KR890008835A - Memory device - Google Patents

Memory device Download PDF

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Publication number
KR890008835A
KR890008835A KR1019880014199A KR880014199A KR890008835A KR 890008835 A KR890008835 A KR 890008835A KR 1019880014199 A KR1019880014199 A KR 1019880014199A KR 880014199 A KR880014199 A KR 880014199A KR 890008835 A KR890008835 A KR 890008835A
Authority
KR
South Korea
Prior art keywords
memory device
bit line
pmos transistor
low level
level
Prior art date
Application number
KR1019880014199A
Other languages
Korean (ko)
Other versions
KR0168831B1 (en
Inventor
마사또시 야노
히데끼 우스끼
슌페이 고리
Original Assignee
오오가 노리오
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼 가이샤 filed Critical 오오가 노리오
Publication of KR890008835A publication Critical patent/KR890008835A/en
Application granted granted Critical
Publication of KR0168831B1 publication Critical patent/KR0168831B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

내용 없음No content

Description

메모리 장치Memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명 메모리 장치의 한 예를 나타내는 요부 회로도.1 is a main circuit diagram showing an example of the memory device of the present invention.

제2도는 그 동작을 설명하기 위한 파형도.2 is a waveform diagram for explaining the operation thereof.

Claims (1)

메모리 셀이 적어도 2개의 NMOS 트랜지스터로 형성되고 비트선과 그 비트선을 종단하는 부하를 포함하여 그 부하가 가변 저항으로 형성된 메모리 장치에 있어서, 상기 가변 저항은 PMOS 트랜지스터로 형성되고 그 PMOS 트랜지스터 게이트 전위가 데이타의 독출시에는 저레벨로, 데이타 기입시에는 저 레벨과 고 레벨간의 중간 레벨로, 각각 제어되는 것을 특징으로 하는 메모리 장치.A memory device in which a memory cell is formed of at least two NMOS transistors, the load including a bit line and a load terminating the bit line, wherein the variable resistor is formed of a PMOS transistor, and the PMOS transistor gate potential thereof is increased. And a low level when reading data, and an intermediate level between a low level and a high level when data is written. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880014199A 1987-11-27 1988-10-31 Memory device KR0168831B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62299084A JPH01140491A (en) 1987-11-27 1987-11-27 Storage device
JP299084 1987-11-27

Publications (2)

Publication Number Publication Date
KR890008835A true KR890008835A (en) 1989-07-12
KR0168831B1 KR0168831B1 (en) 1999-02-01

Family

ID=17867971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014199A KR0168831B1 (en) 1987-11-27 1988-10-31 Memory device

Country Status (2)

Country Link
JP (1) JPH01140491A (en)
KR (1) KR0168831B1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750554B2 (en) * 1985-09-06 1995-05-31 株式会社東芝 Static type memory
JPS61227288A (en) * 1985-03-30 1986-10-09 Toshiba Corp Semiconductor memory device
JPH0823995B2 (en) * 1985-12-20 1996-03-06 日本電気株式会社 Semiconductor memory device
JPS62200595A (en) * 1986-02-26 1987-09-04 Sony Corp Memory device

Also Published As

Publication number Publication date
JPH01140491A (en) 1989-06-01
KR0168831B1 (en) 1999-02-01

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