KR970067662A - 반도체기판의 세정액 및 이를 사용하는 세정방법 - Google Patents
반도체기판의 세정액 및 이를 사용하는 세정방법 Download PDFInfo
- Publication number
- KR970067662A KR970067662A KR1019960005954A KR19960005954A KR970067662A KR 970067662 A KR970067662 A KR 970067662A KR 1019960005954 A KR1019960005954 A KR 1019960005954A KR 19960005954 A KR19960005954 A KR 19960005954A KR 970067662 A KR970067662 A KR 970067662A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- cleaning
- cleaning liquid
- solution
- deionized water
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract 25
- 239000007788 liquid Substances 0.000 title claims abstract 20
- 238000000034 method Methods 0.000 title claims abstract 8
- 239000000758 substrate Substances 0.000 title claims abstract 6
- 239000004065 semiconductor Substances 0.000 title claims abstract 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 12
- 239000008367 deionised water Substances 0.000 claims abstract 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract 5
- 150000002978 peroxides Chemical class 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
반도체기판의 세정액 및 이를 사용하는 세정방법이 개시되어 있다.
본 발명품은 불산 용액, 과산화수소 용액, 이소프로필 알콜, 및 탈이온수가 혼합된 세정액을 제공하고, 상기 세정액이 담긴 제1 액조에 웨이퍼를 담구어 세정하는 단계와, 상기 세정된 웨이퍼를 탈이온수가 담긴 제2 액조에 담구어 상기 세정된 웨이퍼 표면에 잔존하는 세정액을 제거하는 단계와, 상기 세정액이 제거된 웨이퍼를 탈이온수가 담긴 제3 액조에 담구어 상기 세정액이 제거된 웨이퍼 표면에 잔존하는 이물질을 제거하는 단계 및 상기 이물질이 제거된 웨이퍼를 회전시키어 그 표면에 잔존하는 탈이온수를 제거하는 단계를 포함하는 것을 특징으로 하는 반도체기판의 세정방법을 제공한다. 본 발명에 의하며, 웨이퍼 표면에 흡착된 유기 오염물질 및 무기 오염물질을 4단계의 세정공정으로 모두 제거시킬 수 있으며, 실리콘으로 이루어진 물질인 웨이퍼, 다결정 실리콘막, 또는 비정질 실리콘막이 식각되는 현상을 방지할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (6)
- 반도체기판의 표면을 세정하는 용액에 있어서, 불산(HF)용액, 과산화수조(H2O2)용액, 이소프로필 알콜(IPA), 및 탈이온수가 소정의 부피비율로 혼합된 것을 특징으로 하는 반도체기판의 세정액.
- 제1항에 있어서, 상기 소정의 부피비율은 상기 불산 용액의 부피가 1일 때 상기 과산화수조 용액, 상기이소프로필 알콘, 및 상기 탈이온수의 부피가 각각 10, 50 및 50인 것을 특징으로 하는 반도체기판의 세정액.
- 제1항에 있어서, 상기 불산 용액, 상기 과산화수소 용액 및 상기 이소프로필 알콜의 순도는 각각 40%, 31%, 및 100%인 것을 특징으로 하는 반도체기판의 세정액.
- 반도체기판의 세정방법에 있어서, 불산용액, 고산화수소 용액, 이소프로필 알콜 및 탈 이온수가 혼합된 세정액이 담긴 제1 액조에 웨이퍼를 담구어 세정하는 단계; 상기 세정된 웨이퍼를 탈이온수가 담긴 제2 액조에 담구어 상기 세정된 웨이퍼 표면에 잔존하는 세정액을 제거하는 단계; 상기 세정액이 제거된 웨이퍼를 탈이온수가 담긴 제3 액조에 담구어 상기 세정액이 제거된 웨이퍼 표면에 잔존하는 이물질을 제거하는 단계; 및 상기 이물질이 제거된 웨이퍼를 회전시키어 그 표면에 잔존하는 탈이온수를 제거하는 단계를 포함하는 것을 특징으로 하는 반도체기판의 세정방법.
- 제4항에 있어서, 상기 불산 용액, 상기 과산화수소 용액, 및 상기 이소프로필 알콜의 순도는 각각 49%, 31%, 및 100%인것을 특징으로 하는 반도체기판의 세정방법.
- 제4항에 있어서, 상기 세정액은 상기 불산용액, 상기 과산화수소 용액, 상기 이소프로필 알콜 및 상기 탈이온수가 1:10:50:50의 부피비율로 혼합된 용액인 것을 특징으로 반도체기판의 세정방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960005954A KR100207469B1 (ko) | 1996-03-07 | 1996-03-07 | 반도체기판의 세정액 및 이를 사용하는 세정방법 |
JP02779297A JP3679216B2 (ja) | 1996-03-07 | 1997-02-12 | 半導体基板の洗浄液及びこれを使用する洗浄方法 |
US08/805,210 US5846921A (en) | 1996-03-07 | 1997-02-27 | Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960005954A KR100207469B1 (ko) | 1996-03-07 | 1996-03-07 | 반도체기판의 세정액 및 이를 사용하는 세정방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970067662A true KR970067662A (ko) | 1997-10-13 |
KR100207469B1 KR100207469B1 (ko) | 1999-07-15 |
Family
ID=19452571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960005954A KR100207469B1 (ko) | 1996-03-07 | 1996-03-07 | 반도체기판의 세정액 및 이를 사용하는 세정방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5846921A (ko) |
JP (1) | JP3679216B2 (ko) |
KR (1) | KR100207469B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100474856B1 (ko) * | 2001-12-29 | 2005-03-08 | 매그나칩 반도체 유한회사 | 반도체 소자의 세정 방법 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US6592676B1 (en) * | 1999-01-08 | 2003-07-15 | Interuniversitair Micro-Elektronica Centrum | Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate |
US6337235B1 (en) * | 1999-03-26 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
DE19960573C2 (de) * | 1999-12-15 | 2002-10-10 | Promos Technologies Inc | Verfahren zum Entfernen von festen Rückständen auf Oberflächen von Halbleiterscheiben |
US6881622B2 (en) * | 2002-05-30 | 2005-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structure |
US20030224511A1 (en) * | 2002-05-31 | 2003-12-04 | Isis Pharmaceuticals Inc. | Antisense modulation of cathepsin Z expression |
US7176041B2 (en) * | 2003-07-01 | 2007-02-13 | Samsung Electronics Co., Ltd. | PAA-based etchant, methods of using same, and resultant structures |
KR100634401B1 (ko) | 2004-08-03 | 2006-10-16 | 삼성전자주식회사 | 반도체 제조공정의 기판 처리 방법 |
DE102006031105A1 (de) * | 2006-07-05 | 2008-01-10 | Wacker Chemie Ag | Verfahren zur Reinigung von Polysilicium-Bruch |
DE102007040851A1 (de) * | 2007-08-29 | 2009-03-05 | Wacker Chemie Ag | Verfahren zum Reinigen von polykristallinem Silicium |
JP5405031B2 (ja) * | 2008-03-06 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法 |
US8298927B2 (en) * | 2010-05-19 | 2012-10-30 | Institute of Microelectronics, Chinese Academy of Sciences | Method of adjusting metal gate work function of NMOS device |
CN102698983A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 一种太阳能级硅片的清洗方法 |
CN110993485B (zh) * | 2019-11-27 | 2022-06-10 | 江苏富乐华半导体科技股份有限公司 | 一种氮化硅陶瓷覆铜基板的表面钝化方法 |
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-
1996
- 1996-03-07 KR KR1019960005954A patent/KR100207469B1/ko not_active IP Right Cessation
-
1997
- 1997-02-12 JP JP02779297A patent/JP3679216B2/ja not_active Expired - Fee Related
- 1997-02-27 US US08/805,210 patent/US5846921A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100474856B1 (ko) * | 2001-12-29 | 2005-03-08 | 매그나칩 반도체 유한회사 | 반도체 소자의 세정 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH09246221A (ja) | 1997-09-19 |
KR100207469B1 (ko) | 1999-07-15 |
JP3679216B2 (ja) | 2005-08-03 |
US5846921A (en) | 1998-12-08 |
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