KR970022580A - Measurement mark for measuring superposition accuracy and optimal focus of exposure equipment - Google Patents

Measurement mark for measuring superposition accuracy and optimal focus of exposure equipment Download PDF

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Publication number
KR970022580A
KR970022580A KR1019950037191A KR19950037191A KR970022580A KR 970022580 A KR970022580 A KR 970022580A KR 1019950037191 A KR1019950037191 A KR 1019950037191A KR 19950037191 A KR19950037191 A KR 19950037191A KR 970022580 A KR970022580 A KR 970022580A
Authority
KR
South Korea
Prior art keywords
exposure equipment
measurement mark
box
optimal focus
superposition accuracy
Prior art date
Application number
KR1019950037191A
Other languages
Korean (ko)
Other versions
KR0172287B1 (en
Inventor
이철승
이희목
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950037191A priority Critical patent/KR0172287B1/en
Publication of KR970022580A publication Critical patent/KR970022580A/en
Application granted granted Critical
Publication of KR0172287B1 publication Critical patent/KR0172287B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 박스 인 박스 형태의 내부 박스 패턴(3)과 외부 박스 패턴(1); 및 상기 내부 및 외부 박스 패턴 각각의 상·하·좌·우측변 중 적어도 어느 하나의 측변을 따라 형성된 바 패턴(2,4)을 구비하는 것을 특징으로 하는 중첩 정확도와 노광장비는 최적 포커스를 측정하기 위한 측정 마크에 관한 것으로, 노광장비를 사용하기 전에 검사하여야 하는 노광장비의 최적 포커스 및 중첩 정확도를 동시에 측정하여 결정할 수 있어, 측정에 따라 경제적, 시간적 손실을 최소화하여 반도체 소자의 제조 수율을 향상시키도록 한 것이다.The present invention provides a box-in-box type inner box pattern (3) and outer box pattern (1); And bar patterns (2,4) formed along at least one of the upper, lower, left, and right sides of each of the inner and outer box patterns. It is related to the measurement mark to measure the optimum focusing and overlapping accuracy of the exposure equipment to be inspected before using the exposure equipment. It was made to be.

Description

중첩 정확도와 노광장비의 최적 포커스를 측정하기 위한 측정 마크Measurement mark for measuring superposition accuracy and optimal focus of exposure equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 일실시예에 따른 중첩 정확도와 노광장비의 최적 포커스를 측정하기 위한 측정 마크의 평면도.1 is a plan view of a measurement mark for measuring the overlapping accuracy and the optimum focus of the exposure apparatus according to an embodiment of the present invention.

Claims (2)

박스 인 박스 형태의 내부 박스 패턴과 외부 박스 패턴; 및 상기 내부 또는 외부 박스 패턴 중 적어도 어느 한 패턴의 상·하·좌·우측변 중 적어도 어느 하나의 측변을 따라 형성된 바 패턴을 구비하는 것을 특징으로 하는 중첩 정확도와 노광장비의 최적 포커스를 측정하기 위한 측정 마크.An inner box pattern and an outer box pattern in the form of a box in a box; And a bar pattern formed along at least one of the upper, lower, left, and right sides of at least one of the inner and outer box patterns. For measuring marks. 제1항에 있어서, 상기 바 패턴은 상기 내부 및 외부 박스 패턴의 상측변 및 우측변을 따라 형성되는 것을 특징으로 하는 중첩 정확도와 노광장비의 최적 포커스를 측정하기 위한 측정 마크.The measurement mark of claim 1, wherein the bar pattern is formed along upper and right sides of the inner and outer box patterns. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950037191A 1995-10-25 1995-10-25 Focusing measurement of exposure apparatus and reiteration accuracy by detecting mark KR0172287B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950037191A KR0172287B1 (en) 1995-10-25 1995-10-25 Focusing measurement of exposure apparatus and reiteration accuracy by detecting mark

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950037191A KR0172287B1 (en) 1995-10-25 1995-10-25 Focusing measurement of exposure apparatus and reiteration accuracy by detecting mark

Publications (2)

Publication Number Publication Date
KR970022580A true KR970022580A (en) 1997-05-30
KR0172287B1 KR0172287B1 (en) 1999-03-20

Family

ID=19431361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950037191A KR0172287B1 (en) 1995-10-25 1995-10-25 Focusing measurement of exposure apparatus and reiteration accuracy by detecting mark

Country Status (1)

Country Link
KR (1) KR0172287B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307529B1 (en) * 1999-04-28 2001-10-29 김영환 A pattern for measuring a focus of light exposing apparatus and method for measuring the focus of light exposing apparatus using the pattern

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100811372B1 (en) * 2005-08-04 2008-03-07 주식회사 하이닉스반도체 Overlay measuring mark

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307529B1 (en) * 1999-04-28 2001-10-29 김영환 A pattern for measuring a focus of light exposing apparatus and method for measuring the focus of light exposing apparatus using the pattern

Also Published As

Publication number Publication date
KR0172287B1 (en) 1999-03-20

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