정시킨 열실드(heat shield)와 용융물을 포함하는 도가니를 구성하는 제1내측챔버로 통과시키며, (c)제2불활성가스스트림(second inner gas stream)을 제2내측챔버의 저부면 경계를 통하여 도가니를 가열시키는 가열장치를 포함하는 제2내측챔버로 통과시켜(단, 제1불활성가스스트림과 제2불활성가스스트림이 그 내측챔버를 떠난후 조기에 혼합할 수 있음)구성함을 특징으로 하는 방법.
- 제1항에 있어서, 제3불활성가스스트림은 제1내측챔버의 저부면 경계를 통하여 제1내측챔버로 통과시킴을 특징으로 하는 방법.
- 제2항에 있어서, 제1불활성가스스트림과 제3불활성가스스트림을 공급하여 그 단결정에 산소의 결합을 조정하도록 함을 특징으로 하는 방법.
- 초크랄스키방법에 의해 실리콘 단결정을 제조하며, 용융물에서 그 단결정을 인발하는 장치(device)를 포함하는 불활성가스 플러싱 인발챔버를 구성하는 장치에 있어서, (a)용융물을 수용하는 도가니와, (b)그 도가니 주위에 설정하여 도가니를 가열하는 가열장치와, (c)그 가열장치 주위에 설정한 절연부재와, (d)그 단결정주위 용융물 위에 설정한 열실드(heat shield)를 구비하며, (e)그 도가니와 열실드를 포함하는 제1내측챔버와, 그 가열장치를 포함하는 제2내측챔버(second inner chamber)를 구성하여 그 내측챔버는 측면, 상부면 및 저부면 경계에 의해 형성하고, (f) 불활성가스를, 제1내측챔버의 상부경계를 통하여 제1내측챔버로 공급하는 제1장치와, 불활성가스를 제2내측챔버의 저부면 경계를 통하여 제2내측챔버로 공급하는 제2장치를 구성함을 특징으로 하는 장치.
- 제4항에 있어서, 불활성가스를 제1내측챔버의 저부면 경계를 통하여 제1내측챔버로 공급하는 제3장치를 구비함을 특징으로 하는 장치.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19628851A DE19628851A1 (de) | 1996-07-17 | 1996-07-17 | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
DE19628851.7 | 1996-07-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR980009529A true KR980009529A (ko) | 1998-04-30 |
KR100284572B1 KR100284572B1 (ko) | 2001-03-15 |
Family
ID=7800096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970032332A KR100284572B1 (ko) | 1996-07-17 | 1997-07-11 | 단결정 제조방법 및 그 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5746824A (ko) |
EP (1) | EP0819783B1 (ko) |
JP (1) | JP3000141B2 (ko) |
KR (1) | KR100284572B1 (ko) |
DE (2) | DE19628851A1 (ko) |
MY (1) | MY133687A (ko) |
TW (1) | TW476816B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030055900A (ko) * | 2001-12-27 | 2003-07-04 | 주식회사 실트론 | 단결정 잉곳의 제조장치 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989341A (en) * | 1996-02-08 | 1999-11-23 | Sumitomo Sitix Corporation | Single crystal producing apparatus and a single crystal producing method using same |
US6039801A (en) * | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
US6254673B1 (en) * | 1999-12-07 | 2001-07-03 | Seh America, Inc. | Auxillary vacuum apparatus and method for crystal growth |
US6482263B1 (en) * | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
TW200928018A (en) * | 2007-12-21 | 2009-07-01 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
CN101481825B (zh) * | 2008-01-08 | 2010-11-17 | 绿能科技股份有限公司 | 具有对流式散热构造的长晶炉 |
CN101509148B (zh) * | 2008-02-15 | 2011-05-25 | 绿能科技股份有限公司 | 具有泄浆导流结构的长晶炉 |
CN101519801B (zh) * | 2008-02-26 | 2011-10-12 | 绿能科技股份有限公司 | 长晶炉体结构 |
KR101111681B1 (ko) * | 2010-10-05 | 2012-02-14 | (주)기술과가치 | 단결정 실리콘 잉곳 제조장치 |
JP2013053017A (ja) * | 2011-09-01 | 2013-03-21 | Shin Etsu Handotai Co Ltd | 単結晶育成装置 |
TWI461359B (zh) * | 2011-09-23 | 2014-11-21 | Masahiro Hoshino | Low energy consumption and high efficiency metal silicon purification device |
CN102758258B (zh) * | 2012-06-20 | 2016-01-13 | 张永芳 | 单晶炉用伸展式热屏蔽器 |
CN105177701A (zh) * | 2015-10-14 | 2015-12-23 | 江苏华盛天龙光电设备股份有限公司 | 一种低能耗单晶炉 |
JP6908620B2 (ja) * | 2016-03-29 | 2021-07-28 | コーナー・スター・リミテッドCorner Star Limited | 結晶成長装置および関連する方法 |
CN107779946A (zh) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | 热屏组件及单晶提拉炉热场结构 |
JP7259242B2 (ja) * | 2018-09-27 | 2023-04-18 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶の製造方法 |
CN110592661A (zh) * | 2019-09-11 | 2019-12-20 | 上海新昇半导体科技有限公司 | 一种晶体生长装置 |
CN113755944A (zh) * | 2020-06-05 | 2021-12-07 | 西安奕斯伟材料科技有限公司 | 一种单晶炉热场结构、单晶炉及晶棒 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61158890A (ja) * | 1984-12-28 | 1986-07-18 | Fujitsu Ltd | 結晶成長装置 |
DE4204777A1 (de) * | 1991-02-20 | 1992-10-08 | Sumitomo Metal Ind | Vorrichtung und verfahren zum zuechten von einkristallen |
DE69301371T2 (de) * | 1992-03-31 | 1996-09-05 | Shinetsu Handotai Kk | Vorrichtung zum Ziehen eines Silizium-Einkristalls |
JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
DE4442829A1 (de) * | 1994-12-01 | 1996-06-05 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zur Herstellung eines Einkristalls |
-
1996
- 1996-07-17 DE DE19628851A patent/DE19628851A1/de not_active Withdrawn
-
1997
- 1997-06-10 US US08/872,566 patent/US5746824A/en not_active Expired - Lifetime
- 1997-07-04 MY MYPI97003034A patent/MY133687A/en unknown
- 1997-07-10 DE DE59702373T patent/DE59702373D1/de not_active Expired - Lifetime
- 1997-07-10 EP EP97111715A patent/EP0819783B1/de not_active Expired - Lifetime
- 1997-07-11 KR KR1019970032332A patent/KR100284572B1/ko not_active IP Right Cessation
- 1997-07-14 JP JP9188460A patent/JP3000141B2/ja not_active Expired - Lifetime
- 1997-07-16 TW TW086110110A patent/TW476816B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030055900A (ko) * | 2001-12-27 | 2003-07-04 | 주식회사 실트론 | 단결정 잉곳의 제조장치 |
Also Published As
Publication number | Publication date |
---|---|
JPH1081596A (ja) | 1998-03-31 |
KR100284572B1 (ko) | 2001-03-15 |
DE19628851A1 (de) | 1998-01-22 |
MY133687A (en) | 2007-11-30 |
EP0819783A1 (de) | 1998-01-21 |
DE59702373D1 (de) | 2000-10-26 |
EP0819783B1 (de) | 2000-09-20 |
US5746824A (en) | 1998-05-05 |
JP3000141B2 (ja) | 2000-01-17 |
TW476816B (en) | 2002-02-21 |
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