KR910008835A - 바이폴라형 반도체장치 - Google Patents
바이폴라형 반도체장치 Download PDFInfo
- Publication number
- KR910008835A KR910008835A KR1019900017526A KR900017526A KR910008835A KR 910008835 A KR910008835 A KR 910008835A KR 1019900017526 A KR1019900017526 A KR 1019900017526A KR 900017526 A KR900017526 A KR 900017526A KR 910008835 A KR910008835 A KR 910008835A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- wiring
- layers
- semiconductor substrate
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 239000010410 layer Substances 0.000 claims 11
- 239000011229 interlayer Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (1)
- 제 1 도전형을 나타내는 반도체기판(11)과, 상기 반도체기판(11)에 제 2도전형의 불순물을 도입·확산하여 형성하는 능동영역 및 수동영역의 한쪽 혹은 양쪽과, 상기 반도체기판(11) 표면에 피착되는 절연물층(10), 상기 절연물층(10)에 겹쳐지게 형성되는 배선층(12), 이 배선층(12)을 덮으면서 형성되는 단일 또는 복수의 층간절연물층(13,16) 및, 상기 층간절연물층(13,16)을 덮으면서 설치되는 다른 배선층(15,18)을 구비하되, 상기 절연물층(10) 및 배선층(12)으로부터 상층의 층간절연물층(13,16) 및 다른 배선층(15,18)의 한쪽 또는 양쪽으로 갈수록 여유를 갖도록 적층하는 것을 특징으로 하는 바이폴라형 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1283942A JP2515408B2 (ja) | 1989-10-31 | 1989-10-31 | バイポ−ラ型半導体装置 |
JP1-283942 | 1989-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008835A true KR910008835A (ko) | 1991-05-31 |
KR940002757B1 KR940002757B1 (ko) | 1994-04-02 |
Family
ID=17672217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900017526A KR940002757B1 (ko) | 1989-10-31 | 1990-10-31 | 바이폴라형 반도체장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5103287A (ko) |
EP (1) | EP0426151B1 (ko) |
JP (1) | JP2515408B2 (ko) |
KR (1) | KR940002757B1 (ko) |
DE (1) | DE69027508T2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2555964B2 (ja) * | 1993-12-10 | 1996-11-20 | 日本電気株式会社 | アライメント精度調査パターン |
US5596226A (en) * | 1994-09-06 | 1997-01-21 | International Business Machines Corporation | Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module |
US6255226B1 (en) * | 1998-12-01 | 2001-07-03 | Philips Semiconductor, Inc. | Optimized metal etch process to enable the use of aluminum plugs |
TW200603287A (en) * | 2004-03-26 | 2006-01-16 | Ulvac Inc | Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith |
JP2006339343A (ja) | 2005-06-01 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4656732A (en) * | 1984-09-26 | 1987-04-14 | Texas Instruments Incorporated | Integrated circuit fabrication process |
US4676867A (en) * | 1986-06-06 | 1987-06-30 | Rockwell International Corporation | Planarization process for double metal MOS using spin-on glass as a sacrificial layer |
JPH02100341A (ja) * | 1988-10-06 | 1990-04-12 | Toshiba Corp | 半導体装置のパターン形成方法 |
JP2508831B2 (ja) * | 1989-01-09 | 1996-06-19 | 日本電気株式会社 | 半導体装置 |
-
1989
- 1989-10-31 JP JP1283942A patent/JP2515408B2/ja not_active Expired - Fee Related
-
1990
- 1990-10-30 US US07/605,357 patent/US5103287A/en not_active Expired - Lifetime
- 1990-10-31 DE DE69027508T patent/DE69027508T2/de not_active Expired - Fee Related
- 1990-10-31 EP EP90120903A patent/EP0426151B1/en not_active Expired - Lifetime
- 1990-10-31 KR KR1019900017526A patent/KR940002757B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69027508T2 (de) | 1996-12-12 |
JPH03145734A (ja) | 1991-06-20 |
US5103287A (en) | 1992-04-07 |
DE69027508D1 (de) | 1996-07-25 |
EP0426151B1 (en) | 1996-06-19 |
EP0426151A2 (en) | 1991-05-08 |
KR940002757B1 (ko) | 1994-04-02 |
JP2515408B2 (ja) | 1996-07-10 |
EP0426151A3 (en) | 1993-08-11 |
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Payment date: 20060331 Year of fee payment: 13 |
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