KR900003919A - Nonlinear Voltage-Dependent Resistor Manufacturing Method - Google Patents

Nonlinear Voltage-Dependent Resistor Manufacturing Method Download PDF

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Publication number
KR900003919A
KR900003919A KR1019890011077A KR890011077A KR900003919A KR 900003919 A KR900003919 A KR 900003919A KR 1019890011077 A KR1019890011077 A KR 1019890011077A KR 890011077 A KR890011077 A KR 890011077A KR 900003919 A KR900003919 A KR 900003919A
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KR
South Korea
Prior art keywords
resistive material
added
dependent resistor
grain size
resistor manufacturing
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Application number
KR1019890011077A
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Korean (ko)
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KR0126468B1 (en
Inventor
헤닝즈 데트레프
하르퉁 뤼디거
레이넹 삐에
Original Assignee
에프.제이.스미트
엔.브이.필립스 글로아이람펜파브리켄
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Publication of KR900003919A publication Critical patent/KR900003919A/en
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Publication of KR0126468B1 publication Critical patent/KR0126468B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking

Abstract

내용 없음No content

Description

비선형 전압 종속 저항 제조방법Nonlinear Voltage-Dependent Resistor Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 한정된 좁은 그레인 크기 범위를 가진 발화된 그레인의 첨가물로 소결되고, 이런 첨가물없이 소결되는 소결체를 가진 바리스터의 UA값의 표준 편차의 분배 곡선도.1 is a distribution curve of the standard deviation of the UA values of a varistor having a sintered body sintered with additives of fired grains having a limited narrow grain size range and sintered without such additives.

제2도는 한정된 좁은 그레인 크기 범위를 가진 발화전 그레인의 첨가물로 소결되고, 이런 첨가물 없이 소결되는 소결제를 가진 바리스터.2 is a varistor having a sintering agent which is sintered with an additive of pre-ignition grain having a limited narrow grain size range and sintered without such an additive.

Claims (6)

분말된 저항성 물질을 변형시켜 섭씨 1200 내지 1350의 온도 범위로 공기중에서 소결시킴으로써 전극으로 소결 바디가 제공된 후 티탄, 비스무트 산화물과 저항성 물질로서 적어도 하나 이상의 전이금속을 함유한 아연 산화물의 세라믹 소결 바디를 구비한 비선형 전압 종속 저항 제조 방법에 있어서, 저항성 물질의 그레인은 섭씨 1200 내지 1400도의 온도 범위로 미리 구워지고, 4 내지 12㎛범위의 평균 그레인 크기가 1 내지 50퍼센트 무게 양만큼 분말된 저항성 물질로 첨가된 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.Sintering the powdered resistive material and sintering in air in the temperature range of 1200 to 1350 degrees Celsius to provide a sintered body to the electrode and then having a ceramic sintered body of titanium, bismuth oxide and zinc oxide containing at least one transition metal as the resistive material. In one non-linear voltage dependent resistor manufacturing method, the grain of the resistive material is prebaked to a temperature range of 1200 to 1400 degrees Celsius, and added with a resistive material powdered in an amount of 1 to 50 percent by weight with an average grain size in the range of 4 to 12 μm. Nonlinear voltage-dependent resistor manufacturing method characterized in that. 제1항에 있어서, 3내지 15퍼센트 무게 양의 그레인이 저항성물질로 첨가된 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.The method of claim 1 wherein the grain weight of 3 to 15 percent by weight is added as a resistive material. 제1항 및 2항에 있어서, 평균 그레인 크기가 6㎛인 그레인이 저항성 물질로 첨가된 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.The method of claim 1 or 2, wherein grain having a mean grain size of 6 µm is added as a resistive material. 제1항 및 2항에 있어서, 평균 그레인 크기가 4.3㎛인 그레인이 저항성 물질로 첨가된 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.The method of claim 1 or 2, wherein grain having an average grain size of 4.3 mu m is added as a resistive material. 제1항 내지 4항중 어느 한 항에 있어서, 티타늄, 안티모니, 비스무트, 망간, 코발트 및 니켈의 산화물이 첨가된 아연 산화물이 분말된 저항성 물질로 사용된 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.The method of claim 1, wherein zinc oxide added with oxides of titanium, antimony, bismuth, manganese, cobalt and nickel is used as the powdered resistive material. 제5항에 있어서, 사용된 아연 산화물은 평균 그레인 크기가 0.7 내지 1㎛범위내인 것을 특징으로 하는 비선형 전압 종속 저항 제조방법.The method of claim 5, wherein the zinc oxide used has an average grain size in the range of 0.7 to 1 μm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890011077A 1988-08-03 1989-08-03 Method for manufacturing a non-linear voltage-dependent resistor KR0126468B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE3826356A DE3826356A1 (en) 1988-08-03 1988-08-03 METHOD FOR PRODUCING A NON-LINEAR VOLTAGE-RESISTANT RESISTANCE
DE3826356.4 1988-08-03
DEP3826356.4 1988-08-03

Publications (2)

Publication Number Publication Date
KR900003919A true KR900003919A (en) 1990-03-27
KR0126468B1 KR0126468B1 (en) 1997-12-22

Family

ID=6360154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011077A KR0126468B1 (en) 1988-08-03 1989-08-03 Method for manufacturing a non-linear voltage-dependent resistor

Country Status (4)

Country Link
EP (1) EP0357113B1 (en)
JP (1) JPH0279402A (en)
KR (1) KR0126468B1 (en)
DE (2) DE3826356A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101907A (en) * 1991-03-30 1993-04-23 Toshiba Corp Breaker for electric power and resistor for electric power
KR940010133A (en) * 1992-10-20 1994-05-24 모리시타 요이찌 Manufacturing method of zinc oxide varistor
DE19509075C2 (en) * 1995-03-14 1998-07-16 Daimler Benz Ag Protective element for an electrochemical memory and method for its production
US5807510A (en) * 1995-09-07 1998-09-15 Mitsubishi Denki Kabushiki Kaisha Electric resistance element exhibiting voltage nonlinearity characteristic and method of manufacturing the same
BRPI0701878A2 (en) * 2007-07-25 2009-03-10 Univ Fed De Santa Catarina Ufsc zinc oxide varistors (zno) degradation analysis system using modified langevin model parameters

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950274A (en) * 1973-09-27 1976-04-13 General Electric Company Process for making a low voltage varistor
JPS5457699A (en) * 1977-10-18 1979-05-09 Matsushita Electric Ind Co Ltd Manufacturing method of voltage non-linear resistor
JPS60169103A (en) * 1984-02-10 1985-09-02 株式会社明電舎 Voltage nonlinear resistor

Also Published As

Publication number Publication date
EP0357113A2 (en) 1990-03-07
EP0357113B1 (en) 1994-01-12
KR0126468B1 (en) 1997-12-22
JPH0279402A (en) 1990-03-20
DE58906686D1 (en) 1994-02-24
DE3826356A1 (en) 1990-02-08
EP0357113A3 (en) 1990-03-21

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