KR950703073A - 결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride) - Google Patents

결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride) Download PDF

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KR950703073A
KR950703073A KR1019950700552A KR19950700552A KR950703073A KR 950703073 A KR950703073 A KR 950703073A KR 1019950700552 A KR1019950700552 A KR 1019950700552A KR 19950700552 A KR19950700552 A KR 19950700552A KR 950703073 A KR950703073 A KR 950703073A
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crystalline silicon
silicon nitride
molybdenum
source
composite material
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KR1019950700552A
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리차드 에이. 로우덴
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해롤드 더블유. 아담스
마르틴 마리에타 에너지 시스템스, 인코포레이티드(Martin Marietta Energy Systems, Inc.)
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Publication of KR950703073A publication Critical patent/KR950703073A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/10—Chemical vapor infiltration, i.e. CVI

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 결정성 질화규소의 화학적인 증기증착 방법을 제공하려는 것이다. 본 발명에 따른 증기증착 방법은 실리콘 공급원, 몰리브덴 공급원, 질소 공급원 및 수소 공급원의 혼합물을 적당한 기판을 함유하고 있는 챔버내로 도입하는 단계, 및 규화 몰리브덴이 분산된 결정성 질화규소로 이루어진 피복을 기판위로 증착시키기 위해서 상기 혼합물을 열분해시키는 단계를 포함한다.

Description

결정성 질화규소의 저온 화학적 증기증착 방법(MOLYBDENUM ENHANCED LOWTEMPERATURE DEPOSITION OF CRYSTALLINE SILICON NITRIDE)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 공정을 수행하기에 적합한 화학적인 증기증착(CVD) 챔버를 개략적으로 잘라내어 나타낸 도면이다.

Claims (21)

  1. 결정성 질화규소의 화학적인 증기증착 방법으로서, 챔버내로 기판을 도입하는 단계와, 규소 공급원, 몰리브덴 공급원, 질소 공급원 및 수소의 혼합물을 상기 챔버내로 도입하는 단계와, 내부에 몰리브덴 규화물이 분산된 결정성 질화규소의 함유하는 피복을 상기 기판위로 증착시키도록 상기 혼합물을 열 분해시키는 단계를 포함하는 방법.
  2. 제1항에 있어서, 상기 규소 공급원이 실란, 플로로실란 및 염화규소로 구성된 그룹으로 부터 선택되는 조성물로 이루어지는 방법.
  3. 제2항에 있어서, 상기 규소 공급원이 사염화 규소로 이루어지는 방법.
  4. 제1항에 있어서, 상기 몰리브덴 공급원이 몰리브덴 함유 유기금속 조성물 및 할로겐화 몰리브덴으로 구성된 그룹으로 부터 선택되는 조성물로 이루어 지는 방법.
  5. 제4항에 있어서, 상기 몰리브덴 공급원이 오염화 몰리브텐으로 이루어지는 방법.
  6. 제1항에 있어서, 상기 질소 공급원이 암모니아로 이루어지는 방법.
  7. 제1항에 있어서, 상기 열분해 단계가 1000℃ 내지 1500℃ 범위의 온도에서 수행되는 방법.
  8. 제1항에 있어서, 상기 열분해 단계가 1200℃ 내지 1400℃ 범위의 온도에서 수행되는 방법.
  9. 제1항에 있어서, 상기 결정성 질화규소가 β-Si3N4로 이루어지는 방법.
  10. 제1항에 있어서, 상기 기판은 다공성 세라믹 예비 형성물로 이루어지고, 상기 피복은 복합재료를 만들어 내도록 상기 다공성 세라믹 예비 형성물 전체에 걸쳐서 증착되는 방법.
  11. 제10항에 있어서, 상기 복합재료는 상기 다공성 세라믹 예비 형성물 보다 큰 강도, 모듈러스 및 거칠기를 나타내는 방법.
  12. 내부에 분산된 몰리브덴 규화물을 갖는 결정성 질화규소를 포함하는 조성물.
  13. 제12항에 있어서, 상기 결정성 질화규소가 β-Si3N4로 이루어지는 조성물.
  14. 제12항에 있어서, 내산화성을 갖는 조성물.
  15. 피복된 물품으로서, 내부에 분산된 물리브덴 규화물을 갖는 결정성 질화규소로 구성된 피복이 도포되어 있는 기판으로 이루어지는 물품.
  16. 제15항에 있어서, 상기 결정성 질화규소가 β-Si3N4로 이루어지는 물품.
  17. 제15항에 있어서, 상기 피복이 내산화성을 갖는 물품.
  18. 복합재료로서, 공극내에 결정성 질화규소가 증착된 다공성 세라믹 재료로 이루어지고, 상기 결정성 질화규소는 분산된 몰리브덴 규화물을 가지는 복합재료.
  19. 제18항에 있어서, 상기 결정성 질화규소가 β-Si3N4로 이루어지는 복합 재료.
  20. 제18항에 있어서, 내산화성을 갖는 복합재료.
  21. 제18항에 있어서, 상기 다공성 세라믹 재료보다 큰 강도, 모듈러스 및 거칠기를 나타내는 복합재료.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950700552A 1992-03-10 1993-03-10 결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride) KR950703073A (ko)

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US07/849,542 US5300322A (en) 1992-03-10 1992-03-10 Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
US07/849,542 1992-10-10
PCT/US1993/002140 WO1994009178A1 (en) 1992-03-10 1993-03-10 Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

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US (1) US5300322A (ko)
KR (1) KR950703073A (ko)
AU (1) AU3799393A (ko)
CA (1) CA2130335A1 (ko)
WO (1) WO1994009178A1 (ko)

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