KR950004418A - How to measure the focus and parallelism of the exposure machine - Google Patents

How to measure the focus and parallelism of the exposure machine Download PDF

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Publication number
KR950004418A
KR950004418A KR1019930012452A KR930012452A KR950004418A KR 950004418 A KR950004418 A KR 950004418A KR 1019930012452 A KR1019930012452 A KR 1019930012452A KR 930012452 A KR930012452 A KR 930012452A KR 950004418 A KR950004418 A KR 950004418A
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KR
South Korea
Prior art keywords
measuring
focus
exposure machine
parallelism
exposure
Prior art date
Application number
KR1019930012452A
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Korean (ko)
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KR960011463B1 (en
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930012452A priority Critical patent/KR960011463B1/en
Publication of KR950004418A publication Critical patent/KR950004418A/en
Application granted granted Critical
Publication of KR960011463B1 publication Critical patent/KR960011463B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 육안으로 확인 가능한 크기를 갖는 다수의 측정용 패턴(a,b,c,d,e)이 형성된 측정용 포토마스크를 제작하는 단계, 노광기를 사용하여 상기 마스크상의 측정용 패턴(a,b,c,d,e)을 측정용 웨이퍼에 전사하되 노광기의 노광시간 및 포커스 오프셋의 변화에 의한 두방향의 패턴 배열을 갖는 다수의 패턴 군(A,B,C,D,E)을 이루도록 노광 및 현상하는 단계를 포함하여 이루어지는 것을 특징으로 하는 노광기의 촛점 및 평행도 측정 방법에 관한 것으로, 노광기의 최상 촛점 및 평행도를 패턴선폭 측정없이 육안으로 쉽고 빠르게 확인 할 수 있는 효과가 있다.The present invention provides a method of manufacturing a photomask for measuring a plurality of measuring patterns (a, b, c, d, and e) having a size that can be visually observed, and using an exposure machine (a, b, c, d, and e are transferred to the measuring wafer, and form a plurality of pattern groups (A, B, C, D, E) having a pattern arrangement in two directions due to changes in exposure time and focus offset of the exposure machine. The present invention relates to a method for measuring the focus and parallelism of an exposure machine, comprising the step of exposing and developing the light.

Description

노광기의 촛점 및 평행도 측정 방법How to measure the focus and parallelism of the exposure machine

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 측정용 포토마스크의 평면도.2 is a plan view of a measuring photomask according to the present invention.

Claims (3)

육안으로 확인 가능한 크기를 갖는 다수의 측정용 패턴(a, b, c, d, e)이 형성된 측정용 포토마스크를 제작하는 단계, 노광기를 사용하여 상기 마스크상의 측정용 패턴(a, b, c, d, e)을 측정용 웨이퍼에 전사하되 노광기의 노광시간 및 포커스 오프셋의 변화에 의한 두 방향의 패턴 배열을 갖는 다수의 패턴 군(A, B, C, D, E)을 이루도록 노광 및현상하는 단계를 포함하여 이루어지는 것을 특징으로 하는 노광기의 초점 및 평행도 측정 방법.Preparing a photomask for measurement in which a plurality of measurement patterns (a, b, c, d, and e) having a visually identifiable size are formed; using the exposure machine (a, b, c) , d, e) are transferred to the measuring wafer and exposed and developed to form a plurality of pattern groups (A, B, C, D, E) having a pattern arrangement in two directions due to changes in exposure time and focus offset of the exposure machine. Method for measuring the focus and parallelism of the exposure machine comprising the step of. 제1항에 있어서, 상기 측정용 포토마스크는 중앙부위에 하나의 측정용 패턴(a)이 형성되고, 이 중앙에 형성된 측정용 패턴(a)을 중심으로 정사각형 모양이 되도록 네 개의 측정용 패턴(b, c, d, e)을 모서리 부근에 형성되되,상기 모서리 부근에 위치한 네 개의 측정용 패턴(b, c, d, e)이 노광 필드(field) 영역의 최대 부분까지 연장위치 되도록형성된 것을 특징으로 하는 노광기의 초점 및 평행도 측정 방법.According to claim 1, wherein the measuring photomask has a measurement pattern (a) is formed in the central portion, the four measurement patterns (such that the square shape around the measurement pattern (a) formed in the center ( b, c, d, and e are formed near the corners, and the four measurement patterns b, c, d, and e located near the corners are formed to extend to the maximum portion of the exposure field area. A method for measuring focus and parallelism of an exposure machine. 제2항에 있어서, 상기 측정용 웨이퍼에 형성되는 패턴 군(A, B, C, D)은 정사각형 모양의 네 모서리와 그중앙에 위치하는 것을 특징으로 하는 노광기의 초점 및 평행도 측정 방법.The method of measuring focus and parallelism of an exposure apparatus according to claim 2, wherein the pattern groups (A, B, C, D) formed on the measuring wafer are located at four corners and centers thereof in a square shape. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012452A 1993-07-02 1993-07-02 Measuring method of focus and parallel state for stepper KR960011463B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012452A KR960011463B1 (en) 1993-07-02 1993-07-02 Measuring method of focus and parallel state for stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012452A KR960011463B1 (en) 1993-07-02 1993-07-02 Measuring method of focus and parallel state for stepper

Publications (2)

Publication Number Publication Date
KR950004418A true KR950004418A (en) 1995-02-18
KR960011463B1 KR960011463B1 (en) 1996-08-22

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KR1019930012452A KR960011463B1 (en) 1993-07-02 1993-07-02 Measuring method of focus and parallel state for stepper

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KR960011463B1 (en) 1996-08-22

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