KR950028641U - 반도체 소자 제조시 사용되는 축소 노광 장치 - Google Patents

반도체 소자 제조시 사용되는 축소 노광 장치

Info

Publication number
KR950028641U
KR950028641U KR2019940004658U KR19940004658U KR950028641U KR 950028641 U KR950028641 U KR 950028641U KR 2019940004658 U KR2019940004658 U KR 2019940004658U KR 19940004658 U KR19940004658 U KR 19940004658U KR 950028641 U KR950028641 U KR 950028641U
Authority
KR
South Korea
Prior art keywords
reduced exposure
semiconductor device
device used
device manufacturing
exposure device
Prior art date
Application number
KR2019940004658U
Other languages
English (en)
Other versions
KR970007069Y1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR94004658U priority Critical patent/KR970007069Y1/ko
Publication of KR950028641U publication Critical patent/KR950028641U/ko
Application granted granted Critical
Publication of KR970007069Y1 publication Critical patent/KR970007069Y1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
KR94004658U 1994-03-09 1994-03-09 Photolithography apparatus for a semiconductor KR970007069Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94004658U KR970007069Y1 (en) 1994-03-09 1994-03-09 Photolithography apparatus for a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94004658U KR970007069Y1 (en) 1994-03-09 1994-03-09 Photolithography apparatus for a semiconductor

Publications (2)

Publication Number Publication Date
KR950028641U true KR950028641U (ko) 1995-10-20
KR970007069Y1 KR970007069Y1 (en) 1997-07-15

Family

ID=19378622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94004658U KR970007069Y1 (en) 1994-03-09 1994-03-09 Photolithography apparatus for a semiconductor

Country Status (1)

Country Link
KR (1) KR970007069Y1 (ko)

Also Published As

Publication number Publication date
KR970007069Y1 (en) 1997-07-15

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KR950028641U (ko) 반도체 소자 제조시 사용되는 축소 노광 장치

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