KR920704180A - 술폰화된 폴리아닐린 염 조성물, 이것의 제조 방법 및 용도 - Google Patents
술폰화된 폴리아닐린 염 조성물, 이것의 제조 방법 및 용도Info
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- KR920704180A KR920704180A KR1019920700891A KR920700891A KR920704180A KR 920704180 A KR920704180 A KR 920704180A KR 1019920700891 A KR1019920700891 A KR 1019920700891A KR 920700891 A KR920700891 A KR 920700891A KR 920704180 A KR920704180 A KR 920704180A
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Abstract
내용 없음
Description
술폰화된 폴리아닐린 염 조성물, 이것의 제조 방법 및 용도
[도면의 간단한 설명]
제1도는, (a) 자체-도우핑된 술폰화된 폴리아닐린; (b) 술폰화된 폴리아닐린의 어미 중합체인 에머럴딘 염기의 FTIR 스펙트럼을 파수(cm-1)로 나타낸 그래프이다.
제2도는, (a)…석영 기판에 NH4OH 수용액으로 부터 캐스팅된 후, 공기 중에서 건조된 술폰화된 폴리아닐린 막(0.1 NH4OH 에서 3.88 및 2.16 eV에서 피이크); (b)-NMP중의 에머럴딘 염 막(3.76 및 2.0 eV에서 피이크)의 전자 흡수 스펙트럼을 나타낸 그래프이다.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (22)
- 하기 일반식(I)의 화학적 조성을 갖는 술폰화된 폴리아닐린 조성물:상기식에서, 0≤y≤1 이고, R1, R2, R3, R4,R5및 R6는 독립적으로 H, -SO3H, -R7SO3H -SO3M, -R7SO3M, -OCH3, -CH3, -C2H5, -F, -Cl, -Br, -I, -NR7 2,-NHCOR7,-OH, -O-, -SR7, -OR7, -OCOR7, -NO2, -COOH, -COOR7, -COR7, -CHO 및 -CN으로 구성된 군으로 부터 선택되고, 여기에서 R7은 C1-C8-알킬, 아릴 또는 아릴킬기이고, M은 양이온이며, X는 -SO3-기를 갖는 페닐 또는 퀴노이드 고리의 분율이고, Z는 M양이노을 갖는 상기 페널 또는 퀴노이드 고리의 분율이며; Z가 X보다 작을때, 조성물은 도체이고, Z가 X에 근접함에 따라 조성물은 비전도성이 된다.
- 제1항에 있어서, -SO3M 또는 -R7SO3M인 R1, R2, R3또는 R4기중 적어도 하나릍 함유하는 고리의 분율이 20%로 부터 100%까지 변화됨을 특징으로 하는 조성물.
- 제1항에 있어서, 술폰화뒨 폴리아닐린 조성물의 분자량이 300(술폰화된 폴리아닐린의 올리고머) 내지 100,000 이상임을 특징으로 하는 조성물.
- 제1항에 있어서, R1이 -SO3M 및 -R7SO3M으로 구성된 군으로 부터 선택되고, R2=R3=R4=H이고, y는 약 0.5임을 특징으로 하는 조성물.
- 제1항에 있어서, M이 Li+, Na+, K+, Rb+, Cs+, MH4 +, Ca++, 및 Ba++로 구성된 군으로 부터 선택됨을 특징으로 하는 조성물.
- 제1항에 있어서, Z=1 임을 특징으로 하는 조성물.
- 자체-도우핑된 술폰화된 폴리아닐린 중합체를 염기성 수용액과 반응시키는 것으로 이루어지는 제1항이 폴리아닐린 조성물을 제조하는 방법.
- 제7항에 있어서, 반응이 실온에서 수행됨을 특징으로 하는 방법.
- 제7항에 있어서, 반응이 공기 중에서 수행됨을 특징으로 하는 방법.
- 제7항에 있어서, 폴리아닐린 조성물이, 반응하는 동안 길이가 감소하지 않는 사전 결정된 사슬 길이를 가짐을 특징으로 하는 방법.
- 자체-도우핑된 술폰화된 조성물을 만드는 데이 있어서 중간 물질로서 사용하기 위한 일반식(I)의 술폰화된 폴리아닐린 염 조성물.
- (a) 술폰화된 폴리아닐린 염 조성물을 물에 용해시키고; (b) 용해된 술폰화된 폴리아닐린 염 조성물을 기판에 도포시키고; (c) 술폰화된 폴리아닐린 염 조성물을 산으로 세척함으로써 자체-양성자 첨가된 폴리아닐린 조성물로 전환시키는 것으로 이루어지는, 자체-양성자 첨가된 술폰화된 폴리아닐린 조성물을 만드는 데에 있어서 중간 물질로서 일반식(I)의 술폰화된 폴리아닐린 염 조성물을 사용하는 방법.
- 전자기 복사가 일반적으로 1000Å 내지 50m의 파장을 갖고 조성물이 일반식(I)의 술폰화된 폴리아닐린염 조성물로 이루어지는 전자기 복사를 흡수하기 위한 조성물.
- 일반식(I)의 술폰화된 폴리아닐린 염 조성물을 전자기 복사에 노출시키고, 이것에 의해 전자기 복사를 술폰화된 폴리아닐린 조성물에 흡수시키는 것으로 이루어지는, 전자기 복사를 흡수하는 방법.
- (a) 술폰화된 폴리아닐린 염 조성물을 제1 및 제2광 투과성 기판사이에 도포시켜서, 술폰화된 염 조성물을 광 투과성 기판 둘 모두에 접촉시키고; (b) 제1광 투과성 기판을 통해 광 신호를 유도시키고; (c) 술폰화된 폴리아닐린 염 조성물의 굴절 지수를 변화시키기에 충분한 세기 및 파장의 광에 술폰화된 폴리아닐린 염 조성물을 노출시켜서, 제1광 투과성 기판으로 부터 유도된 광 신호가 술폰화된 폴리아닐린 염 조성물을 통해 제2광 투과성 기판으로 커플링되게 하고, 이것에 의해 광 신호를 제2광 투과성 기판을 통해 투과시키는 것으로 기판으로 부터 다른 하나의 광 투과성 기판으로 광 신호를 커플링시키는 방법.
- Z가 1이 아닌, 마이크로파의 전파 경로에 위치한 일반식(I)의 일단의 전자기 복사 흡수성 폴리아닐린염 조성물로 이루어지는 마이크로파 감쇄기.
- (a) 술폰화된 폴리아닐린 염 조성물로 이루어지는 회진 광학 디스크; (b) 정보의 쓰기 비트를 의한 쓰기 레이저 및 거울의 결합물 ;(c) 광 유도된 정보를 읽기 위한 읽기 레이저 및 거울의 결합물; (d) 정보의 비트식 소거를 위한 소거 레이저 및 거울의 결합물;및 (e) 기억된 정보를 출력시키기 위한 검파기로 이루어지는 소거성 광학 정보 기억 장치.
- (a) 100K이하의 온도에서 술폰화된 폴리아닐린 염 조성물의 막으로 부분적으로 이루어진 기억 장치를 유지시키고; (b) 술폰화된 폴리아닐린 염 막의 광 흡수 특성을 변화시키기 위해 공지된 광 주파수 및 세기를 갖는, 정보 또는 데이타를 표시하는 쓰기 비임에 기억 장치를 노출시키고; (c) 막의 변화된 광 흡수 스펙트럼에 부합시키기 위해 사전 결정된 제2의 공지된 광 주파수 및 세기를 갖는 읽기 비임에 기억 장치를 노출시키고, 이것에 의해, 변화된 광 흡수 스펙트럼으로 부터 정보 또는 데이타를 검색하는 것으로 이루어지는, 광학적 고밀도 소거성 형식으로 정보를 기억시키고 검색하는 방법.
- 제18항에 있어서, 쓰기 비임이 632.8nm에서 작용하는 헬륨-네온 레이저에 의해 생성된 초점 조정 비임이고, 기억 장치가 술폰화된 폴리아닐린 염 조성물로 이루어진 1미크론 이하의 얇은 막을 부분적으로 포함하고 읽기 비임이 800nm 또는 1550nm에서 작용하는 반도체 다이오드 레이저에 의해 생성됨을 특징으로 하는 방법.
- (a) 일반식(I)의 술폰화된 폴리아닐린 염 조성물의 막의 두꺼운 시편을 카프톤 또는 폴리카아보네이트와 같은 투명한 호스트 중합체에 분산시키고; (b) 술폰화된 폴리아닐린 염 막에서 2개의 광선을 초점 조정하여, 술폰화된 폴리아닐린 염 막을 사용하여 초점 조정된 광선 사이의 계면 패턴을 만들고; (c) 술폰화된 폴리아닐린 염 막을 쓰기 비임에 노출시키는 것으로 이루어지는, 3차원 홀로그래프 격자를 생성하는 방법.
- 제20항에 있어서, 2개의 초점 조정된 광선이 632.8nm에서 작용하는 저-동력 헬륨-네온 례이저에 의해 생성되고, 읽기 비임이 800mn,1300mn 또는 1550nm에서 작용하는 반도체 다이오드 레이저에 의해 생성됨을 특징으로 하는 방법.
- (a) 일반식(I)의 술폰화된 폴리아닐린 염 조성물의 폴리오르토 톨루이딘 및 나프탈 전환물의 막으로 부분적으로 이루어진 기억 장치를 제공하고; (b) 술폰화된 폴리아닐린 염 막의 광 흡수 특성을 변화시키기 위해 공지된 광 주파수 및 세기를 갖는, 정보 및 데이타를 표시하는 쓰기 비임에 기억장치를 노출시키고; (c) 술폰화된 폴리아닐린 염 막의 변화된 광 흡수 스펙트럼에 부합시키기 위해 사진 결정된 제2의 공지된 광 주파수 및 세기를 갖는 읽기 비임에 기억 장치를 노출시키고, 이것에 의해, 변화된 광 흡수 스펙트럼으로 부터 정보 또는 데이타를 검색하는 것으로 이루어지는, 광학적 고밀도 소거성 형식으로 데이타 또는 정보를 기억시키고 검색하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/426,959 US5164465A (en) | 1988-05-13 | 1989-10-24 | Sulfonated polyaniline salt compositions, processes for their preparation and uses thereof |
US426,959 | 1989-10-24 | ||
PCT/US1990/006118 WO1991006887A1 (en) | 1989-10-24 | 1990-10-23 | Sulfonated polyaniline salt compositions, processes and uses |
Publications (1)
Publication Number | Publication Date |
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KR920704180A true KR920704180A (ko) | 1992-12-19 |
Family
ID=23692891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920700891A KR920704180A (ko) | 1989-10-24 | 1990-10-23 | 술폰화된 폴리아닐린 염 조성물, 이것의 제조 방법 및 용도 |
Country Status (12)
Country | Link |
---|---|
US (1) | US5164465A (ko) |
EP (1) | EP0497898B1 (ko) |
JP (1) | JP2953671B2 (ko) |
KR (1) | KR920704180A (ko) |
AT (1) | ATE161653T1 (ko) |
AU (1) | AU643918B2 (ko) |
CA (1) | CA2067168C (ko) |
DE (1) | DE69031867T2 (ko) |
DK (1) | DK0497898T3 (ko) |
ES (1) | ES2113351T3 (ko) |
GR (1) | GR3026288T3 (ko) |
WO (1) | WO1991006887A1 (ko) |
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-
1989
- 1989-10-24 US US07/426,959 patent/US5164465A/en not_active Expired - Lifetime
-
1990
- 1990-10-23 KR KR1019920700891A patent/KR920704180A/ko not_active Application Discontinuation
- 1990-10-23 AT AT90917102T patent/ATE161653T1/de not_active IP Right Cessation
- 1990-10-23 JP JP51586090A patent/JP2953671B2/ja not_active Expired - Lifetime
- 1990-10-23 ES ES90917102T patent/ES2113351T3/es not_active Expired - Lifetime
- 1990-10-23 EP EP19900917102 patent/EP0497898B1/en not_active Expired - Lifetime
- 1990-10-23 DK DK90917102T patent/DK0497898T3/da active
- 1990-10-23 AU AU67316/90A patent/AU643918B2/en not_active Expired
- 1990-10-23 WO PCT/US1990/006118 patent/WO1991006887A1/en active IP Right Grant
- 1990-10-23 DE DE1990631867 patent/DE69031867T2/de not_active Expired - Lifetime
- 1990-10-23 CA CA 2067168 patent/CA2067168C/en not_active Expired - Fee Related
-
1998
- 1998-03-06 GR GR980400459T patent/GR3026288T3/el unknown
Also Published As
Publication number | Publication date |
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EP0497898B1 (en) | 1997-12-29 |
CA2067168C (en) | 2001-03-13 |
AU6731690A (en) | 1991-05-31 |
AU643918B2 (en) | 1993-11-25 |
WO1991006887A1 (en) | 1991-05-16 |
DE69031867D1 (de) | 1998-02-05 |
ES2113351T3 (es) | 1998-05-01 |
DE69031867T2 (de) | 1998-09-03 |
EP0497898A4 (en) | 1993-01-07 |
JP2953671B2 (ja) | 1999-09-27 |
JPH05503953A (ja) | 1993-06-24 |
CA2067168A1 (en) | 1991-04-25 |
US5164465A (en) | 1992-11-17 |
ATE161653T1 (de) | 1998-01-15 |
EP0497898A1 (en) | 1992-08-12 |
DK0497898T3 (da) | 1998-08-31 |
GR3026288T3 (en) | 1998-06-30 |
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