KR970029372A - 대규모 자기저항 재료 및 그 형성방법 - Google Patents
대규모 자기저항 재료 및 그 형성방법 Download PDFInfo
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- KR970029372A KR970029372A KR1019960052210A KR19960052210A KR970029372A KR 970029372 A KR970029372 A KR 970029372A KR 1019960052210 A KR1019960052210 A KR 1019960052210A KR 19960052210 A KR19960052210 A KR 19960052210A KR 970029372 A KR970029372 A KR 970029372A
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- memory cell
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- 239000000463 material Substances 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- 230000005291 magnetic effect Effects 0.000 claims abstract 23
- 239000000696 magnetic material Substances 0.000 claims abstract 6
- 239000013598 vector Substances 0.000 claims abstract 5
- 125000006850 spacer group Chemical group 0.000 claims 3
- 239000012212 insulator Substances 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 1
- 230000005294 ferromagnetic effect Effects 0.000 claims 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- Y10S428/928—Magnetic property
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- Y10T428/1107—Magnetoresistive
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- Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Hall/Mr Elements (AREA)
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Abstract
다층 자기 재료(10)는 재료(10)의 길이를 따라 가리키는 자기 벡터(21,22)를 갖는다. 반대 자계는 상기 벡터가 재료의 저항에서 빠른 변화로 이전의 수직 위치로 스냅되게 한다. 상기 재료는 메모리(36)의 메모리 셀(37,38,39,41)로서 사용된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 GMR 재료의 확대 단면도,
제2도는 본 발명에 따라 제1도에 도시된 GMR 재료의 노출부분 확대도,
제5도는 본 발명에 따른 제1도에 도시된 GMR을 활용하는 메모리 일부를 확대한 평면도.
Claims (6)
- GMR 재료(10)를 형성하는 방법에 있어서, 복수의 자기 재료층(11,13,6,18)내에 있는 자기 영역 벽의 폭보다 작은 폭을 각각 가지도록 상기 복수의 자기 재료층(11,13,16,18)을 형성하는 단계를 포함하며, 각각의 자기 재료층은 인접하는 자기 재료층과 강자성적으로 결합되며, 각각의 자기 재료층의 자기 벡터는 실질적으로 GMR 재료의 길이를 따르는 것을 특징으로 하는 GMR 재료 형성방법.
- 강자성적으로 결합된 GMR 재료(10)에 있어서, 폭과 길이를 갖는 복수의 자기층(11,13,16,18)로서, 상기 폭은 천이 폭보다 크지 않으며 각각의 자기층이 인접하는 자기층과 강자성적으로 결합되며 복수의 자기층의 각 층의 모든 자기 벡터가 실질적으로 길이를 따라 정합하는 상기 복수의 자기층; 및 상기 복수의 자기층(11,13,16,18)을 분리하는 복수의 전도 스페이서(12,14,17)를 포함하는 것을 특징으로 하는 강자성적으로 결합된 GMR 재료.
- 강자성적으로 다층 결합된 GMR 재료(10)에 있어서, 제1폭, 제1두께, 및 제1길이를 갖는 제1합성 자기층(11); 제1전도 스페이서층(12); 및 제2폭, 상기 제1두께보다 더 두꺼운 제2두께, 및 제2길이를 갖는 제2합성 자기층(13)을 포합하며, 상기 제1전도 스페이서층(12)은 제1 및 제2자기층(11,13)사이에 있으며 제1 및 제2폭은 제1천이 폭보다 크지 않으며 제1 및 제2자기층(11,13)은 강자성적으로 결합되어 있으며 제1 및 제2합성 자기층(11,13)의 자기 벡터는 실질적으로 제1 및 제2길이에 평행한 것을 특징으로 하는 강자성적으로 다층 결합된 GMR 재료.
- 강자성적으로 결합된 자기 메모리(36)에 있어서, 강자성적으로 결합된 GMR 재료층(10); 강자성적으로 다층 결합된 재료층위에 겹쳐있는 절연체(43); 및 상기 절연체(43)위에 겹쳐있는 제1전도층(44);을 포함하며,상기 제1전도층[44)은 강자성적으로 다층 결합된 GMR 재료(10)층에 실질적으로 수직인 것을 특징으로 하는강자성적으로 결합된 자기 메모리.
- 강자성적으로 결합된 자기 메모리(36)를 사용하는 방법에 있어서, 제1전체 자계(49)를 제1방향에서 메모리 셀(10)의 상태를 바꾸는데 충분하지 못한 제1크기로 메모리 셀(10)에 인가하도록 포지티브 감지 전류와 제1워드 전류를 사용하는 단계; 상기 메모리 셀(10)의 제1출력 전압을 결정하는 단계; 제2전체 자계를 제2방향으로 상기 메모리 셀의 상태를 바꾸는데 충분하지 못한 제2크기로 메모리 셀(10)에 인가함으로써 상기 제1전류를 제2전류로 바꾸는 단계; 메모리 셀(10)의 제2전압 출력을 결정하는 단계; 및 상기 제1전압 출력을 상기 제2전압 출력과 비교하는 단계;를 포함하는 것을 특징으로 하는 강자성적으로 결합된 자기 메모리 사용 방법.
- 강자성적으로 결합된 자기 메모리(36)를 사용하는 방법에 있어서, 제1전체 자계(49)를 제l방향으로 메모리 셀의 상태를 바꾸는데 충분하지 못한 제1크기로 상기 메모리 셀(10)에 인가하도록 제1워드 전류를 사용하는 단계; 및 상기 메모리 셀(10)의 제1전압 출력을 결정하는 단계;를 포함하는 것을 특징으로 하는 강자성적으로 결합된 자기 메모리 사용 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/553,933 US5702831A (en) | 1995-11-06 | 1995-11-06 | Ferromagnetic GMR material |
US553,933 | 1995-11-06 |
Publications (2)
Publication Number | Publication Date |
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KR970029372A true KR970029372A (ko) | 1997-06-26 |
KR100397246B1 KR100397246B1 (ko) | 2003-11-20 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019960052210A KR100397246B1 (ko) | 1995-11-06 | 1996-11-06 | 강자성gmr재료및그형성방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5702831A (ko) |
EP (1) | EP0772250B1 (ko) |
JP (1) | JP3673347B2 (ko) |
KR (1) | KR100397246B1 (ko) |
DE (1) | DE69629264T2 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5949707A (en) * | 1996-09-06 | 1999-09-07 | Nonvolatile Electronics, Incorporated | Giant magnetoresistive effect memory cell |
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
US5966322A (en) * | 1996-09-06 | 1999-10-12 | Nonvolatile Electronics, Incorporated | Giant magnetoresistive effect memory cell |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US7059201B2 (en) * | 2000-12-20 | 2006-06-13 | Fidelica Microsystems, Inc. | Use of multi-layer thin films as stress sensors |
US6418046B1 (en) * | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
US6576969B2 (en) * | 2001-09-25 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Magneto-resistive device having soft reference layer |
US6545906B1 (en) | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6903396B2 (en) * | 2002-04-12 | 2005-06-07 | Micron Technology, Inc. | Control of MTJ tunnel area |
US7095646B2 (en) | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6743642B2 (en) * | 2002-11-06 | 2004-06-01 | International Business Machines Corporation | Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
US6943038B2 (en) * | 2002-12-19 | 2005-09-13 | Freescale Semiconductor, Inc. | Method for fabricating a flux concentrating system for use in a magnetoelectronics device |
US6909631B2 (en) * | 2003-10-02 | 2005-06-21 | Freescale Semiconductor, Inc. | MRAM and methods for reading the MRAM |
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US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
-
1995
- 1995-11-06 US US08/553,933 patent/US5702831A/en not_active Expired - Lifetime
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1996
- 1996-10-24 EP EP96117076A patent/EP0772250B1/en not_active Expired - Lifetime
- 1996-10-24 DE DE69629264T patent/DE69629264T2/de not_active Expired - Fee Related
- 1996-10-30 JP JP30589796A patent/JP3673347B2/ja not_active Expired - Fee Related
- 1996-11-06 KR KR1019960052210A patent/KR100397246B1/ko not_active IP Right Cessation
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1997
- 1997-09-17 US US08/932,400 patent/US6177204B1/en not_active Expired - Lifetime
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JPH09148131A (ja) | 1997-06-06 |
EP0772250A1 (en) | 1997-05-07 |
KR100397246B1 (ko) | 2003-11-20 |
EP0772250B1 (en) | 2003-07-30 |
US6177204B1 (en) | 2001-01-23 |
DE69629264D1 (de) | 2003-09-04 |
JP3673347B2 (ja) | 2005-07-20 |
US5702831A (en) | 1997-12-30 |
DE69629264T2 (de) | 2004-02-26 |
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