KR940021686A - 하이드로겐 실세스퀴옥산 수지와 충전제를 포함하는 조성물을 사용하여 피복물을 형성시키는 방법 - Google Patents
하이드로겐 실세스퀴옥산 수지와 충전제를 포함하는 조성물을 사용하여 피복물을 형성시키는 방법 Download PDFInfo
- Publication number
- KR940021686A KR940021686A KR1019940004426A KR19940004426A KR940021686A KR 940021686 A KR940021686 A KR 940021686A KR 1019940004426 A KR1019940004426 A KR 1019940004426A KR 19940004426 A KR19940004426 A KR 19940004426A KR 940021686 A KR940021686 A KR 940021686A
- Authority
- KR
- South Korea
- Prior art keywords
- coating
- filler
- coating composition
- substrate
- hydrogen silsesquioxane
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 19
- 239000000945 filler Substances 0.000 title claims abstract 11
- 238000000576 coating method Methods 0.000 title claims abstract 10
- 239000011248 coating agent Substances 0.000 title claims abstract 9
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 title claims abstract 9
- 229920005989 resin Polymers 0.000 title claims abstract 9
- 239000011347 resin Substances 0.000 title claims abstract 9
- 239000000203 mixture Substances 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims abstract 11
- 238000005524 ceramic coating Methods 0.000 claims abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 239000008199 coating composition Substances 0.000 claims 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000002904 solvent Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 239000005995 Aluminium silicate Substances 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 235000012211 aluminium silicate Nutrition 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- 229920002678 cellulose Polymers 0.000 claims 1
- 239000004927 clay Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010445 mica Substances 0.000 claims 1
- 229910052618 mica group Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000005011 phenolic resin Substances 0.000 claims 1
- 229920001568 phenolic resin Polymers 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000009987 spinning Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- 239000000375 suspending agent Substances 0.000 claims 1
- 239000000454 talc Substances 0.000 claims 1
- 229910052623 talc Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 239000010456 wollastonite Substances 0.000 claims 1
- 229910052882 wollastonite Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
- C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C14—SKINS; HIDES; PELTS; LEATHER
- C14C—CHEMICAL TREATMENT OF HIDES, SKINS OR LEATHER, e.g. TANNING, IMPREGNATING, FINISHING; APPARATUS THEREFOR; COMPOSITIONS FOR TANNING
- C14C11/00—Surface finishing of leather
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/44—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the composition of the continuous phase
- C03C2217/45—Inorganic continuous phases
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/465—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase having a specific shape
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
- C03C2217/475—Inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
- C03C2217/475—Inorganic materials
- C03C2217/479—Metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/80—Optical properties, e.g. transparency or reflexibility
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/90—Electrical properties
- C04B2111/94—Electrically conducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wood Science & Technology (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Nanotechnology (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Silicon Compounds (AREA)
Abstract
본 발명은 피복물을 기재 위에 형성하는 방법 및 이에 의해 피복된 기재에 관한 것이다. 당해 방법은 하이드로겐 실세스퀴옥산 수지와 충전제를 포함하는 피복물을 기재에 적용시키고 하이드로겐 실세스퀴옥산 수지를 세라믹 피복물로 전환시키기에 충분한 온도에서 피복된 기재를 가열함을 포함한다. 당해 방법은 전자장치에 피복물을 형성시키는데 있어서 특히 유용하다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (18)
- 하이드로겐 실세스퀴옥산 수지와 충전제를 포함하는 피복 조성물을 기재에 적용시키고, 피복된 기재를 50 내지 1000℃의 온도에서 3시간 미만 동안 가열하여 피복 조성물을 세라믹 피복물로 전환시킴을 포함하여, 기재 위에 피복물을 형성하는 방법.
- 제1항에 있어서, 피복 조성물이, 기재를 용매, 하이드로겐 실세스퀴옥산 수지 및 충전제를 포함하는 액체 혼합물로 피복시키고, 이어서 용매를 증발시킴을 포함하는 공정에 의해 기재에 적용되는 방법.
- 제2항에 있어서, 액체 혼합물이 분무 피복, 침지 피복, 유동 피복 또는 방사 피복에 의해 기재에 피복되는 방법.
- 제2항에 있어서, 피복된 기재가 공기, O2, 산소 플라즈마, 불활성 기체, 암모니아, 아민, 수분 및 N2O로부터 선택된 환경 속에서 가열되는 방법.
- 제1항에 있어서, 하이드로겐 실세스퀴옥산 수지가, 중합체성 화학종의 75% 이상의 중량 평균 분자량이 1200 내지 100,000으로 되도록 분별화되는 방법.
- 제1항에 있어서, 피복 조성물이, 티타늄, 지르코늄, 알루미늄, 탄탈륨, 바나듐, 니오븀, 붕소 및 인으로부터 선택된 원소와 알콕시 및 아실옥시로부터 선택된 하나 이상의 가수분해성 치환체를 함유하며 피복물이 개질 세라믹 산화물을 0.1 내지 30중량% 함유하도록 하는 양으로 존재하는 화합물을 포함하는 개질세라믹 산화물 전구체를 추가로 함유하는 방법.
- 제1항에 있어서, 피복 조성물이 백금, 로듐 또는 구리 촉매를 하이드로겐 실세스퀴옥산 수지의 중량을 기준으로 하여 5 내지 1000ppm의 백금, 로듐 또는 구리의 양으로 추가로 함유하는 방법.
- 제1항에 있어서, 피복 조성물이 충전제 표면을 개질시키는 물질을 추가로 함유하는 방법.
- 제1항에 있어서, 피복 조성물이 현탁제를 추가로 함유하는 방법.
- 제1항에 있어서, 충전제가 분말, 입자, 플레이크 및 미소밸룬(microballoon)으로부터 선택된 형태로 존재하는 방법.
- 제1항에 있어서, 충전제가 산화물, 탄화물, 질화물, 붕화물, 티탄산염, 니오브산염, 규산염, 금속, 인, 규회석, 운모, 고령토, 점토, 활석, 셀룰로즈, 폴리아미드 및 페놀 수지로부터 선택되는 방법.
- 제1항에 있어서, 충전제의 입자 크기 범위가 500㎛ 미만인 방법.
- 제1항에 있어서, 충전제가 피복 조성물에 90중량% 미만의 양으로 존재하는 방법.
- 제1항에 있어서, 세라믹 피복물의 유전상수가 낮은 방법.
- 제1항에 있어서, 세라믹 피복물의 유전상수가 높은 방법.
- 제1항에 있어서, 세라믹 피복물이 전도성인 방법.
- 용매 속에 희석된 하이드로겐 실세스퀴옥산 수지와 충전제를 포함함을 특징으로 하는 피복 조성물.
- 제17항에 있어서, 하이드로겐 실세스퀴옥산 수지와 충전제이, 고체 함량이 0.5 내지 80중량%로 되도록 희석된 피복 조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2806393A | 1993-03-08 | 1993-03-08 | |
US08/028,063 | 1993-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940021686A true KR940021686A (ko) | 1994-10-19 |
KR100313383B1 KR100313383B1 (ko) | 2001-12-28 |
Family
ID=21841366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940004426A KR100313383B1 (ko) | 1993-03-08 | 1994-03-08 | 수소실세스퀴옥산수지와충전제를포함하는도료조성물및이를사용하여피막을형성하는방법 |
Country Status (5)
Country | Link |
---|---|
US (6) | US5387480A (ko) |
EP (1) | EP0615000B1 (ko) |
JP (1) | JPH06345417A (ko) |
KR (1) | KR100313383B1 (ko) |
DE (1) | DE69426998T2 (ko) |
Families Citing this family (118)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
JP3418458B2 (ja) * | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
US5448111A (en) * | 1993-09-20 | 1995-09-05 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
EP0662491B1 (en) * | 1993-12-28 | 1999-03-24 | Nikkiso Co., Ltd. | Prepreg, process for preparation of prepreg, and products derived therefrom |
US5399441A (en) * | 1994-04-12 | 1995-03-21 | Dow Corning Corporation | Method of applying opaque coatings |
JP3462562B2 (ja) * | 1994-04-14 | 2003-11-05 | 日本原子力研究所 | ゲル粒子製造方法及び装置 |
KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
US5530293A (en) | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
US5516596A (en) * | 1994-12-19 | 1996-05-14 | Dow Corning Corporation | Method of forming a composite, article and composition |
US5501875A (en) | 1994-12-27 | 1996-03-26 | Dow Corning Corporation | Metal coated silica precursor powders |
US5656555A (en) * | 1995-02-17 | 1997-08-12 | Texas Instruments Incorporated | Modified hydrogen silsesquioxane spin-on glass |
US5516867A (en) * | 1995-05-12 | 1996-05-14 | Dow Corning Corporation | Modified hydrogen silsesquioxane resin |
US5635240A (en) * | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
US5616202A (en) * | 1995-06-26 | 1997-04-01 | Dow Corning Corporation | Enhanced adhesion of H-resin derived silica to gold |
JP3070450B2 (ja) * | 1995-07-14 | 2000-07-31 | ヤマハ株式会社 | 多層配線形成法 |
US5661092A (en) * | 1995-09-01 | 1997-08-26 | The University Of Connecticut | Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof |
US5693701A (en) * | 1995-10-26 | 1997-12-02 | Dow Corning Corporation | Tamper-proof electronic coatings |
US6287985B1 (en) * | 1995-10-27 | 2001-09-11 | Honeywell International Inc. | Process for applying a molten droplet coating for integrated circuits |
US5877093A (en) * | 1995-10-27 | 1999-03-02 | Honeywell Inc. | Process for coating an integrated circuit device with a molten spray |
US5789325A (en) * | 1996-04-29 | 1998-08-04 | Dow Corning Corporation | Coating electronic substrates with silica derived from polycarbosilane |
US5837603A (en) * | 1996-05-08 | 1998-11-17 | Harris Corporation | Planarization method by use of particle dispersion and subsequent thermal flow |
WO1997047040A1 (en) * | 1996-05-30 | 1997-12-11 | Shellcase Ltd. | I.c. device with concealed conductor lines |
US5780163A (en) * | 1996-06-05 | 1998-07-14 | Dow Corning Corporation | Multilayer coating for microelectronic devices |
US5807611A (en) * | 1996-10-04 | 1998-09-15 | Dow Corning Corporation | Electronic coatings |
US5730792A (en) * | 1996-10-04 | 1998-03-24 | Dow Corning Corporation | Opaque ceramic coatings |
US5711987A (en) * | 1996-10-04 | 1998-01-27 | Dow Corning Corporation | Electronic coatings |
US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
JP3123449B2 (ja) * | 1996-11-01 | 2001-01-09 | ヤマハ株式会社 | 多層配線形成法 |
JP3082688B2 (ja) * | 1996-11-05 | 2000-08-28 | ヤマハ株式会社 | 配線形成法 |
TW367273B (en) * | 1996-12-20 | 1999-08-21 | Dow Corning | Method of producing low dielectric ceramic-like materials |
JP3225872B2 (ja) | 1996-12-24 | 2001-11-05 | ヤマハ株式会社 | 酸化シリコン膜形成法 |
JPH10247686A (ja) * | 1996-12-30 | 1998-09-14 | Yamaha Corp | 多層配線形成法 |
DE69806824T2 (de) * | 1997-02-07 | 2003-02-27 | Dow Corning Corp., Midland | Verfahren zur Herstellung von Überzügen auf Elektronikteilen |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
TW392288B (en) | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
JPH11103079A (ja) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 集積型光起電力装置の製造方法 |
US6018002A (en) * | 1998-02-06 | 2000-01-25 | Dow Corning Corporation | Photoluminescent material from hydrogen silsesquioxane resin |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US5935638A (en) * | 1998-08-06 | 1999-08-10 | Dow Corning Corporation | Silicon dioxide containing coating |
DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
DE19946125C1 (de) * | 1999-09-20 | 2001-01-04 | Plasma Photonics Gmbh | Leuchtstofffolie, Verfahren zu ihrer Herstellung sowie Bestrahlungsanordnung mit der Leuchtstofffolie |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
TW502286B (en) * | 1999-12-09 | 2002-09-11 | Koninkl Philips Electronics Nv | Semiconductor device comprising a security coating and smartcard provided with such a device |
US6402985B1 (en) * | 2000-03-17 | 2002-06-11 | The United States Of America As Represented By The Secretary Of The Navy | Method for preparing efficient low voltage phosphors and products produced thereby |
WO2001089827A1 (en) * | 2000-05-18 | 2001-11-29 | Georgia Tech Research Corporation | High dielectric constant nano-structure polymer-ceramic composite |
US6517958B1 (en) * | 2000-07-14 | 2003-02-11 | Canon Kabushiki Kaisha | Organic-inorganic hybrid light emitting devices (HLED) |
EP1179912A1 (en) * | 2000-08-09 | 2002-02-13 | STMicroelectronics S.r.l. | Chaotic encryption |
US6451646B1 (en) * | 2000-08-30 | 2002-09-17 | Micron Technology, Inc. | High-k dielectric materials and processes for manufacturing them |
DE10043955A1 (de) * | 2000-09-06 | 2002-04-04 | Infineon Technologies Ag | Halbleiterchip mit einer Schutzabdeckung und zugehöriges Herstellungsverfahren |
DE10055082A1 (de) * | 2000-11-07 | 2002-05-16 | Bosch Gmbh Robert | Keramischer Verbundwerkstoff |
US7378719B2 (en) * | 2000-12-20 | 2008-05-27 | Micron Technology, Inc. | Low leakage MIM capacitor |
US6653718B2 (en) * | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
DE10131014C1 (de) * | 2001-06-27 | 2002-09-05 | Infineon Technologies Ag | Gegen Analyse geschütztes Halbleiterbauelement und zugehöriges Herstellungsverfahren |
JP2005298529A (ja) * | 2001-12-28 | 2005-10-27 | Doppel:Kk | 高蓄光発光材とその製造方法 |
US6731051B2 (en) * | 2002-04-22 | 2004-05-04 | Osram Sylvania Inc. | Blue incandescent appliance lamp |
US20060147699A1 (en) * | 2002-10-03 | 2006-07-06 | Alberta Research Council Inc. | Protective ceramic coating |
US7029738B2 (en) * | 2003-04-11 | 2006-04-18 | Dinformatica del Noroeste S.A. de C.V. | System for discouraging the removal of identification labels adhered to a surface |
CN101186793A (zh) * | 2003-04-15 | 2008-05-28 | 皇家飞利浦电子股份有限公司 | 耐热粘合剂 |
US20050123760A1 (en) * | 2003-10-15 | 2005-06-09 | Cammack J. K. | Light-emitting nanoparticle compositions |
JP2005310756A (ja) * | 2004-03-26 | 2005-11-04 | Koito Mfg Co Ltd | 光源モジュールおよび車両用前照灯 |
FR2872610B1 (fr) * | 2004-07-02 | 2007-06-08 | Commissariat Energie Atomique | Dispositif de securisation de composants |
US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
KR101436791B1 (ko) | 2004-10-29 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 재료, 발광 소자, 발광 장치 및 이의 제조방법 |
DE102005018246A1 (de) * | 2005-04-19 | 2006-10-26 | Schott Ag | Glas- oder Glaskeramik-Artikel mit dekorativer Beschichtung |
US20070099005A1 (en) * | 2005-10-31 | 2007-05-03 | Honeywell International Inc. | Thick crack-free silica film by colloidal silica incorporation |
US8076185B1 (en) | 2006-08-23 | 2011-12-13 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US8174830B2 (en) * | 2008-05-06 | 2012-05-08 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US8617913B2 (en) * | 2006-08-23 | 2013-12-31 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US8084855B2 (en) | 2006-08-23 | 2011-12-27 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8637980B1 (en) | 2007-12-18 | 2014-01-28 | Rockwell Collins, Inc. | Adhesive applications using alkali silicate glass for electronics |
US7915527B1 (en) | 2006-08-23 | 2011-03-29 | Rockwell Collins, Inc. | Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings |
US8166645B2 (en) * | 2006-08-23 | 2012-05-01 | Rockwell Collins, Inc. | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US20080118730A1 (en) * | 2006-11-22 | 2008-05-22 | Ta-Hua Yu | Biaxially oriented film, laminates made therefrom, and method |
JP5149512B2 (ja) * | 2007-02-02 | 2013-02-20 | 東レ・ダウコーニング株式会社 | 液状硬化性組成物、コーテイング方法、無機質基板および半導体装置 |
US7857905B2 (en) * | 2007-03-05 | 2010-12-28 | Momentive Performance Materials Inc. | Flexible thermal cure silicone hardcoats |
JP5385903B2 (ja) * | 2007-07-05 | 2014-01-08 | 日東電工株式会社 | 発光素子および発光組成物 |
WO2009064661A1 (en) | 2007-11-15 | 2009-05-22 | Nitto Denko Corporation | Light emitting devices and compositions |
US8363189B2 (en) * | 2007-12-18 | 2013-01-29 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
JP5226336B2 (ja) * | 2008-02-15 | 2013-07-03 | 株式会社神戸製鋼所 | 酸化シリコン膜の製造方法 |
US8205337B2 (en) * | 2008-09-12 | 2012-06-26 | Rockwell Collins, Inc. | Fabrication process for a flexible, thin thermal spreader |
US8650886B2 (en) * | 2008-09-12 | 2014-02-18 | Rockwell Collins, Inc. | Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections |
US8616266B2 (en) * | 2008-09-12 | 2013-12-31 | Rockwell Collins, Inc. | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US20110140004A1 (en) * | 2008-07-22 | 2011-06-16 | Agc Glass Europe | Glass article with identification means and method for identifying a glass article |
US8119040B2 (en) | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
JP2012505298A (ja) | 2008-10-13 | 2012-03-01 | 日東電工株式会社 | 印刷可能な発光組成物 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
EP2743078B1 (en) * | 2011-08-09 | 2018-12-26 | Mitsubishi Chemical Corporation | Transparent laminated film |
US9435915B1 (en) | 2012-09-28 | 2016-09-06 | Rockwell Collins, Inc. | Antiglare treatment for glass |
JP2013241335A (ja) * | 2013-08-02 | 2013-12-05 | Agc Glass Europe | 識別手段を有するガラス物品及びガラス物品を識別するための方法 |
EP3030626A2 (en) | 2013-08-05 | 2016-06-15 | Corning Incorporated | Luminescent coatings and devices |
CN103943610B (zh) | 2014-04-16 | 2016-12-07 | 华为技术有限公司 | 一种电子元件封装结构及电子设备 |
JP2018502193A (ja) | 2014-12-22 | 2018-01-25 | ブリヂストン アメリカズ タイヤ オペレーションズ、 エルエルシー | タイヤ内の無線デバイス用のゴム組成物 |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
US10175064B2 (en) | 2015-09-25 | 2019-01-08 | International Business Machines Corporation | Circuit boards and electronic packages with embedded tamper-respondent sensor |
US9911012B2 (en) | 2015-09-25 | 2018-03-06 | International Business Machines Corporation | Overlapping, discrete tamper-respondent sensors |
CN108699376A (zh) | 2015-11-09 | 2018-10-23 | 普利司通美国轮胎运营有限责任公司 | 用于电子通信模块的橡胶涂层,包含该橡胶涂层的电子模块以及相关方法 |
US9916744B2 (en) | 2016-02-25 | 2018-03-13 | International Business Machines Corporation | Multi-layer stack with embedded tamper-detect protection |
WO2017155902A1 (en) * | 2016-03-07 | 2017-09-14 | Prasad, Ravi | Novel multilayer stacks including a stress relief layer, methods and compositions relating thereto |
KR20170112381A (ko) * | 2016-03-31 | 2017-10-12 | 삼성전기주식회사 | 세라믹 조성물 및 이를 포함하는 적층형 커패시터 |
US9881880B2 (en) | 2016-05-13 | 2018-01-30 | International Business Machines Corporation | Tamper-proof electronic packages with stressed glass component substrate(s) |
US9913370B2 (en) * | 2016-05-13 | 2018-03-06 | International Business Machines Corporation | Tamper-proof electronic packages formed with stressed glass |
US10299372B2 (en) | 2016-09-26 | 2019-05-21 | International Business Machines Corporation | Vented tamper-respondent assemblies |
US10306753B1 (en) | 2018-02-22 | 2019-05-28 | International Business Machines Corporation | Enclosure-to-board interface with tamper-detect circuit(s) |
CN109439059A (zh) * | 2018-11-09 | 2019-03-08 | 刘景典 | 一种高韧性陶瓷涂料及其制备方法 |
CN109956742B (zh) * | 2019-04-29 | 2021-06-18 | 东北大学 | 一种高温埋碳法制备高纯度铝酸铈的方法 |
WO2021061713A1 (en) * | 2019-09-27 | 2021-04-01 | B&B Blending, Llc | Use of a fluorescent optical brightener or phosphorescent indicator within ceramic coatings for visual detection and identification |
CN112812361B (zh) * | 2020-12-31 | 2024-01-09 | 浙江三时纪新材科技有限公司 | 一种二氧化硅粉体填料的制备方法、由此得到的粉体填料及其应用 |
CN116947576A (zh) * | 2022-04-20 | 2023-10-27 | 北京理工大学 | 一种多面体低聚硅倍半氧烷包覆二硝酰胺铵的简易制备方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH492948A (fr) | 1968-09-13 | 1970-06-30 | Rador S A | Bande pour l'obtention d'un élément barbelé |
US3615272A (en) | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
US3725671A (en) * | 1970-11-02 | 1973-04-03 | Us Navy | Pyrotechnic eradication of microcircuits |
US3882323A (en) * | 1973-12-17 | 1975-05-06 | Us Navy | Method and apparatus for protecting sensitive information contained in thin-film microelectonic circuitry |
US3882324A (en) * | 1973-12-17 | 1975-05-06 | Us Navy | Method and apparatus for combustibly destroying microelectronic circuit board interconnections |
US3986997A (en) * | 1974-06-25 | 1976-10-19 | Dow Corning Corporation | Pigment-free coating compositions |
US5042386A (en) * | 1974-09-27 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Destructive device for metal oxide-semiconductors |
JPS59178749A (ja) | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | 配線構造体 |
JPS6086017A (ja) | 1983-10-17 | 1985-05-15 | Fujitsu Ltd | ポリハイドロジエンシルセスキオキサンの製法 |
JPS63120773A (ja) * | 1986-11-10 | 1988-05-25 | Toray Silicone Co Ltd | シリコ−ン水性エマルジヨン防水材組成物 |
JPS63107122A (ja) | 1986-10-24 | 1988-05-12 | Fujitsu Ltd | 凹凸基板の平坦化方法 |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4898907A (en) * | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US5008320A (en) * | 1986-12-04 | 1991-04-16 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
US4808653A (en) * | 1986-12-04 | 1989-02-28 | Dow Corning Corporation | Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors |
US4997698A (en) * | 1987-05-04 | 1991-03-05 | Allied-Signal, Inc. | Ceramic coated metal substrates for electronic applications |
CA2010335A1 (en) * | 1989-03-09 | 1990-09-09 | Ronald H. Baney | Method for protective coating superconductors |
US5011706A (en) | 1989-04-12 | 1991-04-30 | Dow Corning Corporation | Method of forming coatings containing amorphous silicon carbide |
FR2647798B1 (fr) * | 1989-05-31 | 1991-09-13 | Rhone Poulenc Chimie | Dispersion aqueuse a base d'huiles silicones fonctionnalisees pouvant reticuler en un elastomere par elimination de l'eau |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5085893A (en) * | 1989-07-28 | 1992-02-04 | Dow Corning Corporation | Process for forming a coating on a substrate using a silsesquioxane resin |
US5045592A (en) * | 1989-07-28 | 1991-09-03 | Dow Corning Corporation | Metastable silane hydrolyzates |
US5010159A (en) | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
JPH0410339A (ja) * | 1990-04-27 | 1992-01-14 | Asahi Glass Co Ltd | 陰極線管パネル用着色塗布液及びそれを塗布した陰極線管 |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
US5380553A (en) * | 1990-12-24 | 1995-01-10 | Dow Corning Corporation | Reverse direction pyrolysis processing |
US5258334A (en) * | 1993-01-15 | 1993-11-02 | The U.S. Government As Represented By The Director, National Security Agency | Process of preventing visual access to a semiconductor device by applying an opaque ceramic coating to integrated circuit devices |
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
-
1993
- 1993-08-09 US US08/103,371 patent/US5387480A/en not_active Expired - Fee Related
- 1993-08-09 US US08/103,142 patent/US5458912A/en not_active Expired - Fee Related
-
1994
- 1994-02-22 EP EP94301222A patent/EP0615000B1/en not_active Expired - Lifetime
- 1994-02-22 DE DE69426998T patent/DE69426998T2/de not_active Expired - Fee Related
- 1994-03-08 JP JP6036861A patent/JPH06345417A/ja active Pending
- 1994-03-08 KR KR1019940004426A patent/KR100313383B1/ko not_active IP Right Cessation
- 1994-11-07 US US08/334,988 patent/US5710203A/en not_active Expired - Fee Related
- 1994-11-30 US US08/346,651 patent/US5635249A/en not_active Expired - Fee Related
-
1995
- 1995-06-02 US US08/459,862 patent/US5541248A/en not_active Expired - Fee Related
-
1997
- 1997-09-29 US US08/939,833 patent/US5916944A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06345417A (ja) | 1994-12-20 |
US5635249A (en) | 1997-06-03 |
US5710203A (en) | 1998-01-20 |
KR100313383B1 (ko) | 2001-12-28 |
US5916944A (en) | 1999-06-29 |
DE69426998T2 (de) | 2001-10-31 |
US5387480A (en) | 1995-02-07 |
US5458912A (en) | 1995-10-17 |
EP0615000B1 (en) | 2001-04-04 |
EP0615000A1 (en) | 1994-09-14 |
DE69426998D1 (de) | 2001-05-10 |
US5541248A (en) | 1996-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940021686A (ko) | 하이드로겐 실세스퀴옥산 수지와 충전제를 포함하는 조성물을 사용하여 피복물을 형성시키는 방법 | |
KR950008432A (ko) | Si-O 함유 피막의 형성방법 | |
US5436084A (en) | Electronic coatings using filled borosilazanes | |
US5776235A (en) | Thick opaque ceramic coatings | |
US5436083A (en) | Protective electronic coatings using filled polysilazanes | |
DE3789606T2 (de) | Mehrschichtige Keramik aus hydrogeniertem Silsequioxan. | |
JP2591863B2 (ja) | 超小形電子デバイスおよび基材用コーティング | |
KR950008433A (ko) | Si-O 함유 피복물을 형성시키는 방법 | |
KR880008439A (ko) | 실리케이트 에스테르로부터의 다중층 세라믹 | |
KR890016627A (ko) | 세라믹 피복물을 기판위에 형성하는 방법 | |
KR100249750B1 (ko) | 방습성질화알루미늄분말의제조방법및이러한방법으로제조한분말 | |
KR970052882A (ko) | 전자 비임에 의한 수소 실세스퀴옥산 수지의 경화법 | |
EP0986438B1 (de) | Verfahren zum beschichten einer oberfläche | |
US5935638A (en) | Silicon dioxide containing coating | |
KR890011070A (ko) | 세라믹 피복물을 지지체위에 형성하는 방법 | |
JPH0922903A (ja) | エレクトロニクス用基板へのコーティング方法及びコーティング組成物 | |
JP2005508420A5 (ko) | ||
EP1003210A3 (en) | A method of forming coatings | |
KR920009891A (ko) | 수소 실세스퀴옥산 수지 분획 및 피복재료로서의 이의 용도 | |
US5789325A (en) | Coating electronic substrates with silica derived from polycarbosilane | |
US5492958A (en) | Metal containing ceramic coatings | |
US20100249306A1 (en) | Hydrophobic surface coating for electronic and electro-technical components and uses thereof | |
US20020037369A1 (en) | Coating composition for producing electrically conductive coatings | |
JPH0196265A (ja) | コーティング剤 | |
KR20200035573A (ko) | 열전도성과 소수성을 갖는 코팅액 및 그를 이용한 코팅막 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |