KR960008523B1 - Metal wiring method of semiconductor device - Google Patents

Metal wiring method of semiconductor device Download PDF

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KR960008523B1
KR960008523B1 KR1019920026880A KR920026880A KR960008523B1 KR 960008523 B1 KR960008523 B1 KR 960008523B1 KR 1019920026880 A KR1019920026880 A KR 1019920026880A KR 920026880 A KR920026880 A KR 920026880A KR 960008523 B1 KR960008523 B1 KR 960008523B1
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aluminum alloy
metal
layer
semiconductor device
wiring
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KR1019920026880A
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KR940016692A (en
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신철호
신찬수
김상용
안용국
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현대전자산업 주식회사
김주용
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The metal wiring method comprising the steps of depositing a metal layer for wiring on a stepped wafer surface, and flowing the metal layer by generating an inert gas plasma with RF in a chamber, thereby improving the step coverage.

Description

반도체 소자의 금속 배선 방법Metal wiring method of semiconductor device

제1도는 종래의 알루미늄 합금 배선 형성도.1 is a conventional aluminum alloy wiring formation diagram.

제2도는 본 발명에 따른 알루미늄 합금 플로우의 메카니즘을 나타내는 개념도.2 is a conceptual diagram showing the mechanism of the aluminum alloy flow according to the present invention.

제3도는 본 발명에 따라 스텝 커버리지가 개선된 알루미늄 합금 단면도.3 is a cross-sectional view of an aluminum alloy with improved step coverage in accordance with the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 하부 도전층 2 : 절연층1: lower conductive layer 2: insulating layer

3 : 배리어 금속 4 : 알루미늄 합금층3: barrier metal 4: aluminum alloy layer

본 발명은 반도체 소자의 금속 배선 공정시 RF(radio frequency)를 이용하여 알루미늄 합금을 플로우시켜 스텝 커버리지(step coverage)를 재선하는 반도체 소자의 금속 배선 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal wiring method of a semiconductor device for re-wiring step coverage by flowing an aluminum alloy using a radio frequency (RF) during a metal wiring process of a semiconductor device.

일반적으로 반도체 소자의 고집적도가 증가함에 따라 알루미늄 합금을 증착할 부분의 콘택홀 크기는 상대적으로 작아지고 있음에 따라 알루미늄 합금 증착 후의 스텝 커버리지가 공정상의 문제점으로 대두되어 왔다.In general, as the high integration of semiconductor devices increases, the contact hole size of the portion where the aluminum alloy is to be deposited is relatively small, so step coverage after aluminum alloy deposition has been a problem in the process.

종래의 알루미늄 합금 배선 방법을 제1도를 통하여 상세히 설명하면, 도면에서 1은 하부 도전층, 2는 절연층, 3은 배리어(barrier) 금속, 4는 알루미늄 합금층을 각각 나타낸다.The conventional aluminum alloy wiring method will be described in detail with reference to FIG. 1, where 1 is a lower conductive layer, 2 is an insulating layer, 3 is a barrier metal, and 4 is an aluminum alloy layer.

도면에서 도시된 바와같이 종래의 알루미늄 합금 베션을 형성하는 방법은 하부 도전층(1)상의 절연층(2)을 선택식각하여 콘택홀을 형성한 다음, 배리어 금속(3)을 증착하고 알루미늄 합금층(4)을 증착하는 방법을 사용하고 있다.As shown in the drawings, a conventional method of forming an aluminum alloy basin is to selectively etch the insulating layer 2 on the lower conductive layer 1 to form a contact hole, and then deposit the barrier metal 3 and deposit the aluminum alloy layer. (4) The method of depositing is used.

그러나 상기 종래의 알루미늄 합금 배선은 소자의 고집적화에 따른 콘택홀의 직경 감소와 절연층의 높이가 증가함에 따라 알루미늄 합금의 스텝 커버리지가 더욱 나빠지게 되고 접촉저항이 증가하게 되고 심하면 금속의 단락을 유발하여 소자의 신뢰성 및 수율을 감소시키는 문제점이 있었다.However, in the conventional aluminum alloy wiring, as the diameter of the contact hole decreases and the height of the insulating layer increases due to the high integration of the device, the step coverage of the aluminum alloy becomes worse, the contact resistance increases, and if the metal short occurs, the device shortens. There was a problem of reducing the reliability and yield.

따라서 상기 문제점을 해결하기 위하여 안출된 본 발명은 양호한 스텝 커버리지를 얻은 반도체 소자의 신뢰성을 확보할 수 있는 반도체 소자의 금속 합금 배선 방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a metal alloy wiring method of a semiconductor device capable of securing the reliability of a semiconductor device having good step coverage.

상기 목적을 달성하기 위하여 본 발명은, 반도체 소자의 금속 배선 방법에 있어서, 단차진 웨이퍼 상에 배선용 금속막을 증착하는 단계, 및 상기 금속막을 불활성 가스 플라즈마 분위기의 챔버에서 RF를 인가하여 플로우시키는 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, the present invention, in the metal wiring method of the semiconductor device, the step of depositing a metal film for wiring on the stepped wafer, and the step of flowing the metal film by applying RF in a chamber in an inert gas plasma atmosphere It is characterized by including.

그리고, 상기 금속층 증착시 상온에서 증착하여 이후의 플로우를 용이하게 하는 것을 특징으로 하며, 사이 금속막 플로우를 위해 인가되어 RF는 알루미늄 합금층이 식각되지 않고 플로우가 일어날 정도의 12.5MHz 내지 14.5MHz의 낮은 RF인 것을 특징으로 한다.And, the deposition of the metal layer is characterized in that it facilitates the flow after the deposition at room temperature, the RF is applied for the metal film flow between the 12.5MHz to 14.5MHz of the degree that the flow occurs without the aluminum alloy layer is etched It is characterized by a low RF.

이하, 첨부된 도면 제2도를 참조하여 알루미늄 합금을 일 예로 본 발명에 따른 일실시예를 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. 2 as an example of an aluminum alloy.

본 발명은 종래의 동일한 방법으로 알루미늄 합금을 증착하는데, 후속 공정에서 알루미늄 합금층(4)이 콘택홀 내부로 플로우(flow)되는 것을 용이하게 하기 위하여 상온(room temperature)에서 증착한다. 이렇게 형성된 알루미늄 합금 배선은 스트레스(stress)를 많이 가지고 있는 조밀한 상태가 된다.The present invention deposits an aluminum alloy in the same manner as conventional ones, in which the aluminum alloy layer 4 is deposited at room temperature in order to facilitate the flow of the aluminum alloy layer 4 into the contact hole in a subsequent process. The aluminum alloy wiring thus formed is in a dense state having a lot of stress.

이어서, 상기 알루미늄 합금층이 대기에 노출되면 알루미늄 합금층의 표면에 산화막이 형성되어 후속 열처리 공정에서 알루미늄 합금 플로우시 플로우 효과를 충분히 얻을 수 없기 때문에 대기에 노출되지 않은 상태로 450℃ 내지 600℃, 5×1-8Torr이상의 고진공 상태의 RF 식각 챔버로 이동하여 열처리 공정을 하여 알루미늄 합금을 플로우 시킨다.Subsequently, when the aluminum alloy layer is exposed to the atmosphere, an oxide film is formed on the surface of the aluminum alloy layer, so that the flow effect may not be sufficiently obtained during the flow of the aluminum alloy in a subsequent heat treatment process. The aluminum alloy is flowed through the heat treatment process by moving to a high vacuum RF etching chamber of 5 × 1 -8 Torr or more.

이때 RF 식각 챔버의 압력은 7mTorr 내지 10mTorr의 아르곤(Ar)가스로 압력을 유지하며, 히터(heater)에 -500V 내지 -800V, 12.5MHz 내지 14.5MHz의 낮은 RF 전압을 가한다. 그러나 이는 실제 RF 식각이 일어나지는 않고 전자와 아르곤 이온이 상기 알루미늄 합금에 충돌이 되어 표면의 온도상승을 가져와 상기 알루미늄 합금이 플로우 되도록 한다.At this time, the pressure of the RF etching chamber maintains the pressure with argon (Ar) gas of 7mTorr to 10mTorr, and applies a low RF voltage of -500V to -800V and 12.5MHz to 14.5MHz to the heater. However, this does not cause actual RF etching, and electrons and argon ions collide with the aluminum alloy, resulting in a temperature rise of the surface, causing the aluminum alloy to flow.

상기와 같이 구성된 RF 식각 챔버 내에서의 알루미늄 합금 열처리에 대한 작용상태를 제2도를 통하여 살펴보면, 도면에서 1은 하부 도전층, 2는 절연층, 3은 배리어(barrier) 금속, 4는 알루미늄 합금층을 각각 나타낸다.Looking at the operation state of the aluminum alloy heat treatment in the RF etching chamber configured as described above with reference to Figure 2, 1 is the lower conductive layer, 2 is an insulating layer, 3 is a barrier metal, 4 is an aluminum alloy Each layer is shown.

먼저, 챔버내의 히터에 양전압이 인가되게 되면 고온에서 전자가 상기 알루미늄 합금 표면에 충돌되어 알루미늄 합금층(4) 표면온도를 높이게 되고(제2도(a)), 히터에 부전압이 인가되면 아르곤 이온이 상기 알루미늄 합금층(4) 표면에 충돌되어 표면온도를 높이게 되어 상기 알루미늄 합금층(4)을 콘택홀 내로 플로우 시키게 된다(제2도(b)).First, when a positive voltage is applied to the heater in the chamber, electrons collide with the surface of the aluminum alloy at a high temperature to increase the surface temperature of the aluminum alloy layer 4 (FIG. 2A), and when a negative voltage is applied to the heater, Argon ions collide with the surface of the aluminum alloy layer 4 to raise the surface temperature, thereby causing the aluminum alloy layer 4 to flow into the contact hole (FIG. 2 (b)).

상기 알루미늄 합금층(4) 표면에 충돌되어 아르곤 원자의 질량은 40AMU이기 때문에 낮은 RF 전압에서는 알루미늄 합금층(4) 표면이 식각되지 않으며, 또한 아르곤 이온은 RF 식각 챔버로 이동간에 발생할 수 있는 알루미늄 합금층(4)상의 산화막을 제거해 주기 때문에 더욱 원활한 알루미늄 합금의 플로우를 얻을 수 있다.Since the mass of argon atoms impinging on the surface of the aluminum alloy layer 4 is 40 AMU, the surface of the aluminum alloy layer 4 is not etched at a low RF voltage, and the aluminum alloy may be generated during the movement of argon ions to the RF etching chamber. Since the oxide film on the layer 4 is removed, a smoother aluminum alloy flow can be obtained.

따라서 상기 본 발명에 의해 형성된 알루미늄 합금 배선결과는 제3동에 도시된 바와같이 높은 알루미늄 합금의 스텝 커버리지를 얻을 수 있다.Therefore, the aluminum alloy wiring result formed by the present invention can obtain the step coverage of the high aluminum alloy as shown in the third cavity.

상기와 같이 이루어지는 본 발명은 양호한 스텝 커버리지를 얻을 수 있어 반도체 소자의 신뢰도와 수율을 증가시킬 수 있는 효과가 있다.The present invention as described above has an effect that can obtain a good step coverage can increase the reliability and yield of the semiconductor device.

Claims (5)

반도체 소자의 금속 배선 방법에 있어서, 단차진 웨이퍼 상에 배선용 금속막을 증착하는 단계, 및 상기 금속막을 불활성 가스 플라즈마 분위기의 챔버에서 RF를 인가하여 플로우시키는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 금속 배선 방법.A metal wiring method of a semiconductor device, comprising the steps of: depositing a metal film for wiring on a stepped wafer, and flowing the metal film by applying RF in a chamber in an inert gas plasma atmosphere. Wiring method. 제1항에 있어서, 상기 금속막(4)은 알루미늄 합금막인 것을 특징으로 하는 반도체 소자의 금속 배선 방법.The metal wiring method according to claim 1, wherein the metal film (4) is an aluminum alloy film. 제1항에 있어서, 상기 금속막 플로우를 위한 챔버내 온도는 150℃ 내지 6000℃ 인 것을 특징으로 하는 반도체 소자의 금속 배선 방법.The method of claim 1, wherein the temperature in the chamber for the metal film flow is 150 ° C. to 6000 ° C. 6. 제1항에 있어서, 상기 금속막 플로우를 위해 인가되는 RF를 알루미늄 합금층이 식각되지 않고 플로우 되는 12.5MHz 내지 14.5MHz인 것을 특징으로 하는 반도체 소자의 금속 배선 방법.2. The method of claim 1, wherein the RF applied for the metal film flow is 12.5MHz to 14.5MHz to flow without the aluminum alloy layer is etched. 제1항에 있어서, 상기 금속층 증착시 상온에서 증착하는 것을 특징으로 하는 반도체 소자의 금속 배선 방법.The method of claim 1, wherein the deposition of the metal layer is performed at room temperature.
KR1019920026880A 1992-12-30 1992-12-30 Metal wiring method of semiconductor device KR960008523B1 (en)

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