KR920007174A - 온도변동으로 인한 임계치 레벨의 변화를 억제하는 수단을 갖는 반도체 집적회로 - Google Patents

온도변동으로 인한 임계치 레벨의 변화를 억제하는 수단을 갖는 반도체 집적회로 Download PDF

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KR920007174A
KR920007174A KR1019910016159A KR910016159A KR920007174A KR 920007174 A KR920007174 A KR 920007174A KR 1019910016159 A KR1019910016159 A KR 1019910016159A KR 910016159 A KR910016159 A KR 910016159A KR 920007174 A KR920007174 A KR 920007174A
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power supply
transistor
supply voltage
base
semiconductor integrated
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KR1019910016159A
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KR950008792B1 (ko
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도루 엔도
요시노리 오까지마
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세끼자와 다다시
후지쓰 가부시끼가이샤
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

내용 없음.

Description

온도변동으로 인한 임계치 레벨의 변화를 억제하는 수단을 갖는 반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 종래의 반도체 집적회로의 개통도
제1b도는 CMOS 인버터를 구성하는, pMOS 트랜지스터와 nMOS 트랜지스터의 특성그래프.
제1c도는 상기 CMOS 인버터의 불리함을 나타내는 그래프.
제2도는 본 발명의 개요를 나타내는 개통도.
제3도는 제2도의 입력회로의 회로도.
제4도는 제2도에 도시된 온도보정전원의 회로도.

Claims (10)

  1. CMOS 인버터(Q1, Q2)를 갖고 입력신호를 수신하여 이 입력신호에 대해서 자체의 출력 레벨을 결정하는임계치 레벨(Vth)을 갖는 입력회로(10)와; 상기 입력회로를 통하여 입력신호를 수신하며 제1전원전압(Vcc)을수신하는 내부회로(14)를 구비한 반도체 집적회로에 있어서, 상기 입력회로에 결합돼 있고, 상기 입력회로에 공급되는 제2전원전압(Vcont)을 발생함으로써 이 제2전원전압에 의하여, 온도변동으로 인한 상기 임제치 레벨의변화를 상쇄시키는 전원수단(12)를 구비한 것을 특징으로 하는 반도체 집적회로.
  2. 제1항에 있어서, 상기 전원수단이, 상기 제1전원전압을 수신하도록 접속 가능하고 상기 제1전원전압으로부터 상기 제2전원전압을 발생하는 것이 특징인 반도체 집적회로.
  3. 제1항에 있어서, 상기 전원수단이, 온도강하에 따라 상기 임계치 레벨을 증가 시키고 온도상승에 따라 상기임계치레벨을 감소시키는 수단(12A, 12B)을 구비한 것이 특징인 반도체 집적회로.
  4. 제1항에 있어서, 상기 전원수단이; 상기 제1전원전압을 수신하는 콜렉터와 상기 제2전원전압이 얻어지는에미터 및, 베이스를 갖는 트랜지스터(T5)와; 상기 트랜지스터에 접속돼 있고, 상기 트랜지스터의 베이스에 공급되는 베이스 전압을 발생하여 이 베이스 전압이 온도변동으로 인하여 변화되도록 하는 온도 보정수단(12A)을구비한 것이 특징인 반도체 집적회로.
  5. 제4항에 있어서, 상기 온도보정수단이, 온도상승에 따라 감소되는 베이스 전압을 발생하는 수단(12A)을구비한 것이 특징인 반도체 집적회로.
  6. 제1항에 있어서, 상기 전원수단이: 상기 제1전원전압을 수신하는 콜렉터와 베이스 및 에미터를 수신하는제1트랜지스터(T2)와; 상기 제1트랜지스터의 베이스와 상기 제1전원전압보다 낮은 기준전압에 설정된 기준부사이에 접속된 제1정전류원(T1, R2)과; 상기 제1트랜지스터의 콜렉터와 베이스간에 접속된 제1저항(R1)과; 응극과 상기 제1트랜지스터의 에미터에 접속된 양극을 갖는 제1당이오드(D2)와; 상기 제1다이오드의 음극에 접속된 베이스와, 콜렉터 및 에미터를 갖는 제2트랜지스터(T3)와; 상기 제2트랜지스터의 베이스와 상기 기준부 사이에 접속된 저항(R3)과: 상기 제1전원전압을 수신하는 콜렉터와, 상기 제2트랜지스터의 콜렉터에 접속된 베이스및, 상기 제2전원전압이 얻어지는 에미터를 갖는 제3트랜지스터(TT5)와; 상기 제3트랜지스터의 콜렉터와 베이스간에 접속된 제3저항(R7)과; 상기 제3트랜지스터의 베이스와 상기 기준부 사이에 접속된 제2정전류원(T4, T5)및; 상기 제3트랜지스터의 에미터와 상기 기준부 상이에 접속된 제3정전류원(T6, R6)을 구비한 것이 특징인 반도체 집적회로.
  7. 제1항에 있어서, 상기 전원수단이, 상기 제1다이오드의 음극에 접속된 양극과, 상기 제1트랜지스터의 베이스에 접속된 음극을 갖고 있는 것이 특징인 반도체 집적회로.
  8. 제7항에 있어서, 상기 제1, 제2, 제3정전류원의 각각의 단자가, 공통 제어전압(Vs)을 수신하며, 이 제어전압이 상기 제1, 제2 및 제3정전류원의 의해 각각 발생되는 정전류량을 결정하는 것이 특징인 반도체 집적회로.
  9. 제1항에 있어서, 상기 내부회로로부터의 신호를 증폭하는 출력회로(16)를 더 구하며 이 출력회로가 상기제1전원전압을 수신하는 것이 특징인 반도체 집적회로.
  10. 제1항에 있어서, 상기 제2전원전압(Vcont)이 상기 제2전원전압(Vcc)보다 낮은 것이 특징인 반도체 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910016159A 1990-09-17 1991-09-17 온도변동으로 인한 임계치 레벨의 변화를 억제하는 수단을 갖는 반도체 집적회로 KR950008792B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-246841 1990-09-17
JP2246841A JPH04126410A (ja) 1990-09-17 1990-09-17 半導体装置

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KR920007174A true KR920007174A (ko) 1992-04-28
KR950008792B1 KR950008792B1 (ko) 1995-08-08

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EP (1) EP0477088B1 (ko)
JP (1) JPH04126410A (ko)
KR (1) KR950008792B1 (ko)
DE (1) DE69124045T2 (ko)

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Publication number Priority date Publication date Assignee Title
US6460787B1 (en) 1998-10-22 2002-10-08 Nordson Corporation Modular fluid spray gun
KR100744131B1 (ko) 2006-02-21 2007-08-01 삼성전자주식회사 냉온에서 동작 속도가 향상되는 메모리 집적회로 장치
US7812661B2 (en) * 2007-09-24 2010-10-12 Mediatek Inc. Electronic system capable of compensating process, voltage and temperature effects

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Publication number Priority date Publication date Assignee Title
JPS5943631A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd レベル変換入力回路
US4656375A (en) * 1985-12-16 1987-04-07 Ncr Corporation Temperature compensated CMOS to ECL translator
US4763021A (en) * 1987-07-06 1988-08-09 Unisys Corporation CMOS input buffer receiver circuit with ultra stable switchpoint
JPH01256220A (ja) * 1988-04-05 1989-10-12 Nec Corp 入力回路
US4902915A (en) * 1988-05-25 1990-02-20 Texas Instruments Incorporated BICMOS TTL input buffer

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EP0477088A2 (en) 1992-03-25
DE69124045D1 (de) 1997-02-20
KR950008792B1 (ko) 1995-08-08
JPH04126410A (ja) 1992-04-27
DE69124045T2 (de) 1997-04-17
EP0477088B1 (en) 1997-01-08
EP0477088A3 (en) 1992-07-01

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