JPS6414985A - Heat sink for semiconductor light emitting element - Google Patents
Heat sink for semiconductor light emitting elementInfo
- Publication number
- JPS6414985A JPS6414985A JP62171514A JP17151487A JPS6414985A JP S6414985 A JPS6414985 A JP S6414985A JP 62171514 A JP62171514 A JP 62171514A JP 17151487 A JP17151487 A JP 17151487A JP S6414985 A JPS6414985 A JP S6414985A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- fusing material
- angstrom
- grooves
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent a fusing material layer formed on the side of a heat sink from peeling off without enhancing the risk of short-circuiting due to the swelling of the fusing material in case of mounting the heat sink by a method wherein a metallic layer comprising the same metal as that of the surface metallic layer is provided only partially on one side of the heat sink. CONSTITUTION:Dicing grooves 2a in twofold length of heat sink length and in depth of 20mum in one direction only are cut in a high resistant silicon substrate 1 and after forming metallic layers 3, 4 comprising titanium, platinum and gold respectively in thickness of 500 Angstrom , 200 Angstrom and 5000 Angstrom both on the surface and rear side by sputtering process, the other dicing grooves 2b in parallel with and the same depth as that of the former dicing grooves 2a are cut in the central parts of the grooves 2a to perform the dicing process in the pitch of heat sink width and the same depth changing the direction by 90 deg.. Next, an AuSn made fusing material layer 5 evaporated by laminating metal masks after a pattern made of a fusing material layer a size larger than a semiconductor laser pellet. Finally, the silicon substrate evaporated of AuSn made fusing material is subjected of breaking to complete the heat sink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171514A JPS6414985A (en) | 1987-07-08 | 1987-07-08 | Heat sink for semiconductor light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171514A JPS6414985A (en) | 1987-07-08 | 1987-07-08 | Heat sink for semiconductor light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6414985A true JPS6414985A (en) | 1989-01-19 |
Family
ID=15924533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62171514A Pending JPS6414985A (en) | 1987-07-08 | 1987-07-08 | Heat sink for semiconductor light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6414985A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0588406A1 (en) * | 1992-09-07 | 1994-03-23 | Koninklijke Philips Electronics N.V. | Method of manufacturing a block-shaped support body for a semiconductor component |
EP0649202A1 (en) * | 1993-10-15 | 1995-04-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor laser and method of manufacturing the same |
US5578866A (en) * | 1992-09-07 | 1996-11-26 | U.S. Philips Corporation | Method of manufacturing a block-shaped support body for a semiconductor component |
EP0949727A2 (en) * | 1998-04-08 | 1999-10-13 | Fuji Photo Film Co., Ltd. | Heat sink and method of manufacturing heat sink |
-
1987
- 1987-07-08 JP JP62171514A patent/JPS6414985A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0588406A1 (en) * | 1992-09-07 | 1994-03-23 | Koninklijke Philips Electronics N.V. | Method of manufacturing a block-shaped support body for a semiconductor component |
US5578866A (en) * | 1992-09-07 | 1996-11-26 | U.S. Philips Corporation | Method of manufacturing a block-shaped support body for a semiconductor component |
EP0649202A1 (en) * | 1993-10-15 | 1995-04-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor laser and method of manufacturing the same |
US5604761A (en) * | 1993-10-15 | 1997-02-18 | Toyota Jidosha Kabushiki Kaisha | Layered semiconductor laser having solder laminations and method of making same |
EP0949727A2 (en) * | 1998-04-08 | 1999-10-13 | Fuji Photo Film Co., Ltd. | Heat sink and method of manufacturing heat sink |
EP0949727A3 (en) * | 1998-04-08 | 2002-09-25 | Fuji Photo Film Co., Ltd. | Heat sink and method of manufacturing heat sink |
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