KR890011150A - Manufacturing method of mirror surface of laser diode - Google Patents

Manufacturing method of mirror surface of laser diode Download PDF

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Publication number
KR890011150A
KR890011150A KR870013901A KR870013901A KR890011150A KR 890011150 A KR890011150 A KR 890011150A KR 870013901 A KR870013901 A KR 870013901A KR 870013901 A KR870013901 A KR 870013901A KR 890011150 A KR890011150 A KR 890011150A
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KR
South Korea
Prior art keywords
mirror surface
laser diode
chip
manufacturing
coating
Prior art date
Application number
KR870013901A
Other languages
Korean (ko)
Other versions
KR900006587B1 (en
Inventor
이종봉
이규현
이용운
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870013901A priority Critical patent/KR900006587B1/en
Publication of KR890011150A publication Critical patent/KR890011150A/en
Application granted granted Critical
Publication of KR900006587B1 publication Critical patent/KR900006587B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음No content

Description

레이저 다이오드의 거울면 제조방법Manufacturing method of mirror surface of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 4 도는 본 발명 레이저 다이오드의 거울면 제조방법도.4 is a method of manufacturing a mirror surface of the laser diode of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 레이저 다이오드 2 : 칩 어레이1: laser diode 2: chip array

3 : 발광부 4 : 스크라이브 선3: light emitting unit 4: scribe line

5 : 기판 6 : 더미 스패이서5: substrate 6: dummy spacer

Claims (1)

레이저 다이오드 칩 어레이(2)의 캐비티 길이(d1)보다 큰 두께(d2)의 더미 스페이서(6)를 기판(5)상에 수개 위치하고, 더미 스패이서(6)의 사이에 발광부(3)가 서로 마주 보도록 칩 어레이(2)를 배열한 후 원하는 두께의 앞 거울면(f)을 스퍼터링이나 화학적 기상성장법(CVD)등으로 코팅하며, 뒷 거울면(R)의 코팅을 위해 다른 기판으로 더미 스패이서(6)를 덮은후 뒤집어 뒷 거울면(R)을 코팅한 후, 칩 어레이(2)의 스크라이브 선(4)을 절단하여 칩을 완성함을 특징으로 한 레이저 다이오드의 거울면 제조방법.Several dummy spacers 6 having a thickness d 2 larger than the cavity length d 1 of the laser diode chip array 2 are positioned on the substrate 5, and the light emitting portions 3 are disposed between the dummy spacers 6. After arranging the chip arrays 2 to face each other, the front mirror surface f having a desired thickness is coated by sputtering or chemical vapor deposition (CVD), and another substrate for coating the rear mirror surface (R). After covering the dummy spacer (6) with the inverted coating the rear mirror surface (R), after the scribe line (4) of the chip array (2) to manufacture the mirror surface of the laser diode characterized in that the chip is completed Way. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870013901A 1987-12-07 1987-12-07 Mirrow manufacturing method of laser diode KR900006587B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870013901A KR900006587B1 (en) 1987-12-07 1987-12-07 Mirrow manufacturing method of laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870013901A KR900006587B1 (en) 1987-12-07 1987-12-07 Mirrow manufacturing method of laser diode

Publications (2)

Publication Number Publication Date
KR890011150A true KR890011150A (en) 1989-08-12
KR900006587B1 KR900006587B1 (en) 1990-09-13

Family

ID=19266682

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013901A KR900006587B1 (en) 1987-12-07 1987-12-07 Mirrow manufacturing method of laser diode

Country Status (1)

Country Link
KR (1) KR900006587B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290263B1 (en) * 1999-03-12 2001-05-15 권문구 Method for facet coating of semiconductor laser diodes
KR100421224B1 (en) * 2001-12-17 2004-03-02 삼성전기주식회사 Method of isolating semiconductor laser diode
KR100437181B1 (en) * 2002-04-29 2004-06-23 엘지전자 주식회사 Method for manufacturing semiconductor laser diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290263B1 (en) * 1999-03-12 2001-05-15 권문구 Method for facet coating of semiconductor laser diodes
KR100421224B1 (en) * 2001-12-17 2004-03-02 삼성전기주식회사 Method of isolating semiconductor laser diode
KR100437181B1 (en) * 2002-04-29 2004-06-23 엘지전자 주식회사 Method for manufacturing semiconductor laser diode

Also Published As

Publication number Publication date
KR900006587B1 (en) 1990-09-13

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