KR950030383A - Source / drain structure to prevent punchthrough - Google Patents

Source / drain structure to prevent punchthrough Download PDF

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Publication number
KR950030383A
KR950030383A KR1019940007103A KR19940007103A KR950030383A KR 950030383 A KR950030383 A KR 950030383A KR 1019940007103 A KR1019940007103 A KR 1019940007103A KR 19940007103 A KR19940007103 A KR 19940007103A KR 950030383 A KR950030383 A KR 950030383A
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KR
South Korea
Prior art keywords
source
channel
doped
drain structure
region
Prior art date
Application number
KR1019940007103A
Other languages
Korean (ko)
Inventor
박윤수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940007103A priority Critical patent/KR950030383A/en
Publication of KR950030383A publication Critical patent/KR950030383A/en

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Abstract

본 발명은 트랜지스터의 소스/드레인 구조에 관한 것으로, 특히 전반적인 소스와 드레인영역(10)은 강하게 도핑 하고, 채널에 인접한 영역(20)은 약하게 도핑한 구조상에 상기 채널에 인접한 영역(20) 사이에 기판과 동일한 형의 불순물이 고농도로 도핑된 영역(30)이 형성되는 것을 특징으로 함으로써 본 발명은 단채널에 기인한 펀치스루 현상을 방지함으로써 소자의 전기적 특성 향상 및 수율 증대의 효과를 얻을 수 있다.The present invention relates to the source / drain structure of a transistor, in particular the overall source and drain regions 10 are strongly doped, and the region 20 adjacent to the channel is between the regions 20 adjacent to the channel on the slightly doped structure. By forming a region 30 doped with a high concentration of impurities of the same type as the substrate, the present invention can prevent the punch-through phenomenon caused by the short channel, thereby improving the electrical characteristics of the device and increasing the yield. .

Description

펀치스루 현상을 방지하기 위한 소스/드레인 구조Source / drain structure to prevent punchthrough

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 종래의 소스/드레인 구조 트랜지스터의 단면도.2 is a cross-sectional view of a conventional source / drain structure transistor.

Claims (1)

트랜지스터의 단채널에 기인한 펀치스루 현상을 방지하기 위한 소스/드레인 구조에 있어서, 전반적인 소스와 드레인영역(10)은 강하게 도핑 하고, 채널에 인접한 영역(20)은 약하게 도핑한 구조상에 상기 채널에 인접한 영역(20) 사이에 기판과 동일한 형의 불순물이 고농도로 도핑된 영역(30)이 형성되는 것을 특징으로 하는 펀치스루 현상을 방지하기 위한 소스/드레인 구조.In the source / drain structure for preventing the punch-through phenomenon caused by the short channel of the transistor, the overall source and drain regions 10 are strongly doped, and the region 20 adjacent to the channel is weakly doped in the channel. A source / drain structure for preventing a punch-through phenomenon, characterized in that a region (30) doped with a high concentration of impurities of the same type as a substrate is formed between adjacent regions (20). ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019940007103A 1994-04-04 1994-04-04 Source / drain structure to prevent punchthrough KR950030383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940007103A KR950030383A (en) 1994-04-04 1994-04-04 Source / drain structure to prevent punchthrough

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940007103A KR950030383A (en) 1994-04-04 1994-04-04 Source / drain structure to prevent punchthrough

Publications (1)

Publication Number Publication Date
KR950030383A true KR950030383A (en) 1995-11-24

Family

ID=66677696

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940007103A KR950030383A (en) 1994-04-04 1994-04-04 Source / drain structure to prevent punchthrough

Country Status (1)

Country Link
KR (1) KR950030383A (en)

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