KR960009041A - 세정제 및 반도체 웨이퍼를 세정하는 방법 - Google Patents

세정제 및 반도체 웨이퍼를 세정하는 방법 Download PDF

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Publication number
KR960009041A
KR960009041A KR1019950026371A KR19950026371A KR960009041A KR 960009041 A KR960009041 A KR 960009041A KR 1019950026371 A KR1019950026371 A KR 1019950026371A KR 19950026371 A KR19950026371 A KR 19950026371A KR 960009041 A KR960009041 A KR 960009041A
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South Korea
Prior art keywords
water
soluble
semiconductor wafer
cleaner
succinic acid
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Application number
KR1019950026371A
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English (en)
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KR0157702B1 (en
Inventor
보루네르 로랜드
호흐게상 게오로그
쉬네그 안톤
탈하머 게르트라우드
Original Assignee
루돌프 스타우디글·게르트 켈러
워커 실트로닉 게셀샤프트 휘르 할브라이테르 마테리알리엔 엠 베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE4430217A external-priority patent/DE4430217A1/de
Priority claimed from DE19515024A external-priority patent/DE19515024A1/de
Application filed by 루돌프 스타우디글·게르트 켈러, 워커 실트로닉 게셀샤프트 휘르 할브라이테르 마테리알리엔 엠 베하 filed Critical 루돌프 스타우디글·게르트 켈러
Publication of KR960009041A publication Critical patent/KR960009041A/ko
Application granted granted Critical
Publication of KR0157702B1 publication Critical patent/KR0157702B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

이 발명은 세정제와 반도체웨이퍼(semiconductor wafers)를 세정하는 방법에 대한 것이다. 그 수용성세정제는 PH 1∼5, 바람직하게는 PH 1∼3을 가지며, 적어도 하나의 계면활성제와, 석신산 및 그 유도체로 구성되는 일군의 화합물에 속하는 적어도 하나의 화합물을 포함한다. 반도체웨이퍼를 세정하기 위하여, 세정제 박층필름은 그 반도체웨이퍼의 측면상에서 바람직하게는 기계적공구를 사용하여 형성한다.

Description

세정제 및 반도체 웨이퍼를 세정하는방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 적어도 하나의 계면활성제와, 석신산 및 그 유도체로 구성되는 일군(a group)의 화합물에 속하는 적어도 하나의 화합물을 포함하며, PH 1∼5를 가짐을 특징으로하는 반도체웨이퍼를 세정하는 수용성 세정제.
  2. 제1항에 있어서, 그 세정제중 계면활성제 성분은 0.01∼1wt%를 가짐을 특징으로 하는 수용성 세정제.
  3. 제1항에 있어서, 그 수용성 세정제에는 석신산 및/또는 설포석신산을 포함함을 특징으로하는 수용성 세정제.
  4. 제1항에 있어서, 그 수용성세정제에는 추가로 염산을 포함함을 특징으로하는 수용성 세정제.
  5. 반도체웨이퍼 측면상에 적어도 하나의 계면활성제와 석신산 및 그 유로체로 구성되는 일군의 화합물에 속하는 적어도 하나의 화합물을 포함하며 PH 1∼5를 가진 수용성세정제 필름을 생성함을 특징으로하는 반도체웨이퍼를 세정하는방법.
  6. 제5항에 있어서, 그 필름은 기계적공구에 의해 형성됨을 특징으로하는 반도체웨이퍼를 세정하는방법.
  7. 제5항에 있어서, 그 수용성세정제에는 석신산 및/또는 설포석신산을 포함함을 특징으로하는 반도체웨이퍼를 세정하는방법.
  8. 제5항에 있어서, 그 수용성세정제에는 염산을 추가로 포함함을 특징으로하는 반도체데이터를 세정하는방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950026371A 1994-08-25 1995-08-24 Cleaning agent and method for cleaning semiconductor wafers KR0157702B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE94-P4430217.7 1994-08-25
DE4430217A DE4430217A1 (de) 1994-08-25 1994-08-25 Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben
DE19515024A DE19515024A1 (de) 1995-04-24 1995-04-24 Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben
DE95-P19515024.4 1995-04-24

Publications (2)

Publication Number Publication Date
KR960009041A true KR960009041A (ko) 1996-03-22
KR0157702B1 KR0157702B1 (en) 1998-12-01

Family

ID=25939522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950026371A KR0157702B1 (en) 1994-08-25 1995-08-24 Cleaning agent and method for cleaning semiconductor wafers

Country Status (8)

Country Link
US (1) US5695572A (ko)
EP (1) EP0698917B1 (ko)
JP (1) JP2709452B2 (ko)
KR (1) KR0157702B1 (ko)
CN (1) CN1057330C (ko)
DE (1) DE59506147D1 (ko)
FI (1) FI953947A (ko)
TW (1) TW330211B (ko)

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JP3693441B2 (ja) * 1996-12-27 2005-09-07 富士通株式会社 記録媒体の製造方法
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US6232231B1 (en) 1998-08-31 2001-05-15 Cypress Semiconductor Corporation Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
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JP4516176B2 (ja) 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US6230720B1 (en) 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
JP3396030B2 (ja) * 2001-04-27 2003-04-14 沖電気工業株式会社 半導体装置の製造方法
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JP4613744B2 (ja) * 2005-08-10 2011-01-19 株式会社Ｓｕｍｃｏ シリコンウェーハの洗浄方法
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CN102211880B (zh) * 2011-04-11 2013-01-02 李莉 一种玻璃清洗设备
CN103882444A (zh) * 2012-12-19 2014-06-25 安集微电子（上海）有限公司 一种清洗液及其应用
CN103013711A (zh) * 2013-01-15 2013-04-03 常州比太科技有限公司 一种去除晶体硅片金属离子污染的清洗液及其清洗工艺

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Also Published As

Publication number Publication date
TW330211B (en) 1998-04-21
FI953947A0 (fi) 1995-08-23
CN1057330C (zh) 2000-10-11
KR0157702B1 (en) 1998-12-01
US5695572A (en) 1997-12-09
FI953947A (fi) 1996-02-26
CN1124763A (zh) 1996-06-19
EP0698917B1 (de) 1999-06-09
DE59506147D1 (de) 1999-07-15
JPH08100195A (ja) 1996-04-16
JP2709452B2 (ja) 1998-02-04
EP0698917A1 (de) 1996-02-28

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