KR930015103A - Ccd 영상소자 제조방법 - Google Patents

Ccd 영상소자 제조방법 Download PDF

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Publication number
KR930015103A
KR930015103A KR1019910023862A KR910023862A KR930015103A KR 930015103 A KR930015103 A KR 930015103A KR 1019910023862 A KR1019910023862 A KR 1019910023862A KR 910023862 A KR910023862 A KR 910023862A KR 930015103 A KR930015103 A KR 930015103A
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KR
South Korea
Prior art keywords
forming
ion implantation
channel region
ccd image
device manufacturing
Prior art date
Application number
KR1019910023862A
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English (en)
Other versions
KR940010932B1 (ko
Inventor
손동균
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910023862A priority Critical patent/KR940010932B1/ko
Priority to TW081109797A priority patent/TW253995B/zh
Priority to JP35498992A priority patent/JP3292962B2/ja
Priority to DE4243066A priority patent/DE4243066A1/de
Publication of KR930015103A publication Critical patent/KR930015103A/ko
Application granted granted Critical
Publication of KR940010932B1 publication Critical patent/KR940010932B1/ko
Priority to US08/569,317 priority patent/US5578511A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명에 따르면 CCD 영상소자의 HCCD 영역에서의 전하 전송효율을 높이기 위해 HCCD의 채널영역안에 전위장벽을 형성하기 위한 이온주입을 실시하고 또한 2중 계단구조를 만들기 위해 게이트전극 하측 모서리 부분에 경사이온주입을 실시한다.
따라서 전하 전송효율을 종전보다 향상시킨다.

Description

CCD 영상소자 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따른 CCD영상소자의 HCCD의 출력다 구조단면도 및 전위 윤곽도.

Claims (2)

  1. 반도체 기판위에 소정도전형의 웰을 형성시킨후 반도체 기판과 동형의 채널영역을 형성시키는 공정과, 상기 채널영역위에 복수개의 게이트전극을 형성시키는 공정과, 상기 채널영역안에 1차 전위장벽을 형성하기 위한 이온주입을 실시하기 위한 공정과, 상기 복수개의 게이트전극 하측 모서리부분에 2차 저위장벽을 형성하기 위한 경사이온주입을 실시하는 공정을 차례로 실시함을 특징으로 하는 CCD 영상소자 제조방법.
  2. 제1항에 있어서, 2차 전위 장벽을 형성하기 위한 경사이온주입은 반도체 기판의 수평선을 기준으로 30∼60°의 각도로 상기 게이트의 양측 중 일측만을 반복하여 이온주입함을 특징으로 하는 CCD영상소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023862A 1991-12-23 1991-12-23 Ccd영상소자 제조방법 KR940010932B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910023862A KR940010932B1 (ko) 1991-12-23 1991-12-23 Ccd영상소자 제조방법
TW081109797A TW253995B (ko) 1991-12-23 1992-12-07
JP35498992A JP3292962B2 (ja) 1991-12-23 1992-12-18 信号電荷転送装置の製造方法
DE4243066A DE4243066A1 (en) 1991-12-23 1992-12-18 Signal charge transfer device for CCD or contact image sensor - with multistep impurity zone under each 2nd electrode for high charge transfer efficiency without shortening electrode
US08/569,317 US5578511A (en) 1991-12-23 1995-12-08 Method of making signal charge transfer devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023862A KR940010932B1 (ko) 1991-12-23 1991-12-23 Ccd영상소자 제조방법

Publications (2)

Publication Number Publication Date
KR930015103A true KR930015103A (ko) 1993-07-23
KR940010932B1 KR940010932B1 (ko) 1994-11-19

Family

ID=19325533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023862A KR940010932B1 (ko) 1991-12-23 1991-12-23 Ccd영상소자 제조방법

Country Status (5)

Country Link
US (1) US5578511A (ko)
JP (1) JP3292962B2 (ko)
KR (1) KR940010932B1 (ko)
DE (1) DE4243066A1 (ko)
TW (1) TW253995B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390836B1 (ko) * 2000-12-30 2003-07-10 주식회사 하이닉스반도체 포토다이오드의 용량을 증가시키면서 전하운송을 향상시킬수 있는 이미지 센서 제조 방법
KR100883758B1 (ko) * 2002-07-19 2009-02-12 매그나칩 반도체 유한회사 전하운송효율과 암전류 특성을 향상시킨 이미지센서 및 그제조방법

Families Citing this family (12)

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KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
JP2965061B2 (ja) * 1996-04-19 1999-10-18 日本電気株式会社 電荷結合素子およびその製造方法
US5793070A (en) * 1996-04-24 1998-08-11 Massachusetts Institute Of Technology Reduction of trapping effects in charge transfer devices
KR100215882B1 (ko) * 1996-05-16 1999-08-16 구본준 고체촬상소자 제조방법
FR2771217B1 (fr) * 1997-11-14 2000-02-04 Thomson Csf Dispositif semiconducteur a transfert de charges
KR100359767B1 (ko) * 1998-07-11 2002-11-07 주식회사 하이닉스반도체 고체촬상소자의 제조 방법
JP2004518296A (ja) * 2001-01-23 2004-06-17 ダルサ、コーポレーション 電荷結合デバイス
TW589753B (en) * 2003-06-03 2004-06-01 Winbond Electronics Corp Resistance random access memory and method for fabricating the same
JP2005216899A (ja) * 2004-01-27 2005-08-11 Elpida Memory Inc 半導体装置の製造方法
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JP5428491B2 (ja) * 2009-04-23 2014-02-26 ソニー株式会社 固体撮像装置の製造方法
WO2014200460A1 (en) * 2013-06-10 2014-12-18 Empire Technology Development Llc Graded structure films

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US4994875A (en) * 1978-05-16 1991-02-19 Texas Instruments Incorporated Virtual phase charge transfer device
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390836B1 (ko) * 2000-12-30 2003-07-10 주식회사 하이닉스반도체 포토다이오드의 용량을 증가시키면서 전하운송을 향상시킬수 있는 이미지 센서 제조 방법
KR100883758B1 (ko) * 2002-07-19 2009-02-12 매그나칩 반도체 유한회사 전하운송효율과 암전류 특성을 향상시킨 이미지센서 및 그제조방법

Also Published As

Publication number Publication date
JPH06181226A (ja) 1994-06-28
US5578511A (en) 1996-11-26
DE4243066A1 (en) 1993-06-24
TW253995B (ko) 1995-08-11
JP3292962B2 (ja) 2002-06-17
KR940010932B1 (ko) 1994-11-19

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