KR970008375A - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법 Download PDFInfo
- Publication number
- KR970008375A KR970008375A KR1019960029111A KR19960029111A KR970008375A KR 970008375 A KR970008375 A KR 970008375A KR 1019960029111 A KR1019960029111 A KR 1019960029111A KR 19960029111 A KR19960029111 A KR 19960029111A KR 970008375 A KR970008375 A KR 970008375A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- reaction chamber
- gas
- plasma
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 5
- 239000004065 semiconductor Substances 0.000 title claims 6
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000001312 dry etching Methods 0.000 claims abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims 3
- 239000012495 reaction gas Substances 0.000 claims 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 claims 1
- PGFXOWRDDHCDTE-UHFFFAOYSA-N hexafluoropropylene oxide Chemical compound FC(F)(F)C1(F)OC1(F)F PGFXOWRDDHCDTE-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- ing And Chemical Polishing (AREA)
Abstract
본 발명은, 플라즈마를 이용한 드라이 에칭방법에 있어서, 종래로부터 개발이 진행되고 있는 탄화 플루오르가스와 C0의혼합가스를 이용한 경우와 같은 정도의 에칭특성을 갖고, 인화나 발화 등의 위험이 없으며, 안전성의 확보가 용이한 에칭방법을 실현한다.
본 발명은, C0를 조성식에 포함하는 탄화 플루오르가스를 드라이 에칭에서의 에칭가스로서 이용하여, 예컨대 웨이퍼(21)상에 형성되고, 레지스트(23) 등의 마스크가 형성된 실리콘 산화막(22)에 소정 패턴의 개공(24)을 형성한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 이용하는 에칭장치의 일례를 나타낸 개략도.
Claims (5)
- 반응실(11)내의 전극(12)에 소정막이 형성된 반도체기판(13)을 재치하는 공정과, 상기 반응실(11)내에 C0를 조성식중에 포함하는 탄화 플루오르가스를 도입하는 공정 멎, 상기 전극(12)에 고주파전압을 인가하여 상기 반응실(11)내에 플라즈마를 생성하여 상기 소정막을 에칭처리하는 드라이 에칭공정을 갖춘 반도체장치의 제조방법.
- 제1항에 있어서, 상기 반응가스가 CF3FCOCF2(hexaf1uoropropenoxide) 또는 CF3COCF3(hexafluoroacetone)인 것을 특징으로 하는 반도체장치의 제조방법.
- 제1항에 있어서, 상기 소정막이 실리콘 산화막 또는 실리콘 질화막 또는 실리콘막인 것을 특징으로 하는 반도체장치의 제조방법.
- 에칭마스크가 형성된 소정막을 반응실(11)내에 도입시킨 반응가스의 작용에 의해 에칭하는 드라이 에칭공정을 갖춘 반도체장치의 제조방법에 있어서, 상기 반응가스에 할로겐화물과 C와 CO가 화학 결합한 탄화 플루오르가스를 이용한 것을 특징으로 하는 반도체장치의 제조방법.
- 제4항에 있어서, 상기 소정막이 상기 반응실(11)내에 설치된 전극(12)상에 재치되고, 상기 전극(12)에 전압을 인가하는 것에 의해 상기 반응실(11)내에 플라즈마가 생성되며, 상기 플라즈마에 의해 상기 탄화 플루오르가스를 구성하는 C0가 상기 탄화 플루오르가스로부터 해리되는 것을 특징으로 하는 반도체장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7183652A JPH0936091A (ja) | 1995-07-20 | 1995-07-20 | 半導体装置の製造方法 |
| JP95-183652 | 1995-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970008375A true KR970008375A (ko) | 1997-02-24 |
| KR100215601B1 KR100215601B1 (ko) | 1999-08-16 |
Family
ID=16139556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960029111A KR100215601B1 (ko) | 1995-07-20 | 1996-07-19 | 반도체장치의 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0936091A (ko) |
| KR (1) | KR100215601B1 (ko) |
| TW (1) | TW302509B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027781A (ja) * | 1996-07-10 | 1998-01-27 | Daikin Ind Ltd | エッチングガスおよびクリーニングガス |
| DE19706682C2 (de) * | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
| KR102303686B1 (ko) * | 2017-02-28 | 2021-09-17 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법 |
-
1995
- 1995-07-20 JP JP7183652A patent/JPH0936091A/ja active Pending
-
1996
- 1996-07-10 TW TW085108371A patent/TW302509B/zh not_active IP Right Cessation
- 1996-07-19 KR KR1019960029111A patent/KR100215601B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0936091A (ja) | 1997-02-07 |
| TW302509B (ko) | 1997-04-11 |
| KR100215601B1 (ko) | 1999-08-16 |
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| GRNT | Written decision to grant | ||
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| LAPS | Lapse due to unpaid annual fee |