KR920001640A - 변조방식을 이용한 플라즈마 발생장치 및 방법 - Google Patents

변조방식을 이용한 플라즈마 발생장치 및 방법 Download PDF

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Publication number
KR920001640A
KR920001640A KR1019900008939A KR900008939A KR920001640A KR 920001640 A KR920001640 A KR 920001640A KR 1019900008939 A KR1019900008939 A KR 1019900008939A KR 900008939 A KR900008939 A KR 900008939A KR 920001640 A KR920001640 A KR 920001640A
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KR
South Korea
Prior art keywords
voltage
modulation
synthesizer
signal generator
generator
Prior art date
Application number
KR1019900008939A
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English (en)
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KR930004713B1 (ko
Inventor
안태혁
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900008939A priority Critical patent/KR930004713B1/ko
Priority to JP2201077A priority patent/JPH0783016B2/ja
Priority to US07/560,756 priority patent/US5087857A/en
Priority to DE4027341A priority patent/DE4027341A1/de
Priority to GB9022039A priority patent/GB2245416B/en
Priority to TW079109533A priority patent/TW198764B/zh
Publication of KR920001640A publication Critical patent/KR920001640A/ko
Application granted granted Critical
Publication of KR930004713B1 publication Critical patent/KR930004713B1/ko
Priority to HK89997A priority patent/HK89997A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

변조방식을 이용한 플라즈마 발생장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3도는 본 발명을 달성하기 위한 마그네틱코일 전류발생장치의 블록도.
제 4(a)도 내지 제 4(d)도는 제 3도의 신호발생기에서 만들어내는 전압파형을 나타낸 도면.
제 5(a) 내지 제5(d)도는 제 3도의 전류발생장치에 의해 만들어진 변조된 전류파형을 나타낸 도면.

Claims (6)

  1. 마그네틱코일과, 신호발생기와, 고정전류방식에서 가변전류로 변경하기 위해 변조용 신호발생기의 출력전압과 기준전압을 합성하여 변조된 전압파형을 만드는 전압형성기와, 상기 전압합성기의 출력전압을 전압에 의해 가변하는 전류 전원장치로 구성되고, 전압합성기를 이용하여 기준전압과 변조용 신호발생기의 전압을 변조시켜 전압에 의해 가변되는 전류전원장치에 입력시킴으로써 자장용 코일의 전류를 변조시켜서 플라즈마 균일성을 증가시키는 것을 특징으로 하는 방법.
  2. 제 1항에 있어서, 변조용 신호발생기의 듀티사이클이 0.1 내지 0.9가 되고 주파수는 1/10 내지 10㎐이 되는 것을 특징으로 하는 방법.
  3. 제 1항에 있어서, t₁과 t₂의 듀티사이클과 주파수 T를 적절히 설정할 경우 이온밀도가 평균화되어 웨이퍼 전체 직경에 대하여 비교적 평평한 이온밀도분포를 가지는 것을 특징으로 하는 방법.
  4. 제 1항에 있어서, 변조전류 발생장치를 1개 이상 사용하여 두 코일에 의한 플라즈마 이온밀도분포의 합성이 평탄화 되도록 하는 것을 특징으로하는 방법.
  5. 제 1항에 있어서, 변조용 신호발생기의 출력파형이 구형파, 톱니파, 나사산파, 싸인파 등을 사용하는 것을 특징으로 하는 방법.
  6. 마그테닉코일과, 여러개의 출력파형을 사용하는 신호발생기와, 고정전류방식에서 가변전류로 변경하기 위해 변조용 신호 발생기의 출력전압과 기준전압을 합성하여 변조된 전압파형을 만드는 전압합성기와, 상기 전압합성기의 출력전압을 전압에 의해 가변하는 전류 전원장치로 구성된 것을 특징으로 하는 플라즈마 발생장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900008939A 1990-06-18 1990-06-18 변조방식을 이용한 플라즈마 발생장치 및 방법 KR930004713B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019900008939A KR930004713B1 (ko) 1990-06-18 1990-06-18 변조방식을 이용한 플라즈마 발생장치 및 방법
JP2201077A JPH0783016B2 (ja) 1990-06-18 1990-07-27 変調方式を用いるプラズマ発生装置及び方法
US07/560,756 US5087857A (en) 1990-06-18 1990-07-31 Plasma generating apparatus and method using modulation system
DE4027341A DE4027341A1 (de) 1990-06-18 1990-08-29 Vorrichtung und verfahren zum erzeugen eines plasmas
GB9022039A GB2245416B (en) 1990-06-18 1990-10-10 A magnetic field generating apparatus and a plasma generating apparatus for use therewith
TW079109533A TW198764B (ko) 1990-06-18 1990-11-13
HK89997A HK89997A (en) 1990-06-18 1997-06-26 A magnetic field generating apparatus and a plasma generating apparatus for use therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008939A KR930004713B1 (ko) 1990-06-18 1990-06-18 변조방식을 이용한 플라즈마 발생장치 및 방법

Publications (2)

Publication Number Publication Date
KR920001640A true KR920001640A (ko) 1992-01-30
KR930004713B1 KR930004713B1 (ko) 1993-06-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008939A KR930004713B1 (ko) 1990-06-18 1990-06-18 변조방식을 이용한 플라즈마 발생장치 및 방법

Country Status (7)

Country Link
US (1) US5087857A (ko)
JP (1) JPH0783016B2 (ko)
KR (1) KR930004713B1 (ko)
DE (1) DE4027341A1 (ko)
GB (1) GB2245416B (ko)
HK (1) HK89997A (ko)
TW (1) TW198764B (ko)

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JP2584389B2 (ja) * 1992-06-10 1997-02-26 栄電子工業 株式会社 Ｅｃｒプラズマエッチング加工方法
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KR100327346B1 (ko) 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
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Also Published As

Publication number Publication date
TW198764B (ko) 1993-01-21
KR930004713B1 (ko) 1993-06-03
GB9022039D0 (en) 1990-11-21
DE4027341A1 (de) 1991-12-19
GB2245416B (en) 1994-11-16
US5087857A (en) 1992-02-11
JPH0783016B2 (ja) 1995-09-06
JPH0448726A (ja) 1992-02-18
GB2245416A (en) 1992-01-02
HK89997A (en) 1997-08-01

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