KR950027984A - How to remove photoresist - Google Patents
How to remove photoresist Download PDFInfo
- Publication number
- KR950027984A KR950027984A KR1019940005519A KR19940005519A KR950027984A KR 950027984 A KR950027984 A KR 950027984A KR 1019940005519 A KR1019940005519 A KR 1019940005519A KR 19940005519 A KR19940005519 A KR 19940005519A KR 950027984 A KR950027984 A KR 950027984A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- rework
- photoresist
- photoresist film
- photolithography process
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 반도체 소자 제조시 포토리소그래피 공정에서 작업실수로 인하여 재작업(rework)을 필요로 하는 웨이퍼에 대한 감광막 제거 방법에 관한 것으로 웨이퍼를 로딩하는 단계; 감광막을 용해시키는 화학용액(chemical PR striper)을 웨이퍼위에 분사시켜 웨이퍼 위의 감광막을 제거한 다음, 순수로 상기 화학용액을 제거하고, 고속으로 웨이퍼를 회전시키면서 건조시키는 단계; 및 웨이퍼를 언로딩하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 포토리소그래피 공정의 재작업 발생시 종래 재작업 공정시와 동일하게 낱장단위로 제거할 수 있으며 재작업 웨이퍼의 포토레지스트 제거 주기가 단축되어 재작업 요구 로트에 대한 포토마스크 작업이 신속한 효과를 얻을 수 있다.The present invention relates to a method of removing a photoresist film for a wafer requiring rework due to a mistake in a photolithography process in manufacturing a semiconductor device, the method comprising: loading a wafer; Spraying a photoresist film (chemical PR striper) on the wafer to remove the photoresist film on the wafer, removing the chemical solution with pure water, and drying the wafer while rotating the wafer at high speed; And unloading the wafer so that the present invention can be removed in the same unit as the conventional rework process when the rework of the photolithography process occurs and the photoresist removal cycle of the rework wafer is shortened. As a result, the photomask operation on the rework request lot can be quickly achieved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 방법에 따른 공정 절차를 나타내는 블럭도로,1 is a block diagram showing a process procedure according to the method of the present invention,
제2도는 감광막 제거용 화학용액을 웨이퍼위에 분사시키기 위한 장비구성을 나타내는 개략도.2 is a schematic diagram showing the configuration of equipment for injecting a photoresist removal chemical solution onto a wafer.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940005519A KR950027984A (en) | 1994-03-18 | 1994-03-18 | How to remove photoresist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940005519A KR950027984A (en) | 1994-03-18 | 1994-03-18 | How to remove photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950027984A true KR950027984A (en) | 1995-10-18 |
Family
ID=66689693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940005519A KR950027984A (en) | 1994-03-18 | 1994-03-18 | How to remove photoresist |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950027984A (en) |
-
1994
- 1994-03-18 KR KR1019940005519A patent/KR950027984A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |