KR950008432A - Si-O 함유 피막의 형성방법 - Google Patents
Si-O 함유 피막의 형성방법 Download PDFInfo
- Publication number
- KR950008432A KR950008432A KR1019940022888A KR19940022888A KR950008432A KR 950008432 A KR950008432 A KR 950008432A KR 1019940022888 A KR1019940022888 A KR 1019940022888A KR 19940022888 A KR19940022888 A KR 19940022888A KR 950008432 A KR950008432 A KR 950008432A
- Authority
- KR
- South Korea
- Prior art keywords
- silsesquioxane resin
- hydrogen
- hydrogen silsesquioxane
- film
- containing ceramic
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 10
- 229910018557 Si O Inorganic materials 0.000 title claims abstract 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 title claims abstract 9
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000011347 resin Substances 0.000 claims abstract 11
- 229920005989 resin Polymers 0.000 claims abstract 11
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims abstract 10
- 239000000758 substrate Substances 0.000 claims abstract 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 5
- 238000005524 ceramic coating Methods 0.000 claims abstract 3
- 239000000919 ceramic Substances 0.000 claims 6
- 238000000197 pyrolysis Methods 0.000 claims 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000003973 paint Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Structural Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Silicon Compounds (AREA)
Abstract
본 발명은 전자 기판위에 개선된 Si-O 함유 피막을 형성시키는 방법에 관한 것이다. 본 방법은 수소 기체의 존재하에 수소 실세스퀴옥산 수지를 Si-O 함유 세라믹 피막으로 전환시킴을 포함한다. 형성된 피막은 안정한 유전율과 같은 개선된 특성을 갖는다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (9)
- 수소 실세스퀴옥산 수지를 포함하는 도료를 전자 기판위에 도포하고; 수소 실세스퀴옥산 수지 도료를 Si-O 함유 세라믹 피막으로 전환시키기에 충분한 온도에서 열분해 분위기에서 피복된 기판을 가열함[여기서, 수소 기체는, 수소 실세스퀴옥산 수지가 Si-O 함유 세라믹 피막으로 전환되는 동안 열분해 분위기내로 도입된다]을 포함하여, Si-O 함유 세라믹 피막을 전자 기판 위에 형성시키는 방법.
- 제1항에 있어서, 피복된 기판이 50 내지 1000℃의 온도 범위에서 6시간 미만 동안 가열되는 방법.
- 제1항에 있어서, 수소 실세스퀴옥산 수지가, 중합체 종의 75%이상의 수평균분자량이 1200 내지 100,000℃로 되도록 중합체 종을 함유하는 방법.
- 제1항에 있어서, 수소 실세스퀴옥산 수지 함유 피막이 티탄, 지르코늄, 알루미늄, 탄탈, 바나듐, 니오브, 붕소 및 인으로부터 선택된 원소를 함유하는 화합물(여기서, 이 화합물은 알콕시 또는 아실옥시로부터 선택된 가수분해성 치환체를 하나 이상 함유하며, 또한 이 화합물은 실리카 피복이 개질 세라믹 산화물 0.1내지 30중량%를 함유하는 양으로 존재한다)을 포함하는 개질 세라믹 산화물 전구체를 함유하는 방법.
- 제1항에 있어서, 수소 실세스퀴옥산 수지 함유 피막이, 수소 실세스퀴옥산 수지의 중량을 기준으로 하여, 백금, 로듐 또는 구리 5 내지 1000ppm의 백금, 로듐 또는 구리 촉매를 함유하는 방법.
- 제1항에 있어서, 열분해 분위기가 공기, O2, 산소 플라즈마, 오존, 불활성 기체, 암모니아, 아민, 수분 및 N2O로부터 선택된 기체를 함유하는 방법.
- 제1항에 있어서, 열분해 분위기 속의 수소 기체가 1 내지 30중량%의 농도 범위로 존재하는 방법.
- 제1항에 있어서, 열분해 분위기 속의 수소 기체가 5용량% 이하의 농도로 존재하는 방법.
- 수소 실세스퀴옥산 수지가 Si-O 함유 세라믹 피막으로 전환되는 동안 수소 기체를 열분해 분위기 속으로 도입시킴을 특징으로 하여, 수소 실세스퀴옥산 수지를 포함하는 도료를 전자 기판위에 도포하고, 수소 실세스퀴옥산 수지 도료를 Si-O 함유 세라믹 피막으로 전환시키기에 충분한 온도로 열분해 분위기 속에서 피복된 기판을 가열함을 포함하여, Si-O 함유 세라믹 피막을 전자 기판 위에 형성시키는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/119634 | 1993-09-13 | ||
| US08/119,634 US5320868A (en) | 1993-09-13 | 1993-09-13 | Method of forming SI-O containing coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950008432A true KR950008432A (ko) | 1995-04-17 |
| KR100333989B1 KR100333989B1 (ko) | 2002-11-13 |
Family
ID=22385449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940022888A KR100333989B1 (ko) | 1993-09-13 | 1994-09-12 | Si-O함유 피막의 형성방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5320868A (ko) |
| EP (1) | EP0643025B1 (ko) |
| JP (1) | JPH07165413A (ko) |
| KR (1) | KR100333989B1 (ko) |
| CA (1) | CA2117591A1 (ko) |
| DE (1) | DE69400609T2 (ko) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
| EP0686680A4 (en) * | 1993-12-27 | 1996-07-24 | Kawasaki Steel Co | INSULATING FILM FOR SEMICONDUCTOR DEVICES, COATING FLUID USED TO FORM THE FILM, AND PROCESS FOR PRODUCING SAID FILM |
| US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
| US5530293A (en) * | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
| US5656555A (en) * | 1995-02-17 | 1997-08-12 | Texas Instruments Incorporated | Modified hydrogen silsesquioxane spin-on glass |
| US5618878A (en) * | 1995-04-07 | 1997-04-08 | Dow Corning Corporation | Hydrogen silsesquioxane resin coating composition |
| WO1997010282A1 (en) * | 1995-09-12 | 1997-03-20 | Gelest, Inc. | Beta-substituted organosilsesquioxanes and use thereof |
| US6770726B1 (en) | 1995-09-12 | 2004-08-03 | Gelest, Inc. | β-substituted organosilsesquioxane polymers |
| US6020410A (en) * | 1996-10-29 | 2000-02-01 | Alliedsignal Inc. | Stable solution of a silsesquioxane or siloxane resin and a silicone solvent |
| TW367273B (en) * | 1996-12-20 | 1999-08-21 | Dow Corning | Method of producing low dielectric ceramic-like materials |
| US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
| US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
| US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| TW441006B (en) * | 1998-05-18 | 2001-06-16 | United Microelectronics Corp | Method of forming inter-metal dielectric layer |
| KR100308213B1 (ko) * | 1999-02-12 | 2001-09-26 | 윤종용 | 반도체 장치를 위한 저유전 층간 절연막의 제조 방법 |
| US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
| JP3913638B2 (ja) * | 2001-09-03 | 2007-05-09 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
| US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| KR20100112425A (ko) * | 2009-04-09 | 2010-10-19 | (주)와이에스썸텍 | 금속 기판의 고방열성을 위한 절연층 형성방법 및 이에 의해 제조된 금속 기판 |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| CA2766589A1 (en) * | 2009-06-30 | 2011-01-06 | Nanoink, Inc. | Advanced photomask repair |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| JP2023521697A (ja) * | 2020-04-06 | 2023-05-25 | ゲレスト・インコーポレイテッド | 勾配ガラス状セラミック構造体及びそのボトムアップ製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
| US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
| CA2027031A1 (en) * | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
| US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
| US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
| US5312684A (en) * | 1991-05-02 | 1994-05-17 | Dow Corning Corporation | Threshold switching device |
-
1993
- 1993-09-13 US US08/119,634 patent/US5320868A/en not_active Expired - Fee Related
-
1994
- 1994-08-30 CA CA002117591A patent/CA2117591A1/en not_active Abandoned
- 1994-09-07 EP EP94306558A patent/EP0643025B1/en not_active Expired - Lifetime
- 1994-09-07 DE DE69400609T patent/DE69400609T2/de not_active Expired - Fee Related
- 1994-09-09 JP JP6215744A patent/JPH07165413A/ja not_active Ceased
- 1994-09-12 KR KR1019940022888A patent/KR100333989B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07165413A (ja) | 1995-06-27 |
| KR100333989B1 (ko) | 2002-11-13 |
| EP0643025A1 (en) | 1995-03-15 |
| EP0643025B1 (en) | 1996-09-25 |
| US5320868A (en) | 1994-06-14 |
| DE69400609D1 (de) | 1996-10-31 |
| CA2117591A1 (en) | 1995-03-14 |
| DE69400609T2 (de) | 1997-03-06 |
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