KR920008212A - 코팅막의 제조방법 및 제조장치 - Google Patents

코팅막의 제조방법 및 제조장치 Download PDF

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KR920008212A
KR920008212A KR1019910018192A KR910018192A KR920008212A KR 920008212 A KR920008212 A KR 920008212A KR 1019910018192 A KR1019910018192 A KR 1019910018192A KR 910018192 A KR910018192 A KR 910018192A KR 920008212 A KR920008212 A KR 920008212A
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plasma
discharge
coating film
mixed layer
diamond
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KR940002751B1 (ko
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가즈아끼 구리하라
모또노부 가와라다
겐이찌 사사끼
아끼또모 데시마
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세끼사와 요시
후지쓰 가부시까가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

내용 없음

Description

코팅막의 제조방법 및 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 따른 두개의 DC 플라즈마 톨취를 가지는 성막의 단면도,
제2도는 본 발명의 또 다른 실시예에 따른 RF 플라즈마 톨취를 가지는 성막의 단면도,
제3도는 본 발명의 또다른 실시예에 따른 레이저 브레이크다운 플라즈마 톨취를 가지는 성막 장치의 단면도.

Claims (12)

  1. 플라즈마 분사 물질 및 다이아몬드의 혼합층을 형성하는 단계, 플라즈마 분사 톨취에 의하여 플라즈마 분사를 실시하는 단계, 동시에 기판상에 상기 혼합층을 형성하기 위하여 CVD 플라즈마 톨취에 의하여 플라즈마 CVD를 실시하는 단계로 이루어진 코팅막 제조방법.
  2. 제1항에 있어서, 코팅막이 플라즈마를 발생하기 위하여 DC방전, RF방전, 및 레이저 브레이크 다운 방전으로 이루어진 그룹으로부터 선택된 하나 이상의 부재를 사용하므로 상기 플라즈마 분사를 처리하고 플라즈마를 발생하기 위하여 DC방전 및 레이저 브레이크 다운 방전으로 이루어진 그룹으로부터 선택된 하나 이상의 부재를 사용하여 상기 플라즈마 CVD를 처리하여 생상된 코팅막 제조방법.
  3. 제2항에 있어서, 상기 플라즈마 분사가 플라즈마를 발생하기 위하여 RF방전 및 레이저 브레이크 다운 방전으로 이루어지는 그룹으로부터 선택된 하나 이상의 부재를 사용하여 처리되며 상기 플라즈마 CVD는 레이져 브레이크 다운 방전을 사용하여 처리되는 코팅막 제조방법.
  4. 플라즈마 분사 물질 및 다이아몬드의 혼합층을 형성하는 단계를 포함하며 RF 방전 및 레이저 브레이크 다운 방전 중 어느 하나를 사용하여 단일 플라즈마에 의하여 플라즈마를 발생하는 단계로 이루어지고 상기 혼합층을 형성하기 위하여 플라즈마 분사 및 플라즈마 CVD를 처리하는 코팅막 제조방법.
  5. 제1항에 있어서, 상기 플라즈마 분사가 와이어의 형성에서 플라즈마 분사 물질을 공급하는 동안 처리되는 코팅막 제조방법.
  6. 플라즈마 분사 물질 및 다이아몬드 혼합층을 형성하는 단계를 포함하고, 상기 혼합층을 형성하기 위하여 와이어의 형성에서 플라즈마 분사물질을 공급하는 동안 플라즈마 분사를 처리하는 단계를 함유함이 특징인 코팅막 제조방법.
  7. 플라즈마 분사 물질 및 다이아몬드의 혼합층이 형성 가능하며 배출 장치에 연결된 감압 챔버, 가스 공급 수단을 포함하는 다이아몬드 기상을 형성하는 것이 가능한 상기 감압 침버에 정돈된 첫번째 플라즈마 톨취, 플라즈마 분사 물질 공급 수단을 포함하는 플라즈마 분사를 처리 가능한 상기 감압 챔버에 정돈된 두번째 플라즈마 톨취로 이루어지는 코팅막 제조장치.
  8. 제7항에 있어서, 상기 첫번째 플라즈마 톨치는 DC방전 및 ㄹ이저 브레이크 다운 방전 중 어느 하나를 사용하여 플라즈마를 발생할 수 있는 플라즈마 톨취에 의하여 구성되며 상기 두번째 플라즈마 톨취는 DC 방전 및 RF방전 및 레이저 브레이크 다운 방전 중 어느 하나를 사용하여 플라즈마를 발생할 수 있는 플라즈마 톨취로 구성된 코팅막 제조장치.
  9. 제8항에 있어서, 상기 첫번째 플라즈마 톨취가 레이저 브레이크 다운 방전을 사용하여 발생할 수 있는 플라즈마 톨취에 의하여 구성되고 두번째 플라즈마 톨취가 RF 방전 및 레이저 브레이크 다운 방전 중 어느 하나를 사용하여 플라즈마를 발생할 수 있는 플라즈마 톨취에 의하여 구성된 코팅막 제조방법.
  10. 플라즈마 분사 물질 및 다이아몬드의 혼합층이 형성 가능하며 배출 장치에 연결된 감압 챔버 및 가스 공급수단 및 플라즈마 분사 물질 공급 수단을 가지며 다이아몬드 기상을 형성하고 플라즈마 분사 물질의 플라즈마 분사를 처리하기 위하여 RF 방전 및 레이저 브레이크 다운 방전 중 어느 하나에 의하여 플라즈마는 발생 가능한 상기 감압 챔버 내에 정돈된 플라즈마 톨취로 이루어진 코팅막 제조장치.
  11. 제7항에 있어서, 상기 플라즈마 분사 물질 공급 수단이 와이어의 형성에 있어 플라즈마 분사 물질을 공급하는 와이어 공급 장치에 의하여 구성된 코팅막 제조장치.
  12. 플라즈마 분사 물질 및 다이아몬드 혼합층이 형성 가능하며 플라즈마 톨취가 상기 감입 챔버에 정돈되고 가스 공급 수단 및 플라즈마 분사 물질 공급이 와이어 형에서 플라즈마 분사 물질을 공급가능하고 플라즈마 분사물질의 플라즈마 분사가 처리 가능한 코팅막 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018192A 1990-10-17 1991-10-16 코팅막의 제조방법 및 제조장치 KR940002751B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2278229A JP2938552B2 (ja) 1990-10-17 1990-10-17 コーティング膜の製造方法およびコーティング膜の製造装置
JP90-278229 1990-10-17
JP2-278229 1990-10-17

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KR920008212A true KR920008212A (ko) 1992-05-27
KR940002751B1 KR940002751B1 (ko) 1994-04-02

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US (1) US5314726A (ko)
EP (1) EP0481722B1 (ko)
JP (1) JP2938552B2 (ko)
KR (1) KR940002751B1 (ko)
DE (1) DE69106834T2 (ko)

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JP2938552B2 (ja) 1999-08-23
US5314726A (en) 1994-05-24
EP0481722B1 (en) 1995-01-18
EP0481722A1 (en) 1992-04-22
KR940002751B1 (ko) 1994-04-02
JPH04157177A (ja) 1992-05-29
DE69106834D1 (de) 1995-03-02
DE69106834T2 (de) 1995-05-18

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