KR930022651A - 반도체 레이저 다이오드 - Google Patents

반도체 레이저 다이오드 Download PDF

Info

Publication number
KR930022651A
KR930022651A KR1019920006125A KR920006125A KR930022651A KR 930022651 A KR930022651 A KR 930022651A KR 1019920006125 A KR1019920006125 A KR 1019920006125A KR 920006125 A KR920006125 A KR 920006125A KR 930022651 A KR930022651 A KR 930022651A
Authority
KR
South Korea
Prior art keywords
active layer
layer
band
laser diode
semiconductor laser
Prior art date
Application number
KR1019920006125A
Other languages
English (en)
Other versions
KR950008863B1 (ko
Inventor
안도열
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019920006125A priority Critical patent/KR950008863B1/ko
Priority to US08/046,451 priority patent/US5410562A/en
Publication of KR930022651A publication Critical patent/KR930022651A/ko
Application granted granted Critical
Publication of KR950008863B1 publication Critical patent/KR950008863B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 종래의 레이저 다이오드에서 활성층의 폭이 0.1㎛이상으로 두껍기 때문에 격자정합을 위해 활성층의 인듐(In) 함량을 0.5로 하였기에 670~690㎚ 대역의 파장으로 제한되었고, 활성층에 4원 화합물을 사용하면 630㎚ 대역까지 단파장을 얻을 수 있으나, 활성층과 클래드층간의 밴드간격이 적어져서 누설전류가 커지고 온도특성이 열악해지는 문제점이 해결하기 위한 것으로, 활성층과 클래등층과의 에너지 간격을 유지한 채 활성층의 원자간격이 클래드층의 원자간격 보다 적게 한 텐셜-스트레인을 갖도록 하고 활성층의 폭은 탄성한계를 넘지 못하게 양자우물층을 형성하고 580㎚ 대역까지 단파장을 얻을 수 있도록 한 것이다.
따라서 같이 면적의 광자기 디스크에 수록될 수 있는 정보량을 33% 증가시킬 수 있고, 낮은 임계전류 및 보다 좋은 열 특성을 갖게 되는 효과가 있다.

Description

반도체 레이저 다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 레이저 다이오드의 구조단면도.
제3도는 본 발명에 따른 밴드구조 및 밴드 갭의 변화도.
제4도는 본 발명에 따른 광이득 변화도.

Claims (2)

  1. Inx Ga1-xP를 활성층으로 하고 Iny[Alz Ga1-z]1-yP를 클래층으로 하는 레이저 다이오드에 있어서, 활성층의 원자간격이 클래드층의 원자간격 보다 작도록 형성하고 활성층의 폭은 탄성한계내가 되도록 함을 특징으로 하는 반도체 레이저 다이오드.
  2. 제1항에 있어서, 클래드층의 인듐(In) 함량(y)는 0.5로 하고, 알루미늄(Al) 함량(Z)은 0.3~0.7로 하고 활성층의 인듐(In) 함량(x)은 0.3~0.4로 하며 활성층의 폭을 40~200Å로 함을 특징으로 하는 반도체 레이저 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920006125A 1992-04-13 1992-04-13 반도체 레이저 다이오드 KR950008863B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019920006125A KR950008863B1 (ko) 1992-04-13 1992-04-13 반도체 레이저 다이오드
US08/046,451 US5410562A (en) 1992-04-13 1993-04-13 Strained quantum well semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920006125A KR950008863B1 (ko) 1992-04-13 1992-04-13 반도체 레이저 다이오드

Publications (2)

Publication Number Publication Date
KR930022651A true KR930022651A (ko) 1993-11-24
KR950008863B1 KR950008863B1 (ko) 1995-08-08

Family

ID=19331702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920006125A KR950008863B1 (ko) 1992-04-13 1992-04-13 반도체 레이저 다이오드

Country Status (2)

Country Link
US (1) US5410562A (ko)
KR (1) KR950008863B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5090790A (en) * 1990-06-29 1992-02-25 At&T Bell Laboratories Polarization-independent semiconductor waveguide
US5079774A (en) * 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser

Also Published As

Publication number Publication date
US5410562A (en) 1995-04-25
KR950008863B1 (ko) 1995-08-08

Similar Documents

Publication Publication Date Title
ATE452445T1 (de) Nitridhalbleiterlaserelement
KR870001687A (ko) 반도체 레이저
KR890003050A (ko) 적외발광소자
US4674094A (en) Semiconductor laser with an active layer having varying thicknesses
KR880003459A (ko) 반도체 레이저 장치
KR870002669A (ko) 반도체 레이저다이오드
KR930022651A (ko) 반도체 레이저 다이오드
JPS5637687A (en) Semiconductor laser device
KR940019019A (ko) 청색 반도체 레이저 다이오드
US5253265A (en) Semiconductor laser device
JPH04114486A (ja) 半導体レーザ
KR920011003A (ko) 화합물 반도체 레이저
JPS6184891A (ja) 半導体レ−ザ素子
KR930015216A (ko) 반도체 레이저의 구조
KR970060603A (ko) 높은 주변 온도에서도 저잡음으로 동작이 가능한 반도체 레이저 디바이스
KR950010202A (ko) 레이저 다이오드
JP3138095B2 (ja) 半導体レーザ素子
KR970013538A (ko) 반도체 레이저 다이오드
JPS61228692A (ja) 半導体レ−ザ
KR860001502A (ko) 반도체레이저
JPH0394490A (ja) 半導体レーザ素子
KR960043385A (ko) 반도체 레이저 다이오드
KR970018878A (ko) 반도체 레이저
KR920005413A (ko) 고출력 레이저 다이오드
KR910005532A (ko) 반도체 레이저

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20041022

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee