KR970065766A - 유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터 - Google Patents
유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터 Download PDFInfo
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- KR970065766A KR970065766A KR1019970009218A KR19970009218A KR970065766A KR 970065766 A KR970065766 A KR 970065766A KR 1019970009218 A KR1019970009218 A KR 1019970009218A KR 19970009218 A KR19970009218 A KR 19970009218A KR 970065766 A KR970065766 A KR 970065766A
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- thin film
- silicon thin
- amorphous silicon
- inductively coupled
- coupled plasma
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- 239000010409 thin film Substances 0.000 title claims abstract 35
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract 21
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract 9
- 238000000034 method Methods 0.000 title claims 3
- 230000001939 inductive effect Effects 0.000 title 1
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract 9
- 239000012495 reaction gas Substances 0.000 claims abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract 3
- 239000010703 silicon Substances 0.000 claims abstract 3
- 206010034960 Photophobia Diseases 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 2
- 208000013469 light sensitivity Diseases 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims abstract 2
- 239000001301 oxygen Substances 0.000 claims abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 239000010408 film Substances 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
본 발명은 광감도, 전기전도도, 활성화에너지, 광학적 밴드 갭과 같은 박막의 특성이 우수하고 균일한 비정질 실리콘박막 등을 제조할 수 있는 유도결합형 플라즈마 CVD 방법을 제공하는 것을 목적으로 한다. 본 발명의 유도결합형 플라즈마 CVD 방법은 적어도 일부분이 유전체창(dielectric shield)을 포함하고, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘층을 가지며, 상기 유전체창에 인접하여 놓여있는, RF전력이 인가될 수 있는 안테나를 포함하는 진공화학증착 챔버를 제공하는 단계; 상기 챔버내에 있는 스테이지 상에 기판을 위치시키는 단계; 상기 챔버를 진공화하는 단계; 상기 챔버내에 반응가스를 공급하는 단계; 상기 안테나에 RF전력을 인가하는 단계; 및, 상기 기판상에 박막을 형성하기 위하여 상기 챔버내에 증발반응가스 유도결합형 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 유도결합형 플라즈마 CVD 장치의 실시예를 나타내는 설명도.
Claims (20)
- 반응가스 유도결합형 플라즈마로부터 기판상에 선택된 박막을 증착하는 방법으로서, 적어도 일부분이 유전체창(dielectric shield)을 포함하고, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘막을 가지며, 또한 상기 유전체창에 인접하여 놓여있는 고주파인가가 가능한 안테나를 포함하는 진공화학증착챔버를 제공하는 단계; 상기 챔버내에 있는 스테이지상에 기판을 위치시키는 단계; 상기 챔버를 진공화하는 단계; 상기 챔버내로 반응 가스를 제어된 압력으로 공급하는 단계; 상기 안테나에 RF 전력을 인가하는 단계; 및 상기 기판상에 박막을 형성하기 위하여 상기 챔버내에 증착 반응가스 유도결합형 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
- 제1항에 있어서, 상기 유전체창은 석영재, 또는 Al2O3재인 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
- 제1항에 있어서, 상기 반응가스는 유전체, 금속, 반도체 조성물들로부터 선택된 박막을 증착할 수 있도록 선택된 조성인 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
- 제1항에 있어서, 상기 반응가스는 실리콘 박막을 증착할 수 있도록 선택된 조성을 갖는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
- 제1항에 있어서, 상기 반응가스는 질화 실리콘 박막을 증착할 수 있도록 선택된 조성을 갖는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
- 유도결합형 플라즈마로부터 지지 기판구조체상에 형성된 비정질실리콘 박막.
- 제6항에 있어서, 상기 비정질 실리콘 박막은 상온에서의 암전기전도도가 4.3 ×10-12S/㎝인 것을 특징으로 하는 비정질실리콘 박막.
- 제6항에 있어서, 상기 비정질실리콘 박막은, AM-1(100mV/㎠)의 조건하에서 광전기전도도가 1.4 ×10-5S/㎝인 것을 특징으로 하는 비정질실리콘 박막.
- 제6항에 있어서, 상기 비정질실리콘 박막은 광감도가 약 3 ×106인 것을 특징으로 하는 비정질실리콘 박막.
- 제6항에 있어서, 상기 비정질실리콘 박막은 광학적 밴드갭이 1.78eV인 것을 특징으로 하는 비정질실리콘 박막.
- 유도결합형 플라즈마로부터 지지기판구조체상에 형성된 미세결정질 실리콘 박막으로서, 그의 미세결정립의 크기가 200~300A 이고 그의 결정화도가 70~73%인 것을 특징으로 하는 미세결정질 실리콘 박막.
- 유도결합형 플라즈마로부터 지지 기판구조체상에 형성된 질화 실리콘막.
- 제12항에 있어서, 상기 질화 실리콘막은 항복전압이 7MV이고, 전류밀도가 1MV/㎝에서 10-10A/㎠인 것을 특징으로 하는 질화 실리콘막.
- 비정질 실리콘박막을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 비정질 실리콘 박막이 유도결합형 플라즈마로부터 형성된 것을 특징으로 하는 비정질실리콘 박막 트랜지스터.
- 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옥익 층은 유도결합형 플라즈마로부터 형성된 n+형 비정질 실리콘 박막인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
- 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옴익 층은 유도결합형 플라즈마로부터 형성된 n+형 미세결정질 실리콘 박막인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
- 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옴익 층은 유도결합형 플라즈마로부터 형성된 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
- 유도결합형 플라즈마로부터 형성된 수소화된 비정질 실리콘박막을 포함하는 비정질 박막 트랜지스터.
- 제18항에 있어서, 박막 트랜지스터의 드레인 전류가 2.0 ×10-6A에서 포화되는 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
- 제18항에 있어서, 박막 트랜지스터의 전계효과 이동도가 0.80㎠/VS이고, 문턱전압값이 약 4.6V인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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KR1019970009218A KR100469134B1 (ko) | 1996-03-18 | 1997-03-18 | 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터 |
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JP (2) | JPH1027762A (ko) |
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- 1997-03-18 JP JP9084597A patent/JPH1027762A/ja active Pending
- 1997-03-18 US US08/820,293 patent/US6093660A/en not_active Expired - Lifetime
- 1997-03-18 KR KR1019970009217A patent/KR100476039B1/ko not_active IP Right Cessation
- 1997-03-18 JP JP9084596A patent/JPH1081973A/ja active Pending
- 1997-03-18 DE DE19711268A patent/DE19711268B4/de not_active Expired - Lifetime
- 1997-03-18 US US08/819,871 patent/US5951773A/en not_active Expired - Lifetime
- 1997-03-18 KR KR1019970009218A patent/KR100469134B1/ko not_active IP Right Cessation
- 1997-03-18 DE DE19711267A patent/DE19711267A1/de not_active Ceased
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KR100731998B1 (ko) * | 2005-06-07 | 2007-06-27 | 주식회사 뉴파워 프라즈마 | 유도결합 플라즈마 소오스 |
CN102653859A (zh) * | 2012-05-10 | 2012-09-05 | 中国电子科技集团公司第四十八研究所 | 一种石墨舟自动装卸片升降传递装置 |
Also Published As
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DE19711268B4 (de) | 2004-09-16 |
DE19711268A1 (de) | 1997-10-30 |
US6093660A (en) | 2000-07-25 |
US6380612B1 (en) | 2002-04-30 |
GB2311298B (en) | 1999-09-29 |
DE19711267A1 (de) | 1997-10-30 |
KR100469134B1 (ko) | 2005-09-02 |
KR100476039B1 (ko) | 2005-07-11 |
US5951773A (en) | 1999-09-14 |
JPH1081973A (ja) | 1998-03-31 |
KR970067610A (ko) | 1997-10-13 |
GB9705608D0 (en) | 1997-05-07 |
GB2311298A (en) | 1997-09-24 |
JPH1027762A (ja) | 1998-01-27 |
GB2311299B (en) | 2000-03-29 |
GB9705612D0 (en) | 1997-05-07 |
GB2311299A (en) | 1997-09-24 |
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