KR940012051A - How to remove polymer generated during poly etching - Google Patents

How to remove polymer generated during poly etching Download PDF

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Publication number
KR940012051A
KR940012051A KR1019920020456A KR920020456A KR940012051A KR 940012051 A KR940012051 A KR 940012051A KR 1019920020456 A KR1019920020456 A KR 1019920020456A KR 920020456 A KR920020456 A KR 920020456A KR 940012051 A KR940012051 A KR 940012051A
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South Korea
Prior art keywords
etching
plasma
polymer
rie
generated during
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KR1019920020456A
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Korean (ko)
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KR960006171B1 (en
Inventor
김승기
김영서
정호기
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019920020456A priority Critical patent/KR960006171B1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 고집적 반도체 소자의 제조방법에 있어서, RIE방법으로 폴리식각시 생성되는 폴리머가 RIE 반응기에 침착되어 반도체 소자의 수율을 저하시키는 것을 해결하기 위해 소정의 공정 (5세트 정도의 식각공정)을 행한 RIE반응기에 본 발명의 3단계 공정을 통해 침착된 폴리머를 제거하는 기술이다.In the method of manufacturing a highly integrated semiconductor device, a predetermined process (about 5 sets of etching processes) is performed in order to solve the problem that the polymer produced during poly etching by the RIE method is deposited in the RIE reactor to reduce the yield of the semiconductor device. It is a technique for removing the polymer deposited in the RIE reactor performed in the three step process of the present invention.

Description

폴리식각시 생성되는 폴리머 제거방법How to remove polymer generated during poly etching

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 제1D도는 폴리식각시 반응기에 침착된 폴리머가 반도체 소자에 떨어진 반응성 폴리잔여물(Poly Residue)을 생성하는 단계를 도시한 단면도.1A and 1D are cross-sectional views illustrating a step in which a polymer deposited in a reactor upon polyetching generates reactive poly residues dropped on a semiconductor device.

Claims (4)

RIE 방법으로 폴리실리콘을 식각할때 생성되는 폴리머가 RIE 반응기에 침착되는데, 이 침착된 폴리머를 제거하기 위하여, RIE 반응기 내에서 5세트의 시각공정을 실시한 다음, 비어있는 RIE 반응기에 CHF3/He가스를 베이로한 플라즈마를 발생시켜 폴리식각시 발생한 클로로-카본 폴리머를 안정된 화합물인 하이드로 -카본 폴리머로 변화시키는 단계와, 산소플라즈마를 실시하여 RIE 반응기에 남아있는 클로로-카본 폴리머를 제거하는 단계와, Cl2/He가스를 베이스로 한 플라즈마를 발생시켜 RIE 반응기를 안정화시키는 단계로 이루어지는 것을 특징으로 하는 폴리식각시 생성되는 폴리머 제거방법.The polymer produced when etching polysilicon by the RIE method is deposited in the RIE reactor. In order to remove the deposited polymer, five sets of visual processes are performed in the RIE reactor, and then CHF 3 / He in an empty RIE reactor. Generating a gas-based plasma to convert the chloro-carbon polymer generated during poly etching into a hydro-carbon polymer, which is a stable compound, and performing an oxygen plasma to remove the chloro-carbon polymer remaining in the RIE reactor; And stabilizing the RIE reactor by generating a plasma based on Cl 2 / He gas. 제1항에 있어서, 상기 CHF3/He 가스를 베이스로한 플라즈마는 30-100He/10-50CHF330-80mTorr/500-1500watt의 조건에서 발생시킨 것을 특징으로 하는 폴리식각시 생성되는 폴리머 제거방법.The method of claim 1, wherein the plasma based on the CHF 3 / He gas is generated in a poly-etching process, characterized in that generated under the conditions of 30-100He / 10-50CHF 3 30-80mTorr / 500-1500watt. . 제1항에 있어서, 상기 산소(O2) 플라즈마는 10-10002/30-100He/ 10-50mTorr/-100- -500Vdc/500-2500watt의 조건에서 발생시킨 것을 특징으로 하는 롤리식각시 생성되는 폴리식각시 생성되는 폴리머 제거방법.The method of claim 1, wherein the oxygen (O 2 ) plasma is generated during the Raleigh etching, characterized in that generated under the conditions of 10-1000 2 / 30-100He / 10-50mTorr / -100- -500Vdc / 500-2500watt Method of removing polymer generated during poly etching. 제1항에 있어서, 상기 C12/He 가스를 베이스로한 플라즈마는 40-100He/10-80He/10-50C12/10-50CF4/10-100mTorr/-100- -300Vdc/1000-3000watt에서 발생시킨 것을 특징으로 하는 폴리식각시 생성되는 폴리머 제거방법.The method of claim 1, wherein the C1 2 / He gas-based plasma is 40-100 He / 10-80 He / 10-50 C 1 2 /10-50 CF 4 /10-100 mTorr /-100--300 Vdc / 1000-3000 watt Method of removing a polymer produced during poly-etching, characterized in that generated. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920020456A 1992-11-02 1992-11-02 Method of eliminating chlorocarbon polymer KR960006171B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920020456A KR960006171B1 (en) 1992-11-02 1992-11-02 Method of eliminating chlorocarbon polymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920020456A KR960006171B1 (en) 1992-11-02 1992-11-02 Method of eliminating chlorocarbon polymer

Publications (2)

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KR940012051A true KR940012051A (en) 1994-06-22
KR960006171B1 KR960006171B1 (en) 1996-05-09

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Application Number Title Priority Date Filing Date
KR1019920020456A KR960006171B1 (en) 1992-11-02 1992-11-02 Method of eliminating chlorocarbon polymer

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KR960006171B1 (en) 1996-05-09

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