KR920008979A - Thin Film EL Edge Emitter - Google Patents

Thin Film EL Edge Emitter Download PDF

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Publication number
KR920008979A
KR920008979A KR1019900017364A KR900017364A KR920008979A KR 920008979 A KR920008979 A KR 920008979A KR 1019900017364 A KR1019900017364 A KR 1019900017364A KR 900017364 A KR900017364 A KR 900017364A KR 920008979 A KR920008979 A KR 920008979A
Authority
KR
South Korea
Prior art keywords
insulating layer
thin film
edge emitter
light emitting
layer
Prior art date
Application number
KR1019900017364A
Other languages
Korean (ko)
Inventor
정경득
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019900017364A priority Critical patent/KR920008979A/en
Publication of KR920008979A publication Critical patent/KR920008979A/en

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Abstract

내용 없음No content

Description

박막 EL에지 에미터Thin Film EL Edge Emitter

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 정면도.3 is a front view of the present invention.

Claims (2)

유리기판위에 공통전극, 제1절연층, 발광층, 제2절연층, 상부전극을 순차적으로 증착시킨 것에 있어서, 유리기판(1)위에 하부전극(2), 제1절연층(3), 제1발광층(4), 제2절연층(5), 공통전극(6), 제3절연층(7), 제2발광층(8), 제4절연층(9), 상부전극(10)을 각각 순차적으로 적층하여 구성함을 특징으로 하는 박막 EL에지 에미터.In the deposition of the common electrode, the first insulating layer, the light emitting layer, the second insulating layer and the upper electrode on the glass substrate in sequence, the lower electrode 2, the first insulating layer 3, the first on the glass substrate 1 The light emitting layer 4, the second insulating layer 5, the common electrode 6, the third insulating layer 7, the second light emitting layer 8, the fourth insulating layer 9, and the upper electrode 10 are sequentially disposed. Thin film EL edge emitter, characterized in that the stacking structure. 제1항에 있어서, 상부전극(10)위와 소자의 측면에 무저항 및 무반사층으로 MgF2를 증착한 것을 특징으로 하는 박막 EL에지 에미터.The thin film EL edge emitter according to claim 1, wherein MgF 2 is deposited on the upper electrode (10) and on the side surface of the device as a resistivity-free and anti-reflective layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900017364A 1990-10-29 1990-10-29 Thin Film EL Edge Emitter KR920008979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900017364A KR920008979A (en) 1990-10-29 1990-10-29 Thin Film EL Edge Emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017364A KR920008979A (en) 1990-10-29 1990-10-29 Thin Film EL Edge Emitter

Publications (1)

Publication Number Publication Date
KR920008979A true KR920008979A (en) 1992-05-28

Family

ID=67739065

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017364A KR920008979A (en) 1990-10-29 1990-10-29 Thin Film EL Edge Emitter

Country Status (1)

Country Link
KR (1) KR920008979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030043683A (en) * 2001-11-23 2003-06-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Switching device provided with integrated test means
KR100422233B1 (en) * 2001-09-13 2004-03-11 이엘코리아 주식회사 Multicolor AC powder EL device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422233B1 (en) * 2001-09-13 2004-03-11 이엘코리아 주식회사 Multicolor AC powder EL device
KR20030043683A (en) * 2001-11-23 2003-06-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Switching device provided with integrated test means

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application