KR950028014A - 액정표시소자용 박막트랜지스터 제조방법 - Google Patents
액정표시소자용 박막트랜지스터 제조방법 Download PDFInfo
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- KR950028014A KR950028014A KR1019940005869A KR19940005869A KR950028014A KR 950028014 A KR950028014 A KR 950028014A KR 1019940005869 A KR1019940005869 A KR 1019940005869A KR 19940005869 A KR19940005869 A KR 19940005869A KR 950028014 A KR950028014 A KR 950028014A
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- Prior art keywords
- thin film
- film transistor
- active layer
- driving circuit
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- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract 18
- 238000000151 deposition Methods 0.000 claims abstract 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 4
- 238000007740 vapor deposition Methods 0.000 claims abstract 3
- 229910004205 SiNX Inorganic materials 0.000 claims abstract 2
- 239000012535 impurity Substances 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims abstract 2
- 238000005224 laser annealing Methods 0.000 claims abstract 2
- 238000000059 patterning Methods 0.000 claims abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims 17
- 239000011229 interlayer Substances 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명은 액정표시소자용 박막트랜지스터 제조방법에 관한 것으로, 게이트와 소오스간의 커패시턴스를 줄여 화소부의 플릭커현상을 없애고 구동회로부의 구동주파수를 높이며, 활성층과 게이트절연막 사이의 계면특성을 좋게 하기 위한 것이다. 본 발명은 구동회로부 영역 및 화소부 영역을 포함하는 투명절연기판위에 열화학기상증착법에 의해 비정질실리콘을 증착하는 공정과, 상기 비정질실리콘층을 패터닝하여 구동회로부 박막트랜지스터의 활성층패턴 및 화소부 박막트랜지스터의 활성층패턴을 형성하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴을 레이저 어닐링에 의해 선택적으로 결정화하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴을 포함한 구동회로부 영역 상부에만 선택적으로 산화막을 증착하여 제1게이트 절연막을 형성하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴 및 화소부 박막트랜지스터의 활성층패턴을 수소화하여 구동회로부 박막트랜지스터의 다결정수소화실리콘 활성층 및 화소부 박막트랜지스터의 비정질수소화실리콘 활성층을 형성하는 공정, 상기 구동회로부 박막 트랜지스터의 활성층 및 화소부 박막트랜지스터 활성층을 포함한 기판 전면에 SiNx막을 증착하여 제2게이트절연막을 형성하는 공정, 상기 제2게이트절연막위에 산화막을 증착하여 제3게이트절연막을 형성하는 공정 상기 제3게이트절연막상의 상기 구동회로부 박막트랜지스터 활성층 및 화소부 박막트랜지스터 활성층 상부에 각각 게이트전극을 형성하는 공정, 상기 게이트전극을 마스크로 하여 상기 구동회로부 박막트랜지스터 활성층 및 화소부 박막트랜지스터 활성층에 불순물이온을 주입하여 소오스 및 드레인영역을 형성하는 공정을 포함하는 것을 특징으로 하는 액정표시소자용 박막트랜지스터 제조방법을 제공한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 액정표시소자용 박막트랜지스터 제조방법을 도시한 공정순서도.
Claims (3)
- 구동회로부 영역 및 화소부 영역을 포함하는 투명절연기판위에 열화학기상증착법에 의해 비정질실리콘을 증착하는 공정과, 상기 비정질실리콘층을 패터닝하여 구동회로부 박막트랜지스터의 활성층패턴 및 화소부 박막트랜지스터의 활성층패턴을 형성하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴을 레이저 어닐링에 의해 선택적으로 결정화하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴을 포함한 구동회로부 영역 상부에만 선택적으로 산화막을 증착하여 제1게이트 절연막을 형성하는 공정, 상기 구동회로부 박막트랜지스터의 활성층패턴 및 화소부 박막트랜지스터의 활성층패턴을 수소화하여 구동회로부 박막트랜지스터의 다결정수소화실리콘 활성층 및 화소부 박막트랜지스터의 비정질수소화실리콘 활성층을 형성하는 공정, 상기 구동회로부 박막트랜지스터의 활성층 및 화소부 박막트랜지스터 활성층을 포함한 기판 전면에 SiNx막을 증착하여 제2게이트절연막을 형성하는 공정, 상기 제2게이트절연막위에 산화막을 증착하여 제3게이트절연막을 형성하는 공정 상기 제3게이트절연막상의 상기 구동회로부 박막트랜지스터 활성층 및 화소부 박막트랜지스터 활성층 상부에 각가 게이트전극을 형성하는 공정, 상기 게이트전극을 마스크로 하여 상기 구동회로부 박막트랜지스터 활성층 및 화소부 박막트랜지스터 활성층에 불순물이온을 주입하여 소오스 및 드레인영역을 형성하는 공정을 포함하는 것을 특징으로 하는 액정표시소자용 박막트랜지스터 제조방법.
- 제1항에 있어서, 상기 열화학기상증착법에 의해 형성되는 비정질실리콘막의 수소함량은 1-5atom%이하이고, 표면거칠기는 20Å 이하임을 특징으로 하는 액정표시소자용 박막트랜지스터 제조방법.
- 제1항에 있어서, 상기 소오스 및 드레인영역을 형성하는 공정후에 상기 게이트절연막상에 층간절연막을 형성하는 공정과, 상기 층간절연막 및 게이트절연막을 선택적으로 식각하여 상기 소오스 및 드레인영역을 노출시키는 콘택홀을 형성하는 공정, 상기 층간절연막상에 상기 콘택홀을 통해 상기 소오스 및 드레인영역과 접속되는 소오스 및 드레인 금속전극을 형성하는 공정이 더 포함되는 것을 특징으로 하는 액정표시소자용 박막트랜지스터 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR94005869A KR970006264B1 (en) | 1994-03-23 | 1994-03-23 | Fabrication method of tft |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR94005869A KR970006264B1 (en) | 1994-03-23 | 1994-03-23 | Fabrication method of tft |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950028014A true KR950028014A (ko) | 1995-10-18 |
| KR970006264B1 KR970006264B1 (en) | 1997-04-25 |
Family
ID=19379469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR94005869A KR970006264B1 (en) | 1994-03-23 | 1994-03-23 | Fabrication method of tft |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970006264B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100355713B1 (ko) * | 1999-05-28 | 2002-10-12 | 삼성전자 주식회사 | 탑 게이트 방식 티에프티 엘시디 및 제조방법 |
-
1994
- 1994-03-23 KR KR94005869A patent/KR970006264B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100355713B1 (ko) * | 1999-05-28 | 2002-10-12 | 삼성전자 주식회사 | 탑 게이트 방식 티에프티 엘시디 및 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970006264B1 (en) | 1997-04-25 |
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