KR920008963A - Channel Doping Method of MOS Transistor - Google Patents

Channel Doping Method of MOS Transistor Download PDF

Info

Publication number
KR920008963A
KR920008963A KR1019900017419A KR900017419A KR920008963A KR 920008963 A KR920008963 A KR 920008963A KR 1019900017419 A KR1019900017419 A KR 1019900017419A KR 900017419 A KR900017419 A KR 900017419A KR 920008963 A KR920008963 A KR 920008963A
Authority
KR
South Korea
Prior art keywords
mos transistor
channel
doping method
channel doping
doping
Prior art date
Application number
KR1019900017419A
Other languages
Korean (ko)
Inventor
조현태
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900017419A priority Critical patent/KR920008963A/en
Publication of KR920008963A publication Critical patent/KR920008963A/en

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

MOS트랜시스터의 채널도핑방법Channel Doping Method of MOS Transceiver

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 MOS트랜지스터의 채널도핑 공정을 나타낸 단면도.3 is a cross-sectional view showing a channel doping process of a MOS transistor according to the present invention.

Claims (2)

반도체기판에 형성된 소스 및 드레인 영역과, 상기 소스 및 드레인 영역사이에 채널영역을 가지는 MOS트랜지스터의 채널도핑방법에 있어서, 상기 채널영역에만 국한하여 채널 스레쉬홀드전압 조정용 불순물을 도핑하는 것을 특징으로 하는 MOS 트랜지스터의 채널도핑방법.A channel doping method of a MOS transistor having a source and a drain region formed in a semiconductor substrate and a channel region between the source and drain regions, wherein the doping impurities for channel threshold voltage adjustment are limited to only the channel region. Channel Doping Method of MOS Transistors. 제1항에 있어서, 상기 불순물도핑은 상기 MOS트랜지스터의 게이트전극층 마스크패턴의 역패턴을 사용하여 도핑하는 것을 특징으로 하는 MOS트랜지스터의 채널도핑방법.The method of claim 1, wherein the doping of the impurity is performed using an inverse pattern of the mask pattern of the gate electrode layer of the MOS transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900017419A 1990-10-30 1990-10-30 Channel Doping Method of MOS Transistor KR920008963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900017419A KR920008963A (en) 1990-10-30 1990-10-30 Channel Doping Method of MOS Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017419A KR920008963A (en) 1990-10-30 1990-10-30 Channel Doping Method of MOS Transistor

Publications (1)

Publication Number Publication Date
KR920008963A true KR920008963A (en) 1992-05-28

Family

ID=67739291

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017419A KR920008963A (en) 1990-10-30 1990-10-30 Channel Doping Method of MOS Transistor

Country Status (1)

Country Link
KR (1) KR920008963A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505503B1 (en) * 1998-12-01 2005-11-30 주식회사 효성 Manufacturing method of gastric nylon Taesodo company by Piowai method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505503B1 (en) * 1998-12-01 2005-11-30 주식회사 효성 Manufacturing method of gastric nylon Taesodo company by Piowai method

Similar Documents

Publication Publication Date Title
KR850005163A (en) Manufacturing Method of Field Effect Transistor
KR920010955A (en) SOIMOS transistor
KR930022601A (en) Manufacturing Method of Semiconductor Device
KR920008963A (en) Channel Doping Method of MOS Transistor
KR940016937A (en) Morse transistor having a non-uniform doped channel using a trench structure and a method of manufacturing the same
KR920013776A (en) Field effect transistor
KR920013601A (en) MOS transistor manufacturing method
KR940016927A (en) Method of manufacturing MOS-FET with vertical channel using trench structure
KR950012645A (en) Method of manufacturing thin film transistor of semiconductor device
KR920020594A (en) LDD transistor structure and manufacturing method
KR920005363A (en) Manufacturing Method and Structure of MOS Transistor
KR920013767A (en) Method of manufacturing a hot carrier prevention transistor
KR970024260A (en) Transistors with Oxides Under Channel Region
KR940020599A (en) FIELD EFFECT TRANSISTOR
KR920013755A (en) Morse transistor using multi-gate and manufacturing method thereof
KR920015433A (en) MOS transistor process method
KR970008650A (en) Manufacturing method of MOS transistor
KR950030383A (en) Source / drain structure to prevent punchthrough
KR920013775A (en) Trench using transistor manufacturing method
KR970054422A (en) Field effect transistor
KR920015437A (en) MOS transistor
KR960039218A (en) Semiconductor device manufacturing method
KR930015081A (en) Shallow Bonded MOSFET Manufacturing Method
KR930005244A (en) Method of manufacturing trench type MOS transistor
KR970053040A (en) Manufacturing Method of CMOS Transistor

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
WITB Written withdrawal of application